Patents by Inventor Raman Vaidyanathan
Raman Vaidyanathan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9647151Abstract: The invention relates to manufacturing a I-III-VI compound in the form of a thin film for use in photovoltaics, including the steps of: a) electrodepositing a thin-film structure, consisting of I and/or III elements, onto the surface of an electrode that forms a substrate (SUB); and b) incorporating at least one VI element into the structure so as to obtain the I-III-VI compound. According to the invention, the electrodeposition step comprises checking that the uniformity of the thickness of the thin film varies by no more than 3% over the entire surface of the substrate receiving the deposition.Type: GrantFiled: October 10, 2011Date of Patent: May 9, 2017Assignee: NEXCISInventors: Pierre-Philippe Grand, Salvador Jaime, Philippe De Gasquet, Hariklia Deligianni, Lubomyr T. Romankiw, Raman Vaidyanathan, Qiang Huang, Shafaat Ahmed
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Patent number: 9450136Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: GrantFiled: April 29, 2015Date of Patent: September 20, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Patent number: 9447514Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: GrantFiled: April 29, 2015Date of Patent: September 20, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Patent number: 9401443Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.Type: GrantFiled: September 5, 2012Date of Patent: July 26, 2016Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Kathleen B. Reuter, Lubomyr T. Romankiw, Raman Vaidyanathan
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Publication number: 20160155889Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.Type: ApplicationFiled: February 8, 2016Publication date: June 2, 2016Inventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Raman Vaidyanathan
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Patent number: 9293632Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.Type: GrantFiled: September 18, 2013Date of Patent: March 22, 2016Assignee: GLOBALFOUNDRIES INC.Inventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Raman Vaidyanathan
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Patent number: 9219186Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: GrantFiled: April 29, 2015Date of Patent: December 22, 2015Assignee: International Business Machines CorporationInventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Patent number: 9209343Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: GrantFiled: April 29, 2015Date of Patent: December 8, 2015Assignee: International Business Machines CorporationInventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Publication number: 20150243831Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: ApplicationFiled: April 29, 2015Publication date: August 27, 2015Inventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Publication number: 20150233009Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: ApplicationFiled: April 29, 2015Publication date: August 20, 2015Inventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Publication number: 20150236189Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: ApplicationFiled: April 29, 2015Publication date: August 20, 2015Inventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Publication number: 20150236188Abstract: A structure and method of making a thin-film solar cell is provided. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: ApplicationFiled: April 29, 2015Publication date: August 20, 2015Inventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Patent number: 9085829Abstract: A structure and method of making a thin-film solar cell. A thin-film solar cell includes a substrate, absorber layer and a buffer layer. The absorber layer is deposited by a single-step bulk electrochemical process, or a multi-layer electrochemical process. The buffer layer is deposited by an electrochemical deposition process such as a multi-layer deposition or an atomic layer deposition. The absorber and buffer layers are non-toxic materials which can include sulfur incorporated during the deposition process or incorporated after deposition by an anneal step.Type: GrantFiled: August 31, 2011Date of Patent: July 21, 2015Assignee: International Business Machines CorporationInventors: Hariklia Deligianni, Lian Guo, Raman Vaidyanathan
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Publication number: 20150079723Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.Type: ApplicationFiled: September 18, 2013Publication date: March 19, 2015Applicant: International Business Machines CorporationInventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Lubomyr T. Romankiw, Raman Vaidyanathan
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Patent number: 8633633Abstract: A piezoelectric based energy supply includes a multiplicity of mechanical actuators able to be displaced through operation by an operator from a first position and a second position. A multiplicity of independent piezoelectric components is disposed below the multiplicity of actuators. Each independent piezoelectric component within the multiplicity of independent piezoelectric components is associated with at least one respective actuator in the multiplicity of actuators and is adapted to be deformed by displacement of the at least one respective actuator within the plurality of actuators from a first position and a second position. An electrical coupler electrically couples each of the multiplicity of independent piezoelectric components.Type: GrantFiled: August 9, 2012Date of Patent: January 21, 2014Assignee: International Business Machines CorporationInventor: Raman Vaidyanathan
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Publication number: 20130269780Abstract: The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.Type: ApplicationFiled: December 20, 2011Publication date: October 17, 2013Applicant: NEXCISInventors: Pierre-Philippe Grand, Jesus Salvadoe Jaime Ferrer, Emmanuel Roche, Hariklia Deligianni, Raman Vaidyanathan, Kathleen B. Reuter, Qiang Huang, Lubomyr Romankiw, Maurice Mason, Donna S. Zupanski-Nielsen
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Publication number: 20130008798Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy.Type: ApplicationFiled: September 5, 2012Publication date: January 10, 2013Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Kathleen B. Reuter, Lubomyr T. Romankiw, Raman Vaidyanathan
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Publication number: 20120299447Abstract: A piezoelectric based energy supply includes a multiplicity of mechanical actuators able to be displaced through operation by an operator from a first position and a second position. A multiplicity of independent piezoelectric components is disposed below the multiplicity of actuators. Each independent piezoelectric component within the multiplicity of independent piezoelectric components is associated with at least one respective actuator in the multiplicity of actuators and is adapted to be deformed by displacement of the at least one respective actuator within the plurality of actuators from a first position and a second position. An electrical coupler electrically couples each of the multiplicity of independent piezoelectric components.Type: ApplicationFiled: August 9, 2012Publication date: November 29, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventor: Raman VAIDYANATHAN
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Patent number: 8288923Abstract: A piezoelectric based energy supply includes a multiplicity of mechanical actuators able to be displaced through operation by an operator from a first position and a second position. A multiplicity of independent piezoelectric components is disposed below the multiplicity of actuators. Each independent piezoelectric component within the multiplicity of independent piezoelectric components is associated with at least one respective actuator in the multiplicity of actuators and is adapted to be deformed by displacement of the at least one respective actuator within the plurality of actuators from a first position and a second position. An electrical coupler electrically couples each of the multiplicity of independent piezoelectric components.Type: GrantFiled: September 10, 2009Date of Patent: October 16, 2012Assignee: International Business Machines CorporationInventor: Raman Vaidyanathan
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Publication number: 20120055612Abstract: Photovoltaic devices and methods for preparing a p-type semiconductor layer for the photovoltaic devices generally include electroplating a layer of gallium or a gallium alloy onto a conductive layer by contacting the conductive layer with a plating bath free of complexing agents including a gallium salt, methane sulfonic acid or sodium sulfate and an organic additive comprising at least one nitrogen atom and/or at least one sulfur atom, and a solvent; adjusting a pH of the solution to be less than 2.6 or greater than 12.6. The photovoltaic device includes an impurity in the p-type semiconductor layer selected from the group consisting of arsenic, antimony, bismuth, and mixtures thereof. Various photovoltaic precursor layers for forming CIS, CGS and CIGS p-type semiconductor structures can be formed by electroplating the gallium or gallium alloys in this manner. Also disclosed are processes for forming a thermal interface of gallium or a gallium alloy with the electroplating process.Type: ApplicationFiled: September 2, 2010Publication date: March 8, 2012Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shafaat Ahmed, Hariklia Deligianni, Qiang Huang, Kathleen B. Reuter, Lubomyr T. Romankiw, Raman Vaidyanathan