Abstract: An electrical component having an insulating housing with the housing having a bottom mounting surface and at least one anchor element receiving aperture extending up into the housing from the bottom surface of the housing. An anchor element, having a bottom end, is shaped and sized to be inserted into the aperture from the bottom of the housing, the element frictionally held by the housing in the aperture with the element projecting slightly from the aperture to have its bottom end spaced slightly from the bottom surface of the housing.

Abstract: The invention provides an electrical connector for mounting to a circuit board. The electrical connector has a plurality of elongated contact elements mounted to an electrically insulating base that supports the contact elements side-by-side. The base of electrically insulating material includes a circuit board facing side that faces the circuit board when the contact elements are inserted through the circuit board. A spacer adjacent the circuit board facing side engages the circuit board when the contact elements are inserted in the circuit board to maintain a gap between the circuit board and the circuit board facing side of the electrically insulating base.

Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.

Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.

Abstract: This invention relates generally to the field of growth factor. In particular, the invention provides an isolated nucleic acid fragment, comprising a sequence of nucleotides encoding a Kringle domain 1 of human hepatocyte growth factor (HGFK1). Proteins or peptides encoded by the HGFK1 nucleic acids are also provided. Compositions comprising HGFK1 nucleic acids, proteins, or functional derivatives or fragments are also provided. Methods for producing and/or using HGFK1 nucleic acids, proteins, or functional derivatives or fragments are further provided.

Abstract: The current invention provides for magnetic sensor devices with reduced gap thickness and improved thermal conductivity. Gap structures of the current invention are integrated in laminated Magneto-Resistive and Spin-Valve sensors used in magnetic data storage systems. The gap structures are produced by depositing metal layers and oxidizing portions of or all of the metal layers to form thin high quality oxidized metal dielectric separator layers. The oxidized metal layer provides for excellent electrical insulation of the sensor element and any remaining metallic portions of the metal layers provide a thermally conducting pathway to assist the dissipation of heat generated by the sensor element. Because of the combined qualities of electrical insulation and thermal conductivity, magnetic sensor devices of this invention can be made with thinner gap structures and operated at higher drive currents.

Abstract: An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2 composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.

Abstract: The chemical vapor deposition of a single phase of a double metal oxide having a stoichiometric ratio results in a fully dense film. The film is deposited by polycondensation of a partially hydrolyzed precursor reacted from water vapor mixed with a volatile, metalorganic precursor having the desired stoichiometric ratio. The film may be annealed to form a perfect crystal of stoichiometric, single phase, double metal oxide having substantially improved optical characteristics for laser light transmission and other electro-optical applications.

Abstract: Amorphous ferroelectric materials are formed by a sol-gel type process and the ferroelectric properties stabilized by complete hydrolysis and polycondensation, and extraction of residual organic materials, preferably by heating at temperatures below the temperature at which crystallization may occur. Stable solutions of metal alkoxides are prepared by reacting or dissolving a metal alkoxide in alcohol such as absolute ethanol. The solution may be spincast on essentially any substrate, conductor or nonconductor, crystalline or amorphous, transparent or opaque, and even including plastics. Hydrolysis and polycondensation occur in situ to deposit an amorphous ferroelectric film. Residual alcohol is extracted by heating below the temperature at which crystallization occurs. Such films show P-E hysteresis loops and pyroelectric current. Such ferroelectric thin films are useable in electronic, opto-electronic and optical devices.