Patents by Inventor Reinhold Schoerner
Reinhold Schoerner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11177380Abstract: A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.Type: GrantFiled: March 22, 2019Date of Patent: November 16, 2021Assignee: Infineon Technologies AGInventors: Larissa Wehrhahn-Kilian, Reinhold Schoerner
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Patent number: 10861964Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.Type: GrantFiled: October 26, 2018Date of Patent: December 8, 2020Assignee: Infineon Technologies AGInventors: Roland Rupp, Rudolf Elpelt, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius
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Patent number: 10818749Abstract: A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a Schottky diode structure or metal-insulation-semiconductor gated diode structure arranged at the semiconductor substrate.Type: GrantFiled: December 9, 2016Date of Patent: October 27, 2020Assignee: Infineon Technologies AGInventors: Anton Mauder, Wolfgang Bergner, Jens Peter Konrath, Dethard Peters, Reinhold Schoerner
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Patent number: 10541325Abstract: In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.Type: GrantFiled: October 26, 2018Date of Patent: January 21, 2020Assignee: Infineon Technologies AGInventors: Rudolf Elpelt, Roland Rupp, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius
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Publication number: 20190296143Abstract: A drift structure having a drift zone of a first conductivity type is formed in a SiC semiconductor body of a semiconductor component. Transistor cells each include a doping region and a source region in the SiC semiconductor body. The doping region forms a first pn junction with the drift structure and a second pn junction with the source region. The doping region is electrically connected to a first load electrode. A diode region is formed between the transistor cells and a side surface of the SiC semiconductor body. The diode region is electrically connected to the first load electrode and forms a third pn junction with the drift structure. An emitter efficiency of the diode region is higher than an emitter efficiency of the doping region.Type: ApplicationFiled: March 22, 2019Publication date: September 26, 2019Inventors: Larissa Wehrhahn-Kilian, Reinhold Schoerner
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Publication number: 20190131447Abstract: In termination regions of a silicon carbide substrate field zones are formed by ion implantation. By laterally modulating a distribution of dopants entering the silicon carbide substrate by the ion implantation, a horizontal net dopant distribution in the field zones is set to fall from a maximum net dopant concentration Nmax to Nmax/e within at least 200 nm, with e representing Euler's number. The field zones form first pn junctions with a drift layer.Type: ApplicationFiled: October 26, 2018Publication date: May 2, 2019Inventors: Rudolf Elpelt, Roland Rupp, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius
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Publication number: 20190131446Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.Type: ApplicationFiled: October 26, 2018Publication date: May 2, 2019Inventors: Roland Rupp, Rudolf Elpelt, Reinhold Schoerner, Larissa Wehrhahn-Kilian, Bernd Zippelius
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Patent number: 10014383Abstract: A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal nitride layer being formed in contact with a semiconductor material. A semiconductor device includes a semiconductor material and a metal nitride layer in contact with the semiconductor material. The metal nitride has a nitrogen content larger than a solubility limit of nitrogen in the metal nitride.Type: GrantFiled: December 17, 2014Date of Patent: July 3, 2018Assignee: Infineon Technologies AGInventors: Jens Peter Konrath, Hans-Joachim Schulze, Reinhold Schoerner
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Publication number: 20170170264Abstract: A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. The semiconductor device further includes a plurality of compensation regions arranged in the semiconductor substrate. The plurality of compensation regions has a second conductivity type. Each drift region of the plurality of drift regions is arranged adjacent to at least one compensation region of the plurality of compensation regions. The semiconductor device further includes a Schottky diode structure or metal-insulation-semiconductor gated diode structure arranged at the semiconductor substrate.Type: ApplicationFiled: December 9, 2016Publication date: June 15, 2017Inventors: Anton Mauder, Wolfgang Bergner, Jens Peter Konrath, Dethard Peters, Reinhold Schoerner
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Publication number: 20160181388Abstract: A method of manufacturing a semiconductor device includes introducing nitrogen into a metal layer or into a metal nitride layer, the metal layer or metal nitride layer being formed in contact with a semiconductor material. A semiconductor device includes a semiconductor material and a metal nitride layer in contact with the semiconductor material. The metal nitride has a nitrogen content larger than a solubility limit of nitrogen in the metal nitride.Type: ApplicationFiled: December 17, 2014Publication date: June 23, 2016Inventors: Jens Peter Konrath, Hans-Joachim SCHULZE, Reinhold Schoerner
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Patent number: 7646026Abstract: An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.Type: GrantFiled: September 19, 2006Date of Patent: January 12, 2010Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner, Dietrich Stephani
