Patents by Inventor Reijiroh Shohji
Reijiroh Shohji has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11201185Abstract: Provided is a solid-state imaging device including a first substrate that includes a pixel unit, a first semiconductor substrate, and a first multi-layered wiring layer stacked, a second substrate that includes circuit, a second semiconductor substrate, and a second multi-layered wiring layer stacked, the circuit having a predetermined function, a third substrate that includes a circuit, a third semiconductor substrate, and a third multi-layered wiring layer. The first substrate and the second substrate being bonded together such that the first multi-layered wiring layer is opposite to the second semiconductor substrate, and a first coupling structure for electrically coupling the circuit of the first substrate with the circuit of the second substrate, the first coupling structure is on bonding surfaces of the first substrate and the second substrate, and includes an electrode junction structure in which electrodes on the respective bonding surfaces are joined to each other in direct contact.Type: GrantFiled: March 23, 2018Date of Patent: December 14, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Ikue Mitsuhashi, Reijiroh Shohji, Minoru Ishida, Tadashi Iijima, Takatoshi Kameshima, Hideto Hashiguchi, Hiroshi Horikoshi, Masaki Haneda
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Publication number: 20210366973Abstract: Provided are a solid-state imaging device and an electronic apparatus with further improved performance. The solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together with the first multi-layered wiring layer and the second semiconductor substrate opposed to each other.Type: ApplicationFiled: August 9, 2021Publication date: November 25, 2021Inventors: HIROSHI HORIKOSHI, MINORU ISHIDA, REIJIROH SHOHJI, TADASHI IIJIMA, TAKATOSHI KAMESHIMA, HIDETO HASHIGUCHI, IKUE MITSUHASHI, MASAKI HANEDA
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Patent number: 11152418Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.Type: GrantFiled: March 23, 2018Date of Patent: October 19, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Takatoshi Kameshima, Hideto Hashiguchi, Ikue Mitsuhashi, Hiroshi Horikoshi, Reijiroh Shohji, Minoru Ishida, Tadashi Iijima, Masaki Haneda
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Publication number: 20210272933Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Applicant: Sony Group CorporationInventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
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Patent number: 11101313Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance. [Solution] A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together with the first multi-layered wiring layer and the second semiconductor substrate opposed to each other.Type: GrantFiled: March 23, 2018Date of Patent: August 24, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hiroshi Horikoshi, Minoru Ishida, Reijiroh Shohji, Tadashi Iijima, Takatoshi Kameshima, Hideto Hashiguchi, Ikue Mitsuhashi, Masaki Haneda
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Patent number: 11094729Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: January 17, 2020Date of Patent: August 17, 2021Inventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20210217797Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.Type: ApplicationFiled: March 29, 2021Publication date: July 15, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideto HASHIGUCHI, Reijiroh SHOHJI, Hiroshi HORIKOSHI, Ikue MITSUHASHI, Tadashi IIJIMA, Takatoshi KAMESHIMA, Minoru ISHIDA, Masaki HANEDA
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Patent number: 11063020Abstract: There is provided a semiconductor device a method for manufacturing a semiconductor device, and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.Type: GrantFiled: July 24, 2019Date of Patent: July 13, 2021Assignee: SONY CORPORATIONInventors: Satoru Wakiyama, Masaki Okamoto, Yutaka Ooka, Reijiroh Shohji, Yoshifumi Zaizen, Kazunori Nagahata, Masaki Haneda
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Patent number: 10998369Abstract: A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.Type: GrantFiled: March 23, 2018Date of Patent: May 4, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Hideto Hashiguchi, Reijiroh Shohji, Hiroshi Horikoshi, Ikue Mitsuhashi, Tadashi Iijima, Takatoshi Kameshima, Minoru Ishida, Masaki Haneda
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Publication number: 20210104572Abstract: There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.Type: ApplicationFiled: March 23, 2018Publication date: April 8, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Takatoshi KAMESHIMA, Hideto HASHIGUCHI, Ikue MITSUHASHI, Hiroshi HORIKOSHI, Reijiroh SHOHJI, Minoru ISHIDA, Tadashi IIJIMA, Masaki HANEDA
