Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode, and a dielectric layer positioned partially between the piezoelectric layer and the interdigital transducer electrode. The interdigital transducer electrode includes an active region that has a center region and an edge region, a bus bar, and a gap region between the active region and the bus bar. At least a portion of the center region is in direct contact with the piezoelectric layer.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode, and a dielectric layer positioned partially between the piezoelectric layer and the interdigital transducer electrode. The dielectric layer is positioned in an area under a first portion of the interdigital transducer electrode. An area under a second portion different from the first portion is free from the dielectric layer.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode, and a dielectric layer that is positioned partially between the piezoelectric layer and the interdigital transducer electrode. The dielectric layer that is positioned so as to partially electro-mechanically de-couple the piezoelectric layer from the interdigital transducer electrode.

Abstract: An acoustic wave resonator comprises a carrier substrate, a layer of dielectric material disposed on an upper surface of the carrier substrate, and a layer of piezoelectric material disposed above the layer of dielectric material. The layer of piezoelectric material includes a pair of opposing terminating edges that are coterminous with the layer of dielectric material. One or more interdigital transducers (IDTs) are disposed on the layer of piezoelectric material. The opposing terminating edges sandwich the one or more interdigital transducers, and in some examples, a pair of reflector gratings disposed on the layer of piezoelectric material and each including less than eight reflector fingers. The opposing terminating edges provide edge reflections that allow a reduction in size or a complete removal of the reflector gratings, resulting in a smaller acoustic wave resonator compared to conventional devices while maintaining a comparable performance.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

Abstract: A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

Abstract: An acoustic wave device, a method of manufacture of the same, and a radio frequency filter including the same. The acoustic wave device comprises a multilayer piezoelectric substrate (MPS) including a layer of piezoelectric material having a lower surface disposed on an upper surface of a layer of a dielectric material having a lower surface disposed on an upper surface of a carrier substrate. An interdigital transducer (IDT) is disposed on the multilayer piezoelectric substrate and includes an active region configured to generate an acoustic wave. First and second high impedance portions are included within the multilayer piezoelectric substrate, the first and second high impedance portions each positioned outside the active region of the interdigital transducer and extending in the direction of propagation of the acoustic wave to be generated by the interdigital transducer. The first and second high impedance portions reduce side leakage and suppress transverse modes.

Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a first solid acoustic mirror, a second solid acoustic mirror, a piezoelectric layer that is positioned between the first solid acoustic mirror and the second solid acoustic mirror, an interdigital transducer electrode on the piezoelectric layer, and a support substrate arranged to dissipate heat associated with the bulk acoustic wave. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the bulk acoustic wave. The first solid acoustic mirror is positioned on the support substrate.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.

Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can also include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can also include a first interdigital transducer electrode on the first portion of the piezoelectric layer. The acoustic wave device can further include a second interdigital transducer electrode on the second portion of the piezoelectric layer.

Abstract: A method of forming an acoustic wave device is disclosed. The method can include providing a structure having a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first portion and the second portion, a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion, a first interdigital transducer electrode on the first portion of the piezoelectric layer, and a second interdigital transducer electrode on the second portion of the piezoelectric layer. the method can also include etching at least a portion of the piezoelectric layer such that a region over the third substrate portion is free from the piezoelectric layer.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and slanted acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with slanted pitches.

Abstract: A method of manufacturing a surface acoustic wave resonator includes forming or providing a support substrate layer, forming or providing piezoelectric layer of lithium niobate over the support substrate layer, and forming or providing an interdigital transducer electrode including a plurality of fingers over the piezoelectric layer. The piezoelectric layer formed or provided having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.

Abstract: A surface acoustic wave device has a piezoelectric substrate having a cut angle (e.g., the piezoelectric angle is cut so as to have a crystal orientation) that allows the surface acoustic wave device to operate as a longitudinally leaky surface acoustic wave device that confines the acoustic wave energy within the piezoelectric substrate and that has less propagation attenuation and a higher electromechanical coupling coefficient k2.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and stepped acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers with stepped lengths.

Abstract: Multi-mode surface acoustic wave filters are disclosed. A multi-mode surface acoustic wave filter can include a plurality of interdigital transducer electrodes that are longitudinally coupled to each other and acoustic reflectors on opposing sides of the plurality of interdigital transducer electrodes. The acoustic reflectors include acoustic reflector fingers arranged to suppress a spurious response due to shear horizontal mode of the multi-mode surface acoustic wave filter. For example, the acoustic reflector fingers can include stepped lengths and/or slanted pitches to suppress the spurious response due to shear horizontal mode.

Abstract: A packaged acoustic wave component has two acoustic wave devices interconnected by a thermally conductive frame, at least one of the acoustic wave devices including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate includes a support layer and a piezoelectric layer disposed over the support layer. An interdigital transducer (IDT) electrode is disposed over the piezoelectric layer. The support layer has a high thermal conductivity, allowing heat generated by a first acoustic wave device with the multi-layer piezoelectric substrate to be transferred to a second acoustic wave device on which it is stacked to dissipate heat from the first acoustic wave device by way of the thermally conductive frame spaced from ends of the piezoelectric layers.

Abstract: A longitudinally leaky surface acoustic wave device is disclosed. The longitudinally leaky surface acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode over the piezoelectric layer, and a second solid acoustic mirror over the over the interdigital transducer electrode. The interdigital transducer electrode is configured to generate an acoustic wave that propagates in a lateral direction. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave. The piezoelectric layer can have a cut angle of (90±30, 90±30, 40±30).

Abstract: An acoustic wave device is disclosed. the acoustic wave device can include a support substrate, a first solid acoustic mirror over the support substrate, a piezoelectric layer positioned over the first solid acoustic mirror, an interdigital transducer electrode at least partially embedded in the piezoelectric layer, and a second solid acoustic mirror over the over the piezoelectric layer. The interdigital transducer electrode is configured to generate an acoustic wave having a wavelength of L. The first solid acoustic mirror and the second solid acoustic mirror are arranged to confine acoustic energy of the acoustic wave.

Abstract: A laterally excited bulk acoustic wave device is disclosed. The laterally excited bulk acoustic wave device can include a support substrate, a solid acoustic mirror on the support substrate, a piezoelectric layer on the solid acoustic mirror, and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode is arranged to laterally excite a bulk acoustic wave.