Abstract: A flip chip type quad flat non-leaded package, comprising: a plurality of leads each having a first surface and a second surface opposite to the first surface; a die having an active surface and a backside opposite the active surface, wherein the active surface has a plurality of bonding pads, each having a bump, and wherein each bump is connected to a first surface of one of the leads respectively; and a molding compound encapsulating the leads and the die, exposing second surfaces of the leads.

Abstract: A structure of a multi chip module package having stacked chips, having at least a substrate, a main chip, a plurality of chip sets, a plurality of spacers, a plurality of glue layers, a plurality of wires, and a mold compound. The substrate has a front surface and a back surface opposite to the front surface. A plurality of chips are stacked in the form of laminate on the front surface of the substrate to form a plurality of chip sets, which are located next to the main chip. A plurality of spacers are arranged between each two adjacent chips. The connection between the spacers, the main chip, the chips, and the substrate are achieved by a plurality of glue layers. A plurality of wires are used to electrically connect the chips and the main chip to the substrate. Finally, the front surface of the substrate, the main chip, the spacers, the chips, and the glue layers are encapsulated with a mold compound to accomplish the package.

Abstract: A method and structure for attaching a lead frame to a heat sink are provided. In one embodiment, a layer of thermally conductive, electrically insulating epoxy is formed on a heat sink and the epoxy layer is fully cured. A thermoplastic adhesive layer is formed on the epoxy layer, and the heat sink is clamped to the lead frame such that the thermoplastic layer contacts the lead frame. The thermoplastic layer is heated to its melting point and then cooled, thereby joining the heat sink and the lead frame. In a variation, a partially cured B-stage epoxy layer is used to replace the thermoplastic layer. The B-stage epoxy layer is fully cured to connect the lead frame to the heat sink.

Abstract: A semiconductor package and a method for fabricating the same are proposed, in which a lead frame is modified to form protrusions at sides of middle portions of leads to reduce spacing between the adjacent middle portions. This allows resin flow to slow down in speed during molding and reduces area available for resin flashes occurring thereon, so as to effectively eliminate the occurrence of resin flashes on the leads. Moreover, tapes can be adhered onto the lead frame for covering spacing between adjacent leads of the lead frame; this further helps prevent resin flashes from occurrence. In such an environment free of resin flashes, die-bonding and wire-bonding processes can be proceeded smoothly with assurance of quality and reliability of fabricated semiconductor packages.

Abstract: A package structure stacking chips on a front surface and a back surface of a substrate including at least a substrate, a plurality of chip sets, a plurality of support members, a plurality of glue layers, a plurality of wires, and a mold compound. The substrate has a front surface and a back surface opposite to the front surface. Each chip set has one or more chips, each chip having a plurality of bonding pads. The chip sets are stacked as a laminate on the front surface of the substrate, respectively. A plurality of support members are arranged between each two adjacent chip sets. A glue layers are used to connect the support members, the chip sets, and the substrate. The chip in the same chip sets is electrically connected to each other or to the substrate by the bonding pads. Finally, the front surface of the substrate, the support members, the chip sets, and the glue layers are encapsulated with a mold compound. Moreover, a plurality of flip chips are deposited on the back surface of the substrate.

Abstract: A flip chip type quad flat non-leaded package, comprising: a plurality of leads each having a first surface and a second surface opposite to the first surface; a die having an active surface and a backside opposite the active surface, wherein the active surface has a plurality of bonding pads, each having a bump, and wherein each bump is connected to a first surface of one of the leads respectively; and a molding compound encapsulating the leads and the die, exposing second surfaces of the leads.

Abstract: A package structure stacking chips on a front surface and a back surface of a substrate including at least a substrate, a plurality of chip sets, a plurality of support members, a plurality of glue layers, a plurality of wires, and a mold compound. The substrate has a front surface and a back surface opposite to the front surface. Each chip set has one or more chips, each chip having a plurality of bonding pads. The chip sets are stacked as a laminate on the front surface of the substrate, respectively. A plurality of support members are arranged between each two adjacent chip sets. A glue layers are used to connect the support members, the chip sets, and the substrate. The chip in the same chip sets is electrically connected to each other or to the substrate by the bonding pads. Finally, the front surface of the substrate, the support members, the chip sets, and the glue layers are encapsulated with a mold compound. Moreover, a plurality of flip chips are deposited on the back surface of the substrate.

