Abstract: Implementations described herein relate to systems and methods treating high-k materials for use in forming MIM capacitors. Including various high-density plasma nitridation processes or combinations of high-density plasma oxidation processes and high-density plasma nitridation processes are provided.

Abstract: A method and apparatus for growing an oxide layer within a feature of a substrate is described herein. The method is suitable for use in semiconductor manufacturing. The oxide layer is formed by exposing a substrate to both a high pressure oxidant exposure and a lower pressure oxygen containing plasma exposure. The high pressure oxidant exposure is performed at a pressure of greater than 10 Torr, while the lower pressure oxygen containing plasma exposure is performed at a pressure of less than about 10 Torr. The features are high-aspect ratio trenches or holes within a stack of silicon oxide and silicon nitride layers.

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

Abstract: Embodiments of the present disclosure generally relate to high efficiency inductively coupled plasma sources and plasma processing apparatus. Specifically, embodiments relate to grids to improve plasma uniformity. In one embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a processing chamber, a substrate support disposed within the processing chamber, a grid support coupled to the processing chamber, and a grid. The grid is coupled to the grid support and disposed above the substrate support. The grid has a plurality of holes and one or more outer openings defined between a circumference of the grid and the grid support. Plasma received from a plasma source is configured to flow through the plurality of holes and the one or more outer openings of the grid towards the substrate support.

Abstract: A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

Abstract: A plasma generating component for a process chamber includes a first pair of linear electrodes. Each electrode of the first pair of linear electrodes extends from a first edge of a plasma generating region of the plasma generating component to a second edge of the plasma generating region of the plasma generating component. Electrodes of the first pair of linear electrodes are substantially parallel. The plasma generating component further includes a second pair of linear electrodes, substantially parallel to the first pair of linear electrodes. The plasma generating component further includes a dielectric support to which the first pair of linear electrodes and the second pair of linear electrodes are secured.

Abstract: A process chamber is provided including a chamber body disposed around a process volume, the process volume bounded by one or more interior side walls; a substrate support in the process volume; a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume; and a first deflector positioned at least partially in the process volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom. The one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the process volume.

Abstract: A method includes obtaining lyrics text and audio for a media item and generating, using a first encoder, a first plurality of embeddings representing symbols that appear in the lyrics text for the media item. The method includes generating, using a second encoder, a second plurality of embeddings representing an acoustic representation of the audio for the media item. The method includes determining respective similarities between embeddings of the first plurality of embeddings and embeddings of the second plurality of embeddings and aligning the lyrics text and the audio for the media item based on the respective similarities. The method includes, while streaming the audio for the media item, providing, for display, the aligned lyrics text with the streamed audio.

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

Abstract: Embodiments of the present disclosure generally relate to a plasma processing apparatus. The plasma processing apparatus includes a processing chamber including a substrate support operable to hold a substrate, a main plasma source coupled with the processing chamber, a plate, a cavity, and an edge plasma generator. The cavity is housed within the plate and spaced radially outward from a dielectric sidewall of the main plasma source.

Abstract: Embodiments of the present disclosure relate to methods and apparatuses of processing a substrate. The apparatus includes a process chamber, the process chamber including a chamber body, a substrate support, and a remote plasma source. The substrate support is configured to support a substrate within the processing region. The remote plasma source is coupled to the chamber body through a connector. The remote plasma source includes a body, an inlet, an inductive coil, and one or more UV sources. The body has a first end, a second end, and a tube spanning between the first end and the second end. The inlet is coupled to a gas source configured to introduce one or more gases into the body through the first end of the body. The inductive coil loops around the tube. The one or more UV sources are coupled to the first end of the body.

Abstract: A method includes obtaining lyrics text and audio for a media item and generating, using a first encoder, a first plurality of embeddings representing symbols that appear in the lyrics text for the media item. The method includes generating, using a second encoder, a second plurality of embeddings representing an acoustic representation of the audio for the media item. The method includes determining respective similarities between embeddings of the first plurality of embeddings and embeddings of the second plurality of embeddings and aligning the lyrics text and the audio for the media item based on the respective similarities. The method includes, while streaming the audio for the media item, providing, for display, the aligned lyrics text with the streamed audio.

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

Abstract: A system, method, and apparatus for processing substrates. A plasma generation assembly includes a support structure configured to be disposed within a processing chamber, the support structure forming a set of ducts. The plasma generation assembly further includes a plasma generation cell selectively removable from and selectively replaceable within one of set of ducts. The plasma generation cell includes a dielectric barrier discharge (DBD) structure. The DBD structure includes a set of electrodes disposed along a first dielectric surface and covered by a second dielectric layer. The DBD structure is configured to initiate plasma discharge within the processing chamber. The DBD structure further includes electrical terminals coupled the DBD structure with an electric driving network.

Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber and a support structure disposed within the processing chamber. The support structure forms a set of ducts. The plasma processing system further includes a plurality of plasma generation cells disposed within corresponding ducts of the set of ducts. The plasma generation cells are configured to be selectively activated or deactivated. The plasma generating structure supplies plasma related fluxes to a region of the processing chamber responsive to being activated. The plasma processing system further includes a network of electrical connectors coupled to each of the plurality of plasma generation cells. The network of electrical connectors are configured to supply electrical signals that selectively activate or deactivate individual plasma generation cells.

Abstract: Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

Abstract: A system, method, and apparatus for processing substrates. A plasma processing system includes a processing chamber having a chamber body having walls with a first material enclosing an interior volume. The plasma processing system further includes a plasma source designed to expose a substrate disposed within the processing chamber to plasma related fluxes. The first material has a first set of recombination coefficients associated with the plasma related fluxes. The plasma processing system further includes a second material disposed along a first region of the chamber body, the first material having a second set of plasma recombination coefficients associated with the plasma related fluxes. The second set of plasma recombination coefficients is different that the first set of plasma recombination coefficients.