Abstract: A sense amplifier for reading memory cells in a SRAM, the sense amplifier comprising two gate-biased pMOSFETs, each corresponding to a selected bitline. The gates of the two gate-biased pMOSFETs have their gates biased to a bias voltage, their sources coupled to the selected bitlines via column-select transistors, and their drains coupled via pass transistors to the two ports of two cross-coupled inverters, the cross-coupled inverters forming a latch. After a selected bitline pair has been pre-charged and the pre-charge phase ends, one of the two gate-biased pMOSFETs quickly goes into its subthreshold region as one of the bitlines discharges through its corresponding memory cell, thereby cutting off the bitline's capacitance from the sense amplifier. When the pass transistors are enabled, the other of the two pMOSFETs allows a significant bitline charge to transfer via its corresponding pass transistor to its corresponding port, whereas a relatively much smaller charge is transferred to the other port.

Abstract: A dual-rail static logic gate with a self cut-off mechanism is disclosed. In an embodiment, the output of the first rail is coupled to the input of the pull-up device of the second rail and vice versa. The cross-coupling allows the self cut-off mechanism of the static gate to function properly and provides for components which have lower capacitance than conventional static gates. The lower capacitance results in a faster static gate.

Abstract: An eight-cell for static random access memory, the memory cell comprising cross-coupled inverters to store the information bit, two access nMOSFETs connected to local bit lines to access the stored information bit, and two nMOSFETs each having a gate connected to ground and coupled to the local bit lines and the cross-coupled inverters so that sub-threshold leakage currents to and from the local bit lines for a memory cell not being read are balanced.

Abstract: An eight-cell memory cell for static random access memory, the memory cell comprising cross-coupled inverters to store the information bit, two access nMOSFETs connected to local bit lines to access the stored information bit, and two nMOSFETs each having a gate connected to ground and coupled to the local bit lines and the cross-coupled inverters so that sub-threshold leakage currents to and from the local bit lines for a memory cell not being read are balanced.

Abstract: A clock receiver circuit converts low amplitude, differential clock signal components received from a differential clock distribution medium into a full swing digital clock. The clock receiver circuit can be used as part of, for example, an on-die salphasic clock distribution system within a microelectronic device.

Abstract: A dual-rail static logic gate with a self cut-off mechanism is disclosed. In an embodiment, the output of the first rail is coupled to the input of the pull-up device of the second rail and vice versa. The cross-coupling allows the self cut-off mechanism of the static gate to function properly and provides for components which have lower capacitance than conventional static gates. The lower capacitance results in a faster static gate.

Abstract: A method for controlling a local clock includes receiving a reference clock and generating a phase-shifted version of the reference clock. The two clocks are synchronized using a closed-loop method that produces a control signal. The control signal is smoothed during the closed-loop method and the smoothed signal is then used, instead of the control signal, in generating the phase-shifted clock.

Abstract: A method for controlling a local clock includes receiving a reference clock and generating a phase-shifted version of the reference clock. The two clocks are synchronized using a closed-loop method that produces a control signal. The control signal is smoothed during the closed-loop method and the smoothed signal is then used, instead of the control signal, in generating the phase-shifted clock.

Abstract: An embodiment of a full-swing, source-follower leakage tolerant dynamic logic gate comprises an nMOSFET logic to conditionally charge a node during an evaluation phase, and to charge the node to a relatively small voltage during the pre-charge phase so that the nMOSFET logic becomes reverse-biased.

Abstract: In some embodiments, the invention includes an interconnect system having a single ended driver and a single ended hysteretic receiver. A single ended interconnect is coupled between the single ended driver and single ended receiver. In other embodiments, the invention involves an interconnect system including interconnects, single ended drivers, and single ended hysteretic receivers connected to respective ones of the interconnects. The single ended drivers receive respective data-in signals and an enable signal and wherein the drivers transmit interconnect signals on the interconnects when the enable signal is asserted. In yet other embodiments, the invention includes an interconnect system having interconnects, quasi-static drivers and receivers connected to respective ones of the interconnects.

Abstract: A clock receiver circuit converts low amplitude, differential clock signal components received from a differential clock distribution medium into a full swing digital clock. The clock receiver circuit can be used as part of, for example, an on-die salphasic clock distribution system within a microelectronic device.

Abstract: Embodiments of the present invention relate to memory circuits with heavily loaded bit-lines, and where either the effect of leakage current in the read access or pass transistors is reduced, or leakage current is reduced.

Abstract: The invention involves a die having domino circuits. In some embodiments, at least some of the domino circuits include an output stage and a domino stage including a domino stage output node coupled to the output stage. The domino stage includes a wide-fanin evaluate network including the domino stage output node and at least one intermediate node. The domino stage has improved noise immunity and reduced leakage through reverse body biasing transistors in the evaluate network by raising voltage of the at least one intermediate node without static power consumption through the evaluate network. In other embodiments, at least some of the domino circuits include an output stage and a domino stage including a domino stage output node coupled to the output stage. The domino stage includes a wide-fanin evaluate network including the domino stage output node and wherein the domino stage further includes a diode transistor having a gate and an additional terminal connected to the domino stage output node.

Abstract: Embodiments of the present invention relate to memory circuits with heavily loaded bit-lines, and where either the effect of leakage current in the read access or pass transistors is reduced, or leakage current is reduced.

Abstract: A dual-supply voltage latch includes a data input node to receive an input data, internal nodes to hold the input data, and an output node to output an output data. The latch also includes clock input nodes to receive a clock signal. The data input, internal, and data output nodes are at a higher potential than the clock nodes. Since clock nodes are high activity nodes, less potential on these nodes reduces the energy consumed by the latch. Although the data nodes and clock nodes are at different potentials, the latch has reduced static power dissipation.

Abstract: A voltage-level converter and a method of converting a first logic voltage level to a second logic voltage level are described. In one embodiment, a voltage-level converter connects a first logic unit connected to a first supply voltage to a second logic unit connected to a second supply voltage. The voltage-level converter includes at least one transistor connected to the second supply voltage. The at least one transistor has a threshold voltage whose absolute value is greater-than-or-about-equal to the absolute value of the difference between the second supply voltage and the first supply voltage.

Abstract: A digital adder circuit is implemented using a Kogge-Stone architecture. Various embodiments utilize single-ended domino circuits, to which are input single-ended primary addends. Dual-function generator circuits generate differential sum and sum-complement output signals. The use of low VT devices and full CMOS circuitry provides a relatively high degree of noise immunity. Also described are a microprocessor having an ALU incorporating one or more of the adder circuits, as well as a method of adding two numbers which generates differential sum and sum-complement outputs but does not use full-differential domino circuits, thus providing considerable savings in circuit area, circuit conductors, and layout complexity.

Abstract: A level converting latch, using dual-supply voltage signals and operating with reduced charge contention, converts an input signal having a first and a second potential level into an output signal also having a first and a second potential level. The first potential level of the input and output signals are the same. The second potential level of the input and output signals are unequal.

Abstract: A dual-rail static logic gate with a self cut-off mechanism is disclosed. In an embodiment, the output of the first rail is coupled to the input of the pull-up device of the second rail and vice versa. The cross-coupling allows the self cut-off mechanism of the static gate to function properly and provides for components which have lower capacitance than conventional static gates. The lower capacitance results in a faster static gate.

Abstract: A circuit including a clock signal input to receive a clock signal, at least one data signal input to receive at least one data signal, and a multiple input conditional inverter to receive the clock signal and the data signal, and to generate a dynamic output. The circuit also includes a conditional keeper circuit to charge a dynamic output node when the clock is evaluating and the dynamic output is high.