Abstract: The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, 1

Abstract: The present invention relates to a photoresist composition comprising a photoacid generator and at least one novel polymer comprising at least one unit as described by structure 1, 1

Abstract: The present invention relates to a photoresist composition sensitive in the deep ultraviolet region and a method of processing the photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.

Abstract: The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

Abstract: The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

Abstract: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators.

Abstract: The present invention relates to a novel photoresist that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist.

Abstract: The present invention relates to novel negative-working, photoimageable, and aqueous developable antireflective coating compositions and their use in image processing by forming a thin layer of the novel antireflective coating composition between a reflective substrate and a photoresist coating. The negative bottom photoimageable antireflective coating composition is capable of being developed in an alkaline developer and is coated below a negative photoresist.

Abstract: The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.

Abstract: The present invention relates to a novel absorbing, photoimageable and aqueous developable positive-working antireflective coating composition comprising a photoacid generator and a polymer comprising at least one unit with an acid labile group and at least one unit with an absorbing chromophore. The invention further relates to a process for using such a composition. The present invention also relates to a novel absorbing, photoimageable and aqueous alkali developable positive-working antireflective coating composition comprising a polymer comprising at least one unit with an acid labile group, a dye and a photoacid generator. The invention further relates to a process for using such a composition. The invention also relates to a novel process for forming a positive image with a positive photoresist and a novel photoimageable and aqueous developable positive-working antireflective coating composition, where the antireflective coating comprises a polymer comprising an acid labile group.

Abstract: A chemically-amplified, negative-acting, radiation-sensitive photoresist composition that is developable in an alkaline medium, the photoresist comprising: a) a phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator that forms an acid upon exposure to radiation, in an amount sufficient to initiate crosslinking of the film-forming binder resin; c) a crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises an etherified aminoplast polymer or oligomer; d) a second crosslinking agent that forms a carbonium ion upon exposure to the acid from step b) generated by exposure to radiation, and which comprises either 1) a hydroxy substituted- or 2) a hydroxy C1-C4 alkyl substituted-C1-C12 alkyl phenol, wherein the total amount of the crosslinking agents from steps c) and d) is an effective crosslinking amount; and e) a photoresist solvent, and a process for producing a microelectro

Abstract: The present invention relates to a photoresist composition sensitive to radiation in the deep ultraviolet, particularly a positive working photoresist sensitive in the range of 100-200 nanometers(nm). The photoresist composition comprises a) a polymer that is insoluble in an aqueous alkaline solution and comprises at least one acid labile group, and furthermore where the polymer is essentially non-phenolic, b) a compound capable of producing an acid upon radiation, and c) an additive that reduces the effect of electrons and ions on the photoresist image.

Abstract: The invention relates to a novel negative, aqueous photoresist composition comprising a polyvinylacetal polymer, a water-soluble photoactive compound and a crosslinking agent. The water-soluble photoactive compound is preferably a sulfonium salt. The invention also relates to forming a negative image from the novel photoresist composition.

Abstract: The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

Abstract: The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region and a method of processing the novel photoresist, where the photoresist comprises a novel copolymer, a photoactive component, and a solvent. The novel copolymer comprises a unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and a unit derived from an unsaturated cyclic non aromatic compound.

Abstract: The present invention relates to a novel polymer comprising at least one unit derived from an ethylenically unsaturated compound containing at least one cyano functionality and at least one nonaromatic cyclic unit. The novel polymer is particularly useful when used in a photoresist composition sensitive in the deep ultraviolet region.

Abstract: The present invention relates to a chemically amplified system, which is, sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a polymer that is insoluble an aqueous alkaline solution and comprises at least one acid labile group, b) a compound capable of producing an acid upon radiation. The present invention comprises a polymer that is made from a alicyclic hydrocarbon olefin, an acrylate with a pendant cyclic moeity, and a cyclic anhydride. The present invention also relates to a process for imaging such a photoresist.

Abstract: The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

Abstract: The present invention relates to a novel photoresist composition sensitive in the deep ultraviolet region, where the photoresist performance is not adversely impacted by basic contaminants in the processing environment of the photoresist. The novel photoresist comprises a polymer, a photoactive compound, a basic compound that is a sulfonium or iodonium compound that is essentially nonabsorbing at the exposure wavelength of the photoresist, and a solvent composition. The invention further relates to a process for imaging such a photoresist in the deep ultraviolet region.

Abstract: The invention consists of a light absorbing top antireflective layer that reduces the swing curve amplitude for photoresist materials used in the semiconductor industry. The coating may be water based but is not necessarily so. The advantage of a water-based coating is its ease of use, since it can be applied without intermixing to the softbaked photoresist, and is removed in the development step, so that process complexity is only minimally increased. One problem that has been associated with the existing non-absorbing antireflective coatings is that the optimum swing curve reduction is only achieved at a very low refractive index. The advantages of a dyed coating are a) that the refractive index of the top coat can additionally be lowered by making use of anomalous dispersion effects if the dye is chosen judiciously, and b) that it is possible to achieve the optimum swing curve reduction at a higher refractive index of the top coat.