Abstract: An acoustic wave device that includes a spinel layer, a piezoelectric layer, a temperature compensating layer between the spinel layer and the piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness that is less than ?. In some embodiments, the spinel layer can be a polycrystalline spinel layer.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned under the substrate such that the substrate is positioned between the conductive layer and the grounding structure. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer positioned over a substrate. The acoustic wave device can also include an interdigital transducer electrode positioned over the piezoelectric layer. The acoustic wave device can also include a grounding structure positioned over the piezoelectric layer. The acoustic wave device can also include a conductive layer positioned between the piezoelectric layer and the substrate. The acoustic wave device can further include an electrical pathway that electrically connects the conductive layer to the grounding structure.

Abstract: Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a multi-layer mass loading strip. The mass loading strip has a density that is higher than a density of the temperature compensation layer. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can include a first layer for adhesion and a second layer for mass loading. The mass loading strip can suppress a transverse mode.

Abstract: A surface acoustic wave device is disclosed. The surface acoustic wave device can include a ceramic substrate, a piezoelectric layer over the ceramic substrate, and an interdigital transducer electrode over the piezoelectric layer. The ceramic substrate can be a polycrystalline spinel substrate. The surface acoustic wave device can also include a temperature compensating layer over the interdigital transducer electrode.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers arranged to suppress a spurious response due to shear horizontal mode of the multi-mode surface acoustic wave filter. For example, the acoustic reflector fingers can include stepped lengths and/or slanted pitches to suppress the spurious response due to shear horizontal mode.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and slanted acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with slanted pitches.

Abstract: An acoustic wave device includes a piezoelectric substrate, interdigital transducer electrodes including a predetermined number of electrode fingers disposed on an upper surface of the substrate, and a dielectric material layer having a first portion and a second portion. The first portion is disposed on the upper surface of the substrate and between the interdigital transducer electrode fingers. The second portion is disposed above the interdigital transducer electrode fingers. The acoustic wave device further includes at least one thermally conductive bridge disposed within the dielectric material layer and contacting upper surfaces of at least two adjacent interdigital transducer electrode fingers to dissipate heat therefrom.

Abstract: A SAW element configured to suppress spurious emissions resulting from non-periodicity of an IDT electrode finger arrangement. In one example, the SAW element is a resonator comprising an IDT electrode including a first plurality of IDT electrode fingers connected to a first busbar and a second plurality of IDT electrode fingers connected to a second busbar, and reflectors having a plurality of reflector fingers. The pluralities of first and second IDT electrode fingers are alternatively connected to each busbar by either normal connections or reversed connections and include regions arranged by at least two different types of pitches. The normal connections are such that either the odd-numbered or even-numbered IDT electrode fingers connect to the first busbar, and the reversed connections are such that the opposite group of IDT electrode fingers connect to the first busbar.

Abstract: An acoustic wave device includes a layered substrate having a piezoelectric material layer bonded to a second material layer including a material having a higher thermal conductivity than the piezoelectric material layer, interdigital transducer electrodes disposed on a surface of the piezoelectric material layer, contact pads disposed on the piezoelectric material layer and in electrical contact with the interdigital transducer electrodes, external bond pads disposed on the second material layer, and conductive vias passing through the layered substrate and providing electrical contact between the contact pads and external bond pads.

Abstract: Aspects of this disclosure relate to a surface acoustic wave assembly that includes a first surface acoustic wave filter, a second surface acoustic wave filter, and a thermally conductive sheet configured to dissipate heat from the first surface acoustic wave filter in an area corresponding to the second surface acoustic wave filter. The thermally conductive sheet can be thinner than a piezoelectric layer of the first surface acoustic wave filter. Related radio frequency modules and methods are disclosed.

Abstract: Aspects of this disclosure relate to a surface acoustic wave device that includes a thermally conductive layer configured to dissipate heat of the surface acoustic wave device. The surface acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The thermally conductive layer can be thinner than the piezoelectric layer. Related radio frequency modules and wireless communication devices are disclosed.

Abstract: A SAW element configured to suppress spurious emissions resulting from non-periodicity of an IDT electrode finger arrangement. In one example, the SAW element is a resonator comprising an IDT electrode including a first plurality of IDT electrode fingers connected to a first busbar and a second plurality of IDT electrode fingers connected to a second busbar, and reflectors having a plurality of reflector fingers. The pluralities of first and second IDT electrode fingers are alternatively connected to each busbar by either normal connections or reversed connections and include regions arranged by at least two different types of pitches. The normal connections are such that either the odd-numbered or even-numbered IDT electrode fingers connect to the first busbar, and the reversed connections are such that the opposite group of IDT electrode fingers connect to the first busbar.

Abstract: An acoustic wave device that includes a polycrystalline spinel layer, a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the polycrystalline spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness that is less than ?. In some embodiments, the acoustic wave device can include a temperature compensating layer that is disposed between the piezoelectric layer and the spinel layer.

Abstract: An acoustic wave device that includes a spinel layer, a piezoelectric layer, a temperature compensating layer between the spinel layer and the piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer is disclosed. The piezoelectric layer is disposed between the interdigital transducer electrode and the spinel layer. The acoustic wave device is configured to generate an acoustic wave having a wavelength of ?. The piezoelectric layer can have a thickness that is less than ?. In some embodiments, the spinel layer can be a polycrystalline spinel layer.

Abstract: Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes an acoustic obstacle disposed between canceling circuits coupled to one or more acoustic wave filters. The canceling circuits can cancel frequency components within different frequency bands. The acoustic obstacle can reduce acoustic coupling between the canceling circuits by scattering and/or absorbing acoustic energy.

Abstract: Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes high velocity layers on opposing sides of a piezoelectric layer. A low velocity layer can be positioned between the piezoelectric layer and one of the high velocity layers, in which the low velocity layer has a lower acoustic velocity than the high velocity layers. The acoustic wave device can be configured to generate a boundary acoustic wave such that acoustic energy is concentrated at a boundary of the piezoelectric layer and the low velocity layer.