Patents by Inventor Ranbir Singh

Ranbir Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5461005
    Abstract: Electrical discontinuities in a silicide formed on a patterned surface are prevented by forming metal fillets in the recesses of the patterned polysilicon covered surface, and then depositing a metal layer and reacting with silicon to form the silicide. The fillet provides extra metal at a place where there is typically a deficiency in conventional deposition techniques.
    Type: Grant
    Filed: December 27, 1991
    Date of Patent: October 24, 1995
    Assignee: AT&T IPM Corp.
    Inventors: Ajit Manocha, Sailesh M. Merchant, Ranbir Singh
  • Patent number: 5387217
    Abstract: A disposable wire driver for inserting wires into or through bones to provide support and fixation for the bone while the bone structure is mending. As unused, the wire driver is enclosed in a sterility-preserving wrapper that protects the wire driver until it is ready for use. The wire driver is disposable after a single use and is constructed largely of plastic. The wire driver includes an elongated, plastic casing having a front opening at a front end of the casing, and a back opening at a back end of the casing. A wire passageway extends through the casing from the back opening to the front opening to allow a wire to be inserted into the back opening and through the wire driver. The casing encloses a motor and a battery coupled to the motor. The battery-powered motor drives a pinion-and-gear assembly which is connected to a wire holding tube. The collet extends through the front opening of the casing and selectively grips a wire inserted into the wire driver.
    Type: Grant
    Filed: February 11, 1993
    Date of Patent: February 7, 1995
    Inventors: Frank Sefcik, Ranbir Singh
  • Patent number: 4522657
    Abstract: Disclosed is a low temperature technique for annealing implantation damage and activating dopants. Conventional furnace annealing requires temperatures as high as 1000.degree. to 1100.degree. C. to completely anneal the dopant implantation damage; 75 KeV arsenic implantation followed by 550.degree. C. for 75 minutes and 900.degree. C. for 30 minutes in nitrogen for instance is not sufficient to anneal the implantation damage and results in a leakage current of the order of 1 mA per cm.sup.2. If, however, subsequent to the arsenic implantation, 0.4 KeV hydrogen ions are implanted using a Kaufman ion source with an accelerator current of 200 milliamp, then only 500.degree. to 600.degree. C. for one hour anneal in nitrogen is sufficient to eliminate the arsenic implantation damage. This results in a leakage current of the order of 5 to 25 nA per cm.sup.2 and a complete dopant activation is achieved.
    Type: Grant
    Filed: October 20, 1983
    Date of Patent: June 11, 1985
    Assignee: Westinghouse Electric Corp.
    Inventors: Ajeet Rohatgi, Prosenjit Rai-Choudhury, Joseph R. Gigante, Ranbir Singh, Stephen J. Fonash