Abstract: A memory device includes a conductive layer, a plurality of first electrode layers, a first semiconductor layer extending through the plurality of first electrode layers in a first direction toward the plurality of first electrode layers from the conductive layer, a first insulating film including a tunneling insulator film, a charge-trapping film and a blocking insulator film, a second electrode layer, and a semiconductor base. The charge-trapping film is spaced along the first direction from the semiconductor base, a distance in the first direction between the charge-trapping film and the semiconductor base is larger than a thickness of the blocking insulator film in a second direction toward the plurality of first electrode layers from the first semiconductor layer.

Abstract: A memory device includes a conductive layer, a plurality of first electrode layers, a first semiconductor layer extending through the plurality of first electrode layers in a first direction toward the plurality of first electrode layers from the conductive layer, a first insulating film including a tunneling insulator film, a charge-trapping film and a blocking insulator film, a second electrode layer, and a semiconductor base. The charge-trapping film is spaced along the first direction from the semiconductor base, a distance in the first direction between the charge-trapping film and the semiconductor base is larger than a thickness of the blocking insulator film in a second direction toward the plurality of first electrode layers from the first semiconductor layer.

Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.

Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.

Abstract: According to one embodiment, a semiconductor memory includes includes conductors, a pillar through the conductors, a controller. The pillar includes a first pillar portion, a second pillar portion, and a joint portion between the first pillar portion and the second pillar portion. Each of the portions where the pillar and the conductors cross functions as a transistor. Among the conductors through the first pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a first dummy word line and a first word line. Among the conductors through the second pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a second dummy word line and a second word line.

Abstract: A memory device includes first electrode layers stacked in a first direction, a first semiconductor layer piercing the first electrode layers in a first direction, a first insulating film surrounding the first semiconductor layer, and a semiconductor base connected to the first semiconductor layer. The first insulating film includes a first film, a second film, and a third film provided in order in a second direction from the first semiconductor layer toward one of first electrode layers. Spacing in the first direction between the second film and the semiconductor base is wider than a film thickness of the third film in the second direction. A minimum width of an outer perimeter of the first semiconductor layer is substantially the same as a width of an outer perimeter at a portion of the first semiconductor layer piercing the most proximal first electrode layer.

Abstract: According to one embodiment, a semiconductor memory includes includes conductors, a pillar through the conductors, a controller. The pillar includes a first pillar portion, a second pillar portion, and a joint portion between the first pillar portion and the second pillar portion. Each of the portions where the pillar and the conductors cross functions as a transistor. Among the conductors through the first pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a first dummy word line and a first word line. Among the conductors through the second pillar portion, the conductor most proximal to the joint portion and one of the other conductors respectively function as a second dummy word line and a second word line.