Abstract: A method is proposed for forming solder areas over a lead frame through deposition of an oxidation layer rather than selective removal of a polyimide-made solder mask, which allows the fabrication of the lead frame to be carried out in a more cost-effective and advantageous manner. The method allows the fabrication of the lead frame to be carried out through stamping without etching. Moreover, it can make the overall integrated circuit package less easily subjected to cracking and more securely assembled. Still moreover, it can make the overall integrated circuit package less likely to be weakened in structural strength by moisture. This method is therefore more advantageous to use than the prior art.

Abstract: A Ball Grid Array (BGA) semiconductor package with exposed base layer includes a base layer having an opening portion in the center thereof and formed with a plurality of holes about the opening portion. A plurality of leads are attached to a second surface of the base layer and each of the leads is connected to a corresponding hole in the base layer. A semiconductor chip is attached and electrically connected to the leads. The semiconductor chip and the leads are covered by an encapsulant formed by an encapsulating compound, leaving a first surface of the base layer exposed. A plurality of solder balls are planted in the holes in the base layer, which are electrically bonded to the leads so as to electrically connect the semiconductor chip to external devices. In this BGA semiconductor package, the leads together with the base layer are used as a substrate for the semiconductor chip to attach thereto. Therefore, there is no need of costly BGA substrate.

Abstract: A method is proposed for forming circuit probing (CP) contact points on fine pitch peripheral bond pads (PBP) on a flip chip for the purpose of facilitating peripheral circuit probing of the internal circuitry of the flip chip. The proposed method is characterized in the forming of a dual-layer NiV/Cu metallization structure, rather than a triple-layer A1/NiV/Cu metallization structure, over each aluminum-based PBP, which includes a bottom layer of nickel-vanadium (NiV) deposited over the aluminum-based PBP and an upper layer of copper (Cu) deposited over the nickel-vanadium layer. When low-resolution photolithographic and etching equipment is used for photoresist mask definition for selective removal of the NiV/Cu metallization structure, the resulted photoresist masking can be misaligned to the PBP.

Abstract: A packaging structure comprises a substrate, a plurality of semiconductor chips contiguously mounted into a plurality of stacked semiconductor chip sets, a plurality of supporting members, a plurality of adhesive layers, a plurality of wires and a molding compound. Each of the semiconductor chip sets comprises at least a semiconductor chip, each semiconductor chip having plurality of bonding pads. The size deviation between the semiconductor chip sets is less than 0.3 mm. The supporting members separate from one another the semiconductor chip sets stacked above the substrate. The adhesive layers bond the substrate, the supporting members and the semiconductor chips to one another. The wires connect the semiconductor chips to one another and to the substrate. The molding compound encapsulates the substrate, the semiconductor chips, the supporting members, and the adhesive layers.

Abstract: A method of wire bonding for small clearance employs a conductive bump over the pad of a chip to prevent a capillary from colliding with the chip during three-dimensional package wiring process. The conventional constraint which limits the clearance to greater than 0.2 mm so as to find an appropriate capillary is overcome in this method.

Abstract: A method of wire bonding for small clearance is disclosed. The method employs a conductive bump over the pad of the chip to prevent the capillary from colliding with the chip during the three-dimensional package wiring process The conventional constraint which limits the clearance to greater than 0.2 mm so as to find the appropriate capillary is overcome in this method.

Abstract: A method of fabricating a BGA (Ball Grid Array) IC package of the type having an encapsulating body is proposed, which allows the BGA IC package to be manufactured without having to use conventional organic substrate and encapsulating-body mold having cavity, so that the manufacture process can be more cost-effective to carry out than the prior art. The proposed method is characterized in the use of a copper piece which is selectively removed to form an encapsulating-body cavity for the forming of an encapsulating body therein. The proposed method requires no use of mold with cavity for the forming of the encapsulating body, allowing the same mold to be used for the fabrication of various BGA IC packages of different sizes.

