Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: A method of treating zinc sulfide transmissive bodies includes using the same metal layer to treat multiple transmissive bodies, catalyzing the recrystallization of the bodies to remove defects from the bodies and forming multispectral zinc sulfide. The metal layer is brought into contact with one of the transmissive bodies. The transmissive body and the metal layer are then subjected to elevated temperature and pressure. The metal layer may include any of a variety of suitable metals, such as platinum, cobalt, silver, nickel, and/or copper. The metal layer may be a foil that is wrapped around the transmissive body. Alternatively the metal layer may be a rigid metal piece, for example being machined to fit the shape of the transmissive bodies. The reuse of the metal layer to treat multiple transmissive bodies reduces the cost of treating the transmissive bodies.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. In another aspect, a device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer.

Abstract: In one aspect, a method includes fabricating a gallium nitride (GaN) layer with a first diamond layer having a first thermal conductivity and a second diamond layer having a second thermal conductivity greater than the first thermal conductivity. The fabricating includes using a microwave plasma chemical vapor deposition (CVD) process to deposit the second diamond layer onto the first diamond layer.

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: Durable antireflective multispectral infrared coatings comprising at least one layer of a metal oxyfluoride are provided.

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1?x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: A method of treating zinc sulfide transmissive bodies includes using the same metal layer to treat multiple transmissive bodies, catalyzing the recrystallization of the bodies to remove defects from the bodies and forming multispectral zinc sulfide. The metal layer is brought into contact with one of the transmissive bodies. The transmissive body and the metal layer are then subjected to elevated temperature and pressure. The metal layer may include any of a variety of suitable metals, such as platinum, cobalt, silver, nickel, and/or copper. The metal layer may be a foil that is wrapped around the transmissive body. Alternatively the metal layer may be a rigid metal piece, for example being machined to fit the shape of the transmissive bodies. The reuse of the metal layer to treat multiple transmissive bodies reduces the cost of treating the transmissive bodies.

Abstract: A method of treating a transmissive body of zinc sulfide or zinc selenide includes placing a non-platinum metal layer, such as a layer of cobalt, silver, or iron on a surface of the transmissive body, and improving the optical properties of the transmissive body by subjecting the body and the layer to an elevated temperature and elevated pressure. The zinc sulfide or zinc selenide may be chemical vapor deposited material. The non-platinum metal of the layer may be such that a Gibbs free energy of formation of a most stable sulfide (or selenide) of the non-platinum metal is more negative than a Gibbs free energy of formation of a most stable zinc sulfide (or zinc selenide) configuration that is thermodynamically capable of reacting with the non-platinum metal. With this condition the non-platinum metal preferentially chemically bonds with free sulfur (or free selenium) in preference to zinc sulfide (or zinc selenium).

Abstract: A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.

Abstract: Triisopropylindium ((CH.sub.3).sub.2 CH).sub.3 In is used as an n-type dopant for II/VI semiconductor materials. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations in the range of the low 10.sup.15 cm.sup.-3 and does not exhibit an appreciable memory effect.

Abstract: Triisopropylindium diisopropyltelluride adduct, ((CH.sub.3).sub.2 CH).sub.3 In:Te(CH(CH.sub.3).sub.2).sub.2 is synthesized and is used as a universal n-type dopant for both II/VI semiconductor materials as well as III/V semiconductor materials is disclosed. This dopant precursor is particularly suited for indium doping of II/V semiconductor materials at low carrier concentrations down to 10.sup.14 cm.sup.-3 and does not exhibit an appreciable memory effect.

Abstract: A method for growing a Group II-VI epitaxial layer on a substrate is described. The method includes the steps of directing a plurality of vapor flows toward the substrate including a Group II metalorganic vapor, a Group VI organic vapor, with said Group VI organic having an organic group bonded to the Group VI element selected from the group consisting of a secondary alkyl, a tertiary alkyl, an allyl, a cycloallyl, and a benzyl, and a Group II elemental metal vapor. The directed flows of Group II metalorganic vapor, Group VI organic vapor and Group II metal vapor are chemically reacted to provide the epitaxial layer.

Abstract: A method for fabricating a magnetic memory film is disclosed wherein an epitaxial layer of magnetizable material is grown on the surface of a substrate which has been selectively implanted to damage portions of the crystalline surface. The resulting polycrystalline portion of the epitaxial layer grown on the damaged substrate surface is then selectively removed to leave the monocrystalline portions of the epitaxial layer.