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Publication number: 20210104571Abstract: There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.Type: ApplicationFiled: March 23, 2018Publication date: April 8, 2021Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Reijiroh SHOHJI, Masaki HANEDA, Hiroshi HORIKOSHI, Minoru ISHIDA, Takatoshi KAMESHIMA, Ikue MITSUHASHI, Hideto HASHIGUCHI, Tadashi IIJIMA
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Publication number: 20210104570Abstract: [Object] To provide a solid-state imaging device and an electronic apparatus with further improved performance.Type: ApplicationFiled: March 23, 2018Publication date: April 8, 2021Inventors: IKUE MITSUHASHI, REIJIROH SHOHJI, MINORU ISHIDA, TADASHI IIJIMA, TAKATOSHI KAMESHIMA, HIDETO HASHIGUCHI, HIROSHI HORIKOSHI, MASAKI HANEDA
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Publication number: 20210091133Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: December 2, 2020Publication date: March 25, 2021Applicant: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10950647Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: June 26, 2020Date of Patent: March 16, 2021Assignee: SONY CORPORATIONInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10916577Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: GrantFiled: March 19, 2019Date of Patent: February 9, 2021Assignee: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Patent number: 10847744Abstract: To provide a light emitting element, a display device, and an electronic apparatus, less influenced by light emitted outside a light emitting region. A light emitting element includes: a light emitting region formed on a plane; a transparent electrode formed in a planar region that is larger than the light emitting region and internally includes the light emitting region; a reflector disposed under the transparent electrode and formed in the planar region inside the light emitting region; an organic light emitting layer disposed on the transparent electrode and formed so as to extend to the outside of the light emitting region; and a counter electrode disposed on the organic light emitting layer and formed so as to extend to the outside of the light emitting region.Type: GrantFiled: January 24, 2018Date of Patent: November 24, 2020Assignee: Sony Semiconductor Solutions CorporationInventor: Reijiroh Shohji
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Publication number: 20200357723Abstract: The present technology relates to a semiconductor device, an imaging device, and a manufacturing apparatus, capable of providing a semiconductor substrate maintaining and improving insulating performance. A through hole that penetrates the semiconductor substrate, an electrode at the center of the through hole, and a space around the electrode are included. The through hole also penetrates an insulating film formed on the semiconductor substrate. A barrier metal is further included around the electrode. An insulating film is further included in the semiconductor substrate and the space. The semiconductor device has a multilayer structure, and the electrode connects wirings formed in different layers to each other. The present technology can be applied to, for example, an image sensor in which a logic circuit and a sensor circuit are laminated.Type: ApplicationFiled: October 5, 2018Publication date: November 12, 2020Inventor: REIJIROH SHOHJI
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Publication number: 20200328244Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: June 26, 2020Publication date: October 15, 2020Applicant: Sony CorporationInventors: Taku Umebayashi, Hiroshi Takahashi, Reijiroh Shohji
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Publication number: 20200243591Abstract: [Object] To further improve performance of a solid-state imaging device. [Solution] There is provided a solid-state imaging device including: a first substrate; a second substrate; and a third substrate that are stacked in this order. The first substrate includes a first semiconductor substrate and a first multi-layered wiring layer stacked on the first semiconductor substrate. The first semiconductor substrate has a pixel unit formed thereon. The pixel unit has pixels arranged thereon. The second substrate includes a second semiconductor substrate and a second multi-layered wiring layer stacked on the second semiconductor substrate. The second semiconductor substrate has a circuit formed thereon. The circuit has a predetermined function. The third substrate includes a third semiconductor substrate and a third multi-layered wiring layer stacked on the third semiconductor substrate. The third semiconductor substrate has a circuit formed thereon. The circuit has a predetermined function.Type: ApplicationFiled: March 23, 2018Publication date: July 30, 2020Inventors: TADASHI IIJIMA, TAKATOSHI KAMESHIMA, IKUE MITSUHASHI, HIROSHI HORIKOSHI, HIDETO HASHIGUCHI, REIJIROH SHOHJI, MINORU ISHIDA, MASAKI HANEDA
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Publication number: 20200152685Abstract: A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.Type: ApplicationFiled: January 17, 2020Publication date: May 14, 2020Inventors: Taku Umebayashi, Hitoshi Takahashi, Reijiroh Shohji