Abstract: A multi-chip module (MCM) integrated circuit package structure is proposed, which can be used to pack a plurality of semiconductor chips of different functions while nonetheless allowing the overall package size to be as small as some existing types of integrated circuit packages, such as the SO (Small Outline) and QFP (Quad Flat Package) types, so that it can be manufactured using the existing fabrication equipment. The proposed MCM integrated circuit package structure is characterized in the use of a substrate having a centrally-located opening, and at least one semiconductor chip is mounted on the front surface of the substrate and a semiconductor chip of a central-pad type having a plurality of centrally-located bonding pads is mounted on the back surface of the substrate with the centrally-located bonding pads being exposed through the opening. This arrangement allows the overall package size to be made very compact and also allows the wiring to the central-pad type semiconductor chip to be shortened.

Abstract: The present invention suggests a new scheme of integrating a heat conducting promotion apparatus (or heat sink) and a chip carrier (such as a substrate) of an IC package including a chip. It is characterized by at least a cavity which is in the chip carrier and around the chip, and the configuration of the heat conducting promotion apparatus having a first part which is close to or contacts a heat conducting surface of the chip, and a second part which extends from the first part toward the cavity until it partly contacts a surface of the chip carrier and partly is inside of the cavity. It is also characterized by options of placing at least an elastic entity in the cavity to contact the heat conducting promotion apparatus' part which is inside the cavity, or twisting the heat conducting promotion apparatus' part which is inside the cavity.

Abstract: A BGA (Ball-Grid Array) IC package with an unembedded type of heat-dissipation structure is proposed. The unembedded type of heat-dissipation structure is characterized in that a plurality of thermally-conductive vias are formed in the substrate and extending from the die-attachment area to the back side of the substrate; and further, a plurality of thermally-conductive balls are bonded to the thermally-conductive vias on the back side of the substrate. Moreover, a thermally-conductive layer is formed over a thermally-conductive area on the back side of the substrate on which the thermally-conductive balls are mounted for the purpose of increasing the exposed area of the overall heat-dissipation structure to the atmosphere. This allows the IC-produced heat during operation to be conducted through the thermally-conductive vias, the thermally-conductive balls, and the thermally-conductive layer to be dissipated the atmosphere.

Abstract: A method is proposed for forming circuit probing (CP) contact points on fine pitch peripheral bond pads (PBP) on a flip chip for the purpose of facilitating peripheral circuit probing of the internal circuitry of the flip chip. The proposed method is characterized in the forming of a dual-layer NiV/Cu metallization structure, rather than a triple-layer Al/NiV/Cu metallization structure, over each aluminum-based PBP, which includes a bottom layer of nickel-vanadium (NiV) deposited over the aluminum-based PBP and an upper layer of copper (Cu) deposited over the nickel-vanadium layer. When low-resolution photolithographic and etching equipment is used for photoresist mask definition for selective removal of the NiV/Cu metallization structure, the resulted photoresist masking can be misaligned to the PBP.

Abstract: A wafer level packaging process comprises the following steps: First of all, to bond directly a carrier's substrate to a die wherein the substrate has connecting points such as bumps formed or having solder balls planted. Thereafter, to perform wire-bonding process in order to electrically connect the dies on the wafer to the corresponding carriers respectively. Subsequently, to perform encapsulating process in order to protect the connecting portion between the dies and the carriers. Finally a die-sawing process is performed in order to form packages of the wafer level packaging.

Abstract: A method and structure for attaching a lead frame to a heat sink are provided. In one embodiment, a layer of thermally conductive, electrically insulating epoxy is formed on a heat sink and the epoxy layer is fully cured. A thermoplastic adhesive layer is formed on the epoxy layer, and the heat sink is clamped to the lead frame such that the thermoplastic layer contacts the lead frame. The thermoplastic layer is heated to its melting point and then cooled, thereby joining the heat sink and the lead frame. In a variation, a partially cured B-stage epoxy layer is used to replace the thermoplastic layer. The B-stage epoxy layer is fully cured to connect the lead frame to the heat sink.