Patents by Inventor Raymond S. Tetrick

Raymond S. Tetrick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11042297
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: June 22, 2021
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Mark A. Schmisseur, Raymond S. Tetrick, Robert J. Royer, Jr., David B. Minturn, Shane Matthews
  • Patent number: 10817201
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: October 27, 2020
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Publication number: 20190339869
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Application
    Filed: May 20, 2019
    Publication date: November 7, 2019
    Inventors: Blaise FANNING, Mark A. SCHMISSEUR, Raymond S. TETRICK, Robert J. ROYER, JR., David B. MINTURN, Shane MATTHEWS
  • Publication number: 20190286356
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Application
    Filed: March 25, 2019
    Publication date: September 19, 2019
    Inventors: Blaise FANNING, Shekoufeh QAWAMI, Raymond S. TETRICK, Frank T. HADY
  • Patent number: 10296217
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Grant
    Filed: June 9, 2017
    Date of Patent: May 21, 2019
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Mark A. Schmisseur, Raymond S. Tetrick, Robert J. Royer, Jr., David B. Minturn, Shane Matthews
  • Patent number: 10241710
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: March 26, 2019
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Publication number: 20170336978
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Application
    Filed: June 9, 2017
    Publication date: November 23, 2017
    Applicant: Intel Corporation
    Inventors: BLAISE FANNING, MARK A. SCHMISSEUR, RAYMOND S. TETRICK, ROBERT J. ROYER, JR., DAVID B. MINTURN, SHANE MATTHEWS
  • Publication number: 20170337009
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Application
    Filed: June 30, 2017
    Publication date: November 23, 2017
    Inventors: Blaise FANNING, Shekoufeh QAWAMI, Raymond S. Tetrick, Frank T. HADY
  • Patent number: 9703502
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: July 11, 2017
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Patent number: 9678666
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Grant
    Filed: July 1, 2015
    Date of Patent: June 13, 2017
    Assignee: INTEL CORPORATION
    Inventors: Blaise Fanning, Mark A. Schmisseur, Raymond S. Tetrick, Robert J. Royer, Jr., David B. Minturn, Shane Matthews
  • Publication number: 20170075616
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Application
    Filed: July 19, 2016
    Publication date: March 16, 2017
    Applicant: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Patent number: 9430151
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: August 30, 2016
    Assignee: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Publication number: 20160110106
    Abstract: Examples of a multi-level memory with direct access are described. Examples include designating an amount of a non-volatile random access memory (NVRAM) for use as memory for a computer system. Examples also include designating a second amount of the NVRAM to for use as storage for the computing device. Examples also include re-designating at least a first portion of the first amount of NVRAM from use as memory to use as storage.
    Type: Application
    Filed: October 8, 2015
    Publication date: April 21, 2016
    Applicant: Intel Corporation
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Publication number: 20160034196
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Application
    Filed: July 1, 2015
    Publication date: February 4, 2016
    Applicant: Intel Corporation
    Inventors: Blaise FANNING, Mark A. SCHMISSEUR, Raymond S. TETRICK, Robert J. ROYER, JR., David B. MINTURN, Shane MATTHEWS
  • Patent number: 9190124
    Abstract: Embodiments of a method, device, and system for implementing multi-level memory with direct access are disclosed. In one embodiment, the method includes designating an amount of a non-volatile random access memory (NVRAM) in a computer system to be utilized as a memory alternative for a dynamic random access memory (DRAM). The method continues by designating a second amount of the NVRAM to be utilized as a storage alternative for a mass storage device. Then the method re-designates at least a first portion of the first amount of NVRAM from the memory alternative designation to the storage alternative designation during operation of the computer system. Finally, the method re-designates at least a first portion of the second amount of NVRAM from the storage alternative designation to the memory alternative designation during operation of the computer system.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: November 17, 2015
    Assignee: INTEL CORPORATION
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Patent number: 9098402
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Grant
    Filed: December 21, 2012
    Date of Patent: August 4, 2015
    Assignee: INTEL CORPORATION
    Inventors: Blaise Fanning, Mark A. Schmisseur, Raymond S. Tetrick, Robert J. Royer, Jr., David B. Minturn, Shane Matthews
  • Publication number: 20140181365
    Abstract: Examples are disclosed for configuring a solid state drive (SSD) to operate in a storage mode or a memory mode. In some examples, one or more configuration commands may be received at a controller for an SSD having one or more non-volatile memory arrays. The SSD may be configured to operate in at least one of a storage mode, a memory mode or a combination of the storage mode or the memory mode based on the one or more configuration commands. Other examples are described and claimed.
    Type: Application
    Filed: December 21, 2012
    Publication date: June 26, 2014
    Inventors: BLAISE FANNING, MARK A. SCHMISSEUR, RAYMOND S. TETRICK, ROBERT J. ROYER, JR., DAVID B. MINTURN, SHANE MATTHEWS
  • Publication number: 20130339572
    Abstract: Embodiments of a method, device, and system for implementing multi-level memory with direct access are disclosed. In one embodiment, the method includes designating an amount of a non-volatile random access memory (NVRAM) in a computer system to be utilized as a memory alternative for a dynamic random access memory (DRAM). The method continues by designating a second amount of the NVRAM to be utilized as a storage alternative for a mass storage device. Then the method re-designates at least a first portion of the first amount of NVRAM from the memory alternative designation to the storage alternative designation during operation of the computer system. Finally, the method re-designates at least a first portion of the second amount of NVRAM from the storage alternative designation to the memory alternative designation during operation of the computer system.
    Type: Application
    Filed: December 29, 2011
    Publication date: December 19, 2013
    Inventors: Blaise Fanning, Shekoufeh Qawami, Raymond S. Tetrick, Frank T. Hady
  • Patent number: 7783809
    Abstract: Architectures and techniques that allow legacy pin functionality to be replaced with a “virtual wire” that may communicate information that would otherwise be communicated by a wired interface. A message may be passed between a system controller and a processor that includes a virtual wire value and a virtual wire change indicator. The virtual wire value may include a signal corresponding to one or more pins that have been eliminated from the physical interface and the virtual wire change value may include an indication of whether the virtual wire value has changed. The combination of the virtual wire value and the virtual wire change indicator may allow multiple physical pins to be replaced by message values.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: August 24, 2010
    Assignee: Intel Corporation
    Inventors: Keshavan K. Tiruvallur, David I. Poisner, Herbert H. J. Hum, Frank Binns, David L. Hill, Robert J. Greiner, Raymond S. Tetrick
  • Patent number: 7360027
    Abstract: An arrangement is provided for an external agent to initiate data prefetches from a system memory to a cache associated with a target processor, which needs the data to execute a program, in a computing system. When the external agent has data, it may create and issue a prefetch directive. The prefetch directive may be sent along with system interconnection transactions or sent as a separate transaction to devices including the target processor in the system. When receiving and recognizing the prefetch directive, a hardware prefetcher associated with the target processor may issue a request to the system memory to prefetch data to the cache. The target processor can access data in the cache more efficiently than it accesses data in the system memory. Some pre-processing may also be associated with the data prefetch.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: April 15, 2008
    Assignee: Intel Corporation
    Inventors: Ramakrishna Huggahalli, Brannon J. Batson, Raymond S. Tetrick, Robert G. Blankenship