Abstract: The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.

Abstract: A semiconductor structure includes at least one &agr;-silicon carbide region and an electrically insulating region, e.g. made of an oxide layer, and an interface located between them. The selection of an &agr;-silicon carbide polytype having a smaller energy gap than that of the 6H silicon carbide polytype for at least one region near the interface results in a high charge carrier mobility in this region.

Abstract: The SiC semiconductor structure contains at least three semiconductor regions. The surface area of the third semiconductor region encompasses that of the second semiconductor region as a second partial area, which in turn encloses the surface of the first semiconductor region as a first partial area. The contour of the edge of the second partial area is determined by the contour of the edge of the first partial area to the effect that the second partial area can be represented essentially as a specially enlarged mapping of the first partial area, the deviation of the contour of the edge of the second partial area from the exact contour that results in the course of the mapping being at most ±10 nm.

Abstract: A thin-film system is deposited onto a surface of a semiconductor region. After at least one window has been opened in the thin-film system, the window serves as a mask for a first selective processing of a first semiconductor partial region. By undercutting the thin-film system, the edge of the window is drawn back approximately uniformly by a mean undercutting depth. The at least one enlarged window serves as a mask for a second selective processing of a second semiconductor partial region. A semiconductor structure is also provided.

Abstract: A method for producing a MIS structure on silicon carbide is provided. Given application of a known CVD method for occupying the surface of a SiC substrate provided with a gate oxide with the silicon serving as gate material, stationary positive charges arise in the region of the oxide/SiC boundary surface whose extremely high effective density (Q.sub.tot >10.sup.12 cm.sup.-2) disadvantageously influences the electrical properties of the finished component. The present method modifies the deposition conditions for the silicon serving as a gate material. Thus, the silicon is deposited from the vapor phase at a temperature of T<580.degree. C. and is thus amorphously applied. During the subsequent doping (drive-in of phosphorous at T>800.degree. C.), the amorphous silicon converts into the polycrystalline condition.