Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

Abstract: A semiconductor device can include a channel including a gallium oxide film.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO2, or In2O3. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnO2 or In2O3, the substantially insulating ZnO, SnO2, or In2O3 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.