Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: The present disclosure relates to a difficult airway evaluation method and device based on a machine learning voice technology. The method includes the following steps: acquiring voice data of a patient; carrying out feature extraction on the voice data, obtaining a pitch period of pronunciations, and acquiring a voiced sound feature and unvoiced sound features based on the pitch period of pronunciations; and constructing a difficult airway evaluation classifier based on the machine learning voice technology, analyzing the received voiced sound feature and unvoiced sound features by the trained difficult airway evaluation classifier, and carrying out scoring on the severity of a difficult airway to obtain an evaluation result of the difficult airway.

Abstract: A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.

Abstract: This application provides a plate for a semiconductor processing apparatus, the plate including a first electrode and a second electrode, where the first electrode is selectively coupled to a first ground terminal via a first switch, the second electrode is selectively coupled to a second ground terminal via a second switch, and the first electrode and the second electrode are electrically isolated from each other.

Abstract: The disclosure relates to an artificial intelligence-based difficult airway evaluation method and device. The method includes the following steps: acquiring facial images of various postures; constructing a feature extraction network based on facial recognition, and extracting feature information of the facial images through the trained feature extraction network; and constructing a difficult airway classifier based on a machine learning algorithm, and performing difficult airway severity scoring on the extracted feature information of the facial images through the trained difficult airway classifier to obtain an evaluation result of a difficult airway. According to the present disclosure, early warning can be accurately provided for difficult airways in clinical anesthesia.

Abstract: The invention provides a wafer heating pedestal including a shaft connected to a bottom of a plate. The shaft holds a contact array being in contact with plural contact pads of the plate. The contact array includes plural contact columns.

Abstract: A plate for supporting wafer has a top for carrying a wafer and a bottom coupled to a pedestal. The plate includes multiple heating units embedded within the plate and at least one set of grooves formed between the top and the bottom of the plate at a radial location between two of neighboring heating units to thereby enhance heat insulation among the heating units.

Abstract: The invention provides a wafer heating pedestal including a shaft connected to a bottom of a plate. The shaft holds a contact array being in contact with plural contact pads of the plate. The contact array includes plural contact columns.

Abstract: The invention discloses a semiconductor multi-station processing chamber. Each of the multiple station includes a downward concave accommodation defined by walls and receives a pedestal therein. The pedestal and the walls define a first gap. A showerhead plate mounted on an upper lid above the pedestal to define a processing region. A second gap for supply swiping gas is defined between the showerhead plate and the upper lid. An isolation member is liftable between the downward concave accommodation and the showerhead plate to optionally encircle a processing region defined by the pedestal and the showerhead plate or to retract back into the downward concave accommodation. Such that, when the isolation member surrounds and encircles the processing region, the station is able to be structurally isolated from its neighboring one station.

Abstract: A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.

Abstract: A plate for supporting wafer has a top for carrying a wafer and a bottom coupled to a pedestal. The plate includes multiple heating units embedded within the plate and at least one set of grooves formed between the top and the bottom of the plate at a radial location between two of neighboring heating units to thereby enhance heat insulation among the heating units.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: The present invention discloses a wafer pedestal including a plate, a heating assembly and a heat insulation assembly embedded in the plate at a radial position that divides the plate into a first heating zone and a second heating zone.

Abstract: The invention discloses a support structure for a wafer pedestal; particularly the wafer pedestal has a wafer carrying surface defining holes for accommodation of the support structure. The support structure includes a first surface and extends therebetween. The first surface includes a rising portion for supporting wafer. A center of the first surface and a center of the second surface define an axis that is not parallel to the normal of the first surface. That is, the first surface extends oblique relatively to the second surface such that the support structure according to the invention can be received in the pedestal in an oblique way relative to the wafer carrying surface of the pedestal.

Abstract: The invention discloses a support structure for a wafer pedestal; particularly the wafer pedestal has a wafer carrying surface defining holes for accommodation of the support structure. The support structure includes a first surface and extends therebetween. The first surface includes a rising portion for supporting wafer. A center of the first surface and a center of the second surface define an axis that is not parallel to the normal of the first surface. That is, the first surface extends oblique relatively to the second surface such that the support structure according to the invention can be received in the pedestal in an oblique way relative to the wafer carrying surface of the pedestal.

Abstract: Disclosed is a load lock chamber which includes a chamber body including: at least one pair of cavities, defined in a layer structure of the chamber body to carry one or more wafer substrates; at least one internal conduit, defined between and coupled with the paired cavities, such that the paired cavities are communicated with each other and capable of conducting gas refilling and exhaustion; and a plurality of wafer supports for carrying the wafer substrates, the plurality of wafer supports being securely received in the paired cavities and able to calibrate with a machine arm frontend finger, wherein the wafer support includes grooves defined thereon for calibrating the machine arm frontend finger.

Abstract: Provided is a method for preparing sulfuric acid by using hydrogen sulfide. The method comprises the following steps: (1) performing a reduction-oxidation reaction between an H2S feed gas and oxygen to prepare SO2; (2) cooling the product acquired in step (1) to a temperature between 390° C. and 430° C., then performing a catalyzed oxidation reaction with oxygen; and (3) cooling the product acquired in step (2), then further cooling to a temperature between 60° C. and 120° C., collecting H2SO4 product. Also provided is a heat exchanger, comprising a housing and several glass pipes arranged within the housing along the direction of a long axis of the housing, arching between two lateral walls thereof; the adjacent glass pipes are connected head-to-tail. The method provides great hydrogen sulfide removal efficiency, simple process flow, and allows for economic efficiency of apparatus and reasonable utilization of energy.

Abstract: A method of stimulation therapy and an apparatus for providing the therapy which addresses cardiac dysfunction including heart failure. The therapy employs atrial pacing pulses delivered to a heart after the atrial refractory period and timed so that they will not cause a ventricular contraction. These atrial pacing are timed to achieve beneficial effects on myocardial mechanics (efficacy) while maintaining an extremely low level of risk of arrhythmia induction. These methods may be employed individually or in combinations in an external or implantable ESS therapy delivery device.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing having a backing member having a bonding surface, an inner electrode having a lower surface on one side and a bonding surface on the other side, and an outer electrode having a lower surface on one side and a bonding surface on the other side. At least one of the electrodes has a flange, which extends underneath at least a portion of the lower surface of the other electrode.

Abstract: Provided is a method for preparing sulfuric acid by using hydrogen sulfide. The method comprises the following steps: (1) performing a reduction-oxidation reaction between an H2S feed gas and oxygen comprised in an oxygen-rich air to prepare SO2, controlling residual oxygen after the reduction-oxidation reaction step at a molar percentage of ?2%; (2) cooling the product acquired in step (1) to a temperature between 390° C. and 430° C., and then performing a catalyzed oxidation reaction with oxygen, wherein the catalyzed oxidation reaction is performed in stages until the conversion rate of SO2 is ?98.7% or the outlet concentration of SO2 is ?550 mg/Nm3; and (3) cooling the product acquired in step (2) to a temperature ?10° C. over the dew point temperature of H2SO4, then further cooling to a temperature between 60° C. and 120° C., collecting H2SO4 product, and subjecting the gas acquired after cooling to a coalescent separation before discharging directly into the atmosphere.