Abstract: The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.

Abstract: There is provided an image sensor that includes a pixel array section, a column processing section, and a row control section. The pixel array section is configured to include two or more shared pixel cells arranged in a two-dimensional array, the shared pixel cells each including a plurality of pixels that output electric signals by photoelectric conversion. The column processing section is configured to process the electric signals that are read at the same time from the shared pixel cells on a plurality of rows in the two-dimensional array. The row control section is configured to perform access control differently between one and another of the rows for reading the electric signals from the pixels in the shared pixel cells.

Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.

Abstract: A signal processing device includes a control unit that suspends supplying of a signal to an A/D conversion unit which performs A/D conversion, during an A/D conversion period in which the A/D conversion is performed on the signal that depends on an electric charge read from a pixel; and a maintenance unit that maintains a signal value of the signal in a state where the signal is supplied by the control unit to the A/D conversion unit and that supplies the maintained signal value to the A/D conversion unit in a state where the supplying of the signal to the A/D conversion unit is suspended by the control unit.

Abstract: A comparator includes: a signal input terminal; a capacitor connected between the signal input terminal and a signal line; and a switching transistor for calibration which is turned on/off to periodically charge the capacitor with a voltage difference between a signal voltage and an operating point of the comparator, wherein an on-resistance of the switching transistor which is turned on when performing the charging is dynamically controlled by a control pulse having a limited amplitude.

Abstract: A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.

Abstract: A comparator includes: a signal input terminal; a capacitor connected between the signal input terminal and a signal line; and a switching transistor for calibration which is turned on/off to periodically charge the capacitor with a voltage difference between a signal voltage and an operating point of the comparator, wherein an on-resistance of the switching transistor which is turned on when performing the charging is dynamically controlled by a control pulse having a limited amplitude.

Abstract: A semiconductor device is disclosed that includes a resistive element including a first resistor having a positive temperature coefficient and a second resistor having a negative temperature coefficient. The first resistor includes a metal film.

Abstract: A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a sauce of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and sauce are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's sauce is connected with a first power supply.

Abstract: A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.

Abstract: A temperature detector circuit using a MOS transistor capable of reducing manufacture variation of a mobility and realizing stable output characteristics which are not affected by temperature dependency may be offered. In one example, the temperature detector circuit includes a pair of depression type transistors to output a voltage which is proportional to temperature from a connecting point of a source of a first transistor and a drain of a second transistor. The transistors are the same conducted type of current and are formed in different channel size, which are connected between power supplies in series, and have a configuration in which first transistor's gate and source are connected each other and a first transistor's drain is connected with a second power supply and second transistor's gate and drain are connected each other and a second transistor's source is connected with a first power supply.

Abstract: A semiconductor device is disclosed that includes a resistive element including a first resistor having a positive temperature coefficient and a second resistor having a negative temperature coefficient. The first resistor includes a metal film.