Patents by Inventor Ravi Joshi

Ravi Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160043034
    Abstract: In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. The forming of the barrier layer includes depositing a solution comprising a metal complex over the substrate and at least partially decomposing of the ligand of the metal complex.
    Type: Application
    Filed: August 7, 2014
    Publication date: February 11, 2016
    Inventor: Ravi Joshi
  • Publication number: 20150371942
    Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.
    Type: Application
    Filed: August 27, 2015
    Publication date: December 24, 2015
    Inventors: Ravi Joshi, Juergen Steinbrenner
  • Publication number: 20150348824
    Abstract: According to various embodiments, a semiconductor wafer may include: a semiconductor body including an integrated circuit structure; and at least one tetrahedral amorphous carbon layer formed at least one of over or in the integrated circuit structure, the at least one tetrahedral amorphous carbon layer may include a substance amount fraction of sp3-hybridized carbon of larger than approximately 0.4 and a substance amount fraction of hydrogen smaller than approximately 0.1.
    Type: Application
    Filed: May 30, 2014
    Publication date: December 3, 2015
    Applicant: Infineon Technologies AG
    Inventors: Matthias Kuenle, Gerhard Schmidt, Martin Sporn, Markus Kahn, Juergen Steinbrenner, Ravi Joshi
  • Publication number: 20150311157
    Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.
    Type: Application
    Filed: June 15, 2015
    Publication date: October 29, 2015
    Inventors: Ravi Joshi, Juergen Steinbrenner
  • Patent number: 9159669
    Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: October 13, 2015
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Ravi Joshi, Juergen Steinbrenner
  • Publication number: 20150221735
    Abstract: In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings. An epitaxial layer is grown on the semiconductor substrate by an epitaxial lateral overgrowth process. The first openings are filled by the epitaxial layer and the epitaxial layer is grown onto adjacent portions of the first dielectric layer so that part of the first dielectric layer is uncovered by the epitaxial layer and a gap forms between opposing sidewalls of the epitaxial layer over the part of the first dielectric layer that is uncovered by the epitaxial layer. The gap defines a first trench in the epitaxial layer that extends to the first dielectric layer.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 6, 2015
    Inventors: Ravi Joshi, Johannes Baumgartl, Martin Poelzl, Matthias Kuenle, Juergen Steinbrenner, Andreas Haghofer, Christoph Gruber, Georg Ehrentraut
  • Publication number: 20150214144
    Abstract: In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes.
    Type: Application
    Filed: January 30, 2014
    Publication date: July 30, 2015
    Applicant: Infineon Technologies AG
    Inventors: Ravi Joshi, Juergen Steinbrenner
  • Publication number: 20050236730
    Abstract: Polyisocyanate-based reaction systems, a pultrusion process of those systems to produce reinforced matrix composites, and to composites produced thereby. The polyisocyanate-based systems are mixing activated reaction systems that include a polyol composition, an optional chain extender or crosslinker, and a polyisocyanate. The polyisocyanate-based systems exhibit improved processing characteristics in the manufacture of fiber reinforced thermoset composites via reactive pultrusion.
    Type: Application
    Filed: May 25, 2005
    Publication date: October 27, 2005
    Inventors: Ravi Joshi, Evan Cheolas
  • Publication number: 20050038222
    Abstract: Filament winding process based on the mixing initiated polymerization of an at least two-component resin system, the system comprising an organic polyisocyanate and a polyfunctional active hydrogen composition as the principle isocyanate reactive species. The invention further provides improved composite articles produced by the filament winding process.
    Type: Application
    Filed: September 21, 2004
    Publication date: February 17, 2005
    Inventors: Ravi Joshi, Evan Cheolas
  • Patent number: 6149210
    Abstract: A hood latch assembly (10) has a housing (14) having a mouth (13). A ratchet (16) is pivotally mounted within the housing (14) to cooperate with the mouth (13) to pivot between an open, a secondary closed and a primary closed condition for receiving, engaging and cinching a keeper of a striker (80). The ratchet (16) is biased to the open condition. A pivotally mounted primary pawl (18) is biased for engagement with the ratchet (16) to releasably retain the ratchet (16) in the primary closed condition. A pivotally mounted secondary pawl (62) is biased for engagement with the ratchet (16) to releasably retain the ratchet (16) in the secondary closed condition. The secondary pawl (62) has a release lever (20) which rotates between a deployed position and a retracted position. As the ratchet (16) engages the striker (80), the ratchet (16) will rotate in a latching sense from the open condition to the secondary closed condition.
    Type: Grant
    Filed: August 16, 1999
    Date of Patent: November 21, 2000
    Assignee: Atoma International Corporation
    Inventors: Trevor Hunt, Ravi Joshi, Dikran Ghorghorian, Kris Tomaszewski
  • Patent number: 5436291
    Abstract: Synthetic biomaterials are provided with irreversibly bound amino diphosphonate, polyphosphonate, or other anticalcification agent to prevent in vivo calcification. Such biomaterials include biocompatible elastomers such as polyurethane and/or polydimethylsiloxane, and the like which are intended for invasive, or in-dwelling use in a human or animal body. Illustratively, reaction conditions utilizing hi-or polyfunctional epoxides result in epoxide bridge incorporation of the anticalcification agent to the biomaterial elastomer.
    Type: Grant
    Filed: January 21, 1994
    Date of Patent: July 25, 1995
    Assignee: University of Michigan, The Board of . . .
    Inventors: Robert J. Levy, Ravi Joshi