Abstract: Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Abstract: Methods and devices for low-temperature deposition of phosphorous-doped silicon layers. Disilane is used as a silicon precursor, and nitrogen or a noble gas is used as a carrier gas. Phosphine is a suitable phosphorous precursor.

Abstract: Methods and systems for depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, forming a first doped semiconductor layer overlying the substrate, and forming a second doped semiconductor layer overlying the first doped semiconductor layer, wherein the first doped semiconductor layer comprises a first dopant and a second dopant, and wherein the second doped semiconductor layer comprises the first dopant. Structures and devices formed using the methods and systems for performing the methods are also disclosed.

Abstract: A method for selectively forming an n-type doped material on a surface of a substrate is disclosed. A system for performing the method and structures and devices formed using the method are also disclosed.

Abstract: Methods and systems for selectively depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, comprising a first area comprising a first material and a second area comprising a second material, selectively depositing a first doped semiconductor layer overlying the first material relative to the second material and selectively depositing a second doped semiconductor layer overlying the first doped semiconductor layer relative to the second material.

Abstract: A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Abstract: Methods and systems for selectively depositing a p-type doped silicon germanium layer and structures and devices including a p-type doped silicon germanium layer are disclosed. An exemplary method includes providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber; depositing a p-type doped silicon germanium layer overlying the surface, the p-type doped silicon germanium layer comprising gallium; and depositing a cap layer overlying the p-type doped silicon germanium layer. The method can further include an etch step to remove the cap layer and the p-type doped silicon germanium layer overlying the second material.

Abstract: Methods for forming structures that include a layer comprising silicon germanium are disclosed. Exemplary embodiments of the disclosure provide improved methods of forming a transition layer on the layer comprising silicon germanium that can mitigate any formation of an interface layer between the layer comprising silicon germanium and a subsequently formed layer comprising silicon.

Abstract: A light source comprises a GeSn active zone inserted between two contact zones. The active zone is formed directly on a silicon oxide layer by a first lateral epitaxial growth of a Ge germination layer followed by a second lateral epitaxial growth of a GeSn base layer. A cavity is formed between the contact zones by encapsulation and etching, so as to guide these lateral growths. A vertical growth of GeSn is then achieved from the base layer to form a structural layer. The active zone is formed in the stack of base and structural layers.

Abstract: A method for producing a photodiode including an absorption region A made from Ge interposed between two contact regions. The absorption region A is formed directly on a layer of silicon oxide through a first lateral epitaxial growth followed by a second vertical epitaxial growth. Advantageously, a cavity is formed between the contact regions by encapsulation and etching, so as to guide the first lateral growth of Ge. This first growth forms a base layer having a reduced level of structural defects. The second growth of Ge is done next from this base layer, in order to obtain a structure layer having a greater thickness while keeping a reduced level of structural defects. The absorption region A is advantageously formed in a stack of base and structure layers, so as to obtain a GeOI lateral photodiode.

Abstract: The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.

Abstract: The subject matter of the invention is a method for producing a lateral photodiode comprising a layer surmounted by a first pattern comprising an absorption region interposed between two contact regions. After encapsulation of the first pattern, a cavity is formed between the contact regions by etching through openings, and then filled with a material constituting the absorption region by lateral epitaxy of this material from the lateral walls of the cavity. According to one possibility, a first lateral epitaxy is effected in order to form a multiplication region, and then a second lateral epitaxy is effected in order to form a charge region before the lateral epitaxy of the material constituting the absorption region, so as to obtain a lateral avalanche photodiode having improved optical confinement. The lateral photodiode according to the invention has improved optical confinement.

Abstract: The subject matter of the invention is a method for producing a lateral photodiode comprising a layer surmounted by a first pattern comprising an absorption region interposed between two contact regions. After encapsulation of the first pattern, a cavity is formed between the contact regions by etching through openings, and then filled with a material constituting the absorption region by lateral epitaxy of this material from the lateral walls of the cavity. According to one possibility, a first lateral epitaxy is effected in order to form a multiplication region, and then a second lateral epitaxy is effected in order to form a charge region before the lateral epitaxy of the material constituting the absorption region, so as to obtain a lateral avalanche photodiode having improved optical confinement. The lateral photodiode according to the invention has improved optical confinement.

Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: A process for fabricating a micromechanical structure made of silicon carbide including a cavity, from a stack including a first silicon-carbide layer and a silicon layer on the first silicon-carbide layer, the process including shaping the silicon layer so as to form a discrete silicon structure on the first silicon-carbide layer. The process further includes, after the shaping of the silicon layer, a carbonization to initiate the removal of the discrete silicon structure; depositing a second silicon-carbide layer; and an annealing step, the discrete silicon structure being entirely removed at the end of the annealing.

Abstract: The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.