Abstract: Systems, devices, and methods for configurable sensor arrays are provided. An example of a configurable sensor array includes a plurality of sensors in a matrix array formed on a single backplane and a plurality of elements within one of the plurality of sensors, where the plurality of elements provides alternative electrical paths enabling the one of the plurality of sensors to have a range of output impedances.

Abstract: Systems, devices, and methods for configurable sensor arrays are provided. An example of a configurable sensor array includes a plurality of sensors in a matrix array formed on a single backplane and a plurality of elements 432 within one of the plurality of sensors, where the plurality of elements provides alternative electrical paths enabling the one of the plurality of sensors to have a range of output impedances.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: A method forms a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects.

Abstract: A semiconductor device includes a metal oxide channel and methods for forming the same. The metal oxide channel includes indium, gallium, and zinc.

Abstract: An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: An apparatus and method relating to a first inorganic dielectric layer having a first concentration of defects and a second inorganic dielectric layer in contact with a first layer and having a second lesser concentration of defects are disclosed.

Abstract: A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.