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Patent number: 7615802Abstract: The invention relates to a semiconductor structure for controlling a current (I), comprising a first n-conductive semiconductor region (2), a current path that runs within the first semiconductor region (2) and a channel region (22). The channel region (22) forms part of the first semiconductor region (2) and comprises a base doping. The current (I) in the channel region (22) can be influenced by means of at least one depletion zone (23, 24). The channel region (22) contains an n-conductive channel region (225) for conducting the current, said latter region having a higher level of doping than the base doping. The conductive channel region (225) is produced by ionic implantation in an epitaxial layer (262) that surrounds the channel region (22).Type: GrantFiled: March 19, 2003Date of Patent: November 10, 2009Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Rudolf Elpelt, Heinz Mitlehner, Reinhold Schörner
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Patent number: 7206178Abstract: A switching device includes a working circuit, to which an operating voltage can be or is applied to which has at least one electronic switching element. This switching element includes at least one control terminal for applying a switching signal and is switched off or switched on depending on the switching signal. At least one electronic protection element is for protecting the switching element in its switched state from excessive Joule losses in the event of danger, especially in the event of an overload or a short circuit. The protection element bears the predominant part of the operating voltage that is released at the working circuit.Type: GrantFiled: December 3, 2001Date of Patent: April 17, 2007Assignee: Siemens AktiengesellschaftInventors: Peter Friedrichs, Gerd Griepentrog, Reinhard Maier, Heinz Mitlehner, Reinhold Schörner
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Patent number: 7082020Abstract: A switching device includes at least one MOSFET switching element and at least one JFET protective element, which is connected electrically in series to the switching element and which limits the electric current to a maximum current (saturated current) and control elements, which increase the maximum current of the JFET protective element during the closing operation or in a time-delayed manner, at least in the temporal mean, to at least a higher value and subsequently reduce said maximum current to at least a lower value. The advantage of said switching device is that it allows higher starting or closing overcurrents, which are subsequently limited.Type: GrantFiled: January 3, 2002Date of Patent: July 25, 2006Assignee: Siemens AktiengesellschaftInventors: Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner
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Patent number: 7071503Abstract: A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.Type: GrantFiled: September 24, 2004Date of Patent: July 4, 2006Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Karl Dohnke, Rudolf Elpelt, Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner
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Patent number: 6936850Abstract: The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.Type: GrantFiled: March 22, 2002Date of Patent: August 30, 2005Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schoerner
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Patent number: 6815351Abstract: A semiconductor configuration with an ohmic contact-connection includes a p-conducting semiconductor region made of silicon carbide. A p-type contact region serves for the contact-connection. The p-type contact region is composed of a material containing at least nickel and aluminum. A substantially uniform material composition is present in the entire p-type contact region. A method for contact-connecting p-conducting silicon carbide with a material containing at least nickel and aluminum is also provided. The two components nickel and aluminum are applied simultaneously on the p-conducting semiconductor region.Type: GrantFiled: March 7, 2003Date of Patent: November 9, 2004Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner
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Patent number: 6693322Abstract: A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.Type: GrantFiled: January 27, 2003Date of Patent: February 17, 2004Assignee: SiCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Heinz Mitlehner, Reinhold Schörner
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Patent number: 6667495Abstract: A semiconductor configuration with ohmic contact-connection includes a first and a second semiconductor region made of silicon carbide, each having a different conduction type. A first and a second contact region serve for contact-connection. The first contact region and the second contact region have an at least approximately identical material composition which is practically homogeneous within the respective contact region. A method is provided for contact-connecting n-conducting and p-conducting silicon carbide, in each case with at least approximately identical material.Type: GrantFiled: December 8, 2000Date of Patent: December 23, 2003Assignee: SciCED Electronics Development GmbH & Co. KGInventors: Peter Friedrichs, Dethard Peters, Reinhold Schörner
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Patent number: 6468890Abstract: The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer (110), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.Type: GrantFiled: March 2, 2001Date of Patent: October 22, 2002Assignee: Siced Electronics Development GmbH & Co. KGInventors: Wolfgang Bartsch, Reinhold Schörner, Dietrich Stephani