Abstract: A semiconductor device includes an active region, a LOCOS region formed within the active region and that extends vertically above a top surface of the active region, a gate region formed above the top surface of the active region, and a polysilicon resistor having a bottom surface that is offset vertically and physically isolated from a top surface of the LOCOS region. The active region includes a source region laterally disposed from the gate region, a drain region laterally disposed from the gate region, and a drift region laterally disposed between the gate region and the drain region. The polysilicon resistor is formed above the drift region. The active region further includes a first charge balance region formed in the active region below the drift region.

Abstract: An information indicating method, an information determining method, a terminal and a base station are provided. The information indicating method includes: indicating, by using a predetermined parameter of a physical broadcast channel (PBCH) in a first system synchronization block (SSB), whether the first SSB includes associated remaining minimum system information (RMSI); or indicating, by using a predetermined parameter of a PBCH in a first SSB, that the first SSB does not include associated RMSI, and indicating frequency offset information of a synchronization raster where a second SSB is located, where the second SSB is an SSB with the associated RMSI.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

Abstract: Disclosed are a method and apparatus for determining an RA-RNTI. In the present application, a base station receives a random access preamble sent by a terminal; the base station determines an RA-RNTI according to a time-frequency resource occupied by the random access preamble, and the time-frequency resource is a time-frequency resource of an orthogonal frequency division multiplexing (OFDM) symbol level; and the base station sends a random access response message, and the random access response message includes downlink control information allocated, by the base station, for the terminal, and the downlink control information is scrambled using the RA-RNTI. By means of the present application, an RA-RNTI can be determined during a random access process of an NR system.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

Abstract: Techniques for providing suggested content is described. For example, a social networking system may receive, from an account of a social networking system, an indication of a selection of a first content item. The social networking system may determine that the first content item is associated with a first topic and may receive a request from the account to access a second content item associated with the first topic. The social networking system may then cause presentation of the second content item and may determine that the request meets or exceeds a threshold number of requests for content items associated with the first topic. Based on determining that the request meets or exceeds the threshold, the social networking system may cause presentation of a suggested content item associated with a second topic.

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Abstract: A method is provided. The method includes determining a first bump map indicative of a first set of positions of bumps. The method includes determining, based upon the first bump map, a first plurality of bump densities associated with a plurality of regions of the first bump map. The method includes smoothing the first plurality of bump densities to determine a second plurality of bump densities associated with the plurality of regions of the first bump map. The method includes determining, based upon the second plurality of bump densities, a second bump map indicative of the first set of positions of the bumps and a set of sizes of the bumps.

Abstract: An anti-surge resistor and a fabrication method thereof are provided. The current anti-surge resistor includes a substrate made by a varistor material, a resistance layer disposed on the substrate, a first terminal electrode, and a second terminal electrode. In the fabrication method of the current anti-surge resistor, at first, the substrate made by the varistor material is provided. Then, the resistance layer is formed on the substrate to provide a main body, in which the main body includes the substrate and the resistance layer, and has two opposite terminals. Thereafter, the first terminal electrode is formed on one terminal of the main body, and the second terminal electrode is formed on the other terminal of the main body.

Abstract: Introduced here are computer programs and associated computer-implemented techniques for deriving insights into the health of patients through analysis of audio data generated by electronic stethoscope systems. A diagnostic platform may be responsible for examining the audio data generated by an electronic stethoscope system so as to gain insights into the health of a patient. The diagnostic platform may employ heuristics, algorithms, or models that rely on machine learning or artificial intelligence to perform auscultation in a manner that significantly outperforms traditional approaches that rely on visual analysis by a healthcare professional.

Abstract: Introduced here are computer programs and associated computer-implemented techniques for deriving insights into the health of patients through analysis of audio data generated by electronic stethoscope systems. A diagnostic platform may be responsible for examining the audio data generated by an electronic stethoscope system so as to gain insights into the health of a patient. The diagnostic platform may employ heuristics, algorithms, or models that rely on machine learning or artificial intelligence to perform auscultation in a manner that significantly outperforms traditional approaches that rely on visual analysis by a healthcare professional.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a first device and a second device disposed adjacent to the first device; a conductive pillar disposed adjacent to the first device or the second device; a molding surrounding the first device, the second device and the conductive pillar; and a redistribution layer (RDL) over the first device, the second device, the molding and the conductive pillar, wherein the RDL electrically connects the first device to the second device and includes an opening penetrating the RDL and exposing a sensing area over the first device.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure.

Abstract: The present disclosure relates to an integrated chip including a semiconductor layer and a photodetector disposed along the semiconductor layer. A color filter is over the photodetector. A micro-lens is over the color filter. A dielectric structure comprising one or more dielectric layers is over the micro-lens. A receptor layer is over the dielectric structure. An optical signal enhancement structure is disposed along the dielectric structure and between the receptor layer and the micro-lens.

Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity.

Abstract: A method of making a biochip includes forming an opening extending completely through a fluidic substrate. Forming the opening includes defining a plurality of sidewalls on the fluidic substrate, wherein the plurality of sidewalls defines a channel in fluid communication with the opening, and each of the plurality of sidewalls comprises polydimethylsiloxane (PDMS). The method further includes coating a surface of the fluidic substrate with a silicon oxide coating wherein, the silicon oxide coating is between adjacent sidewalls of the plurality of sidewalls. The method further includes bonding the fluidic substrate to a detection substrate.

Abstract: A method of fabricating a semiconductor structure includes: providing a first wafer; providing a second wafer having a first surface and a second surface opposite to the first surface; contacting the first surface of the second wafer with the first wafer; and forming a plurality of scribe lines on the second surface of the second wafer, wherein the formation of the plurality of scribe lines includes removing portions of the second wafer from the second surface towards the first surface to form a third surface between the first surface and the second surface, and the plurality of scribe lines protrudes from the third surface of the second wafer.