Abstract: A semiconductor device includes a first pad and a second pad. A first conductivity type transistor is coupled between a first potential and the second pad, and a second conductivity type transistor is coupled between a second potential and the second pad. A comparator includes a first input node coupled to the first pad and a second input node coupled to the second pad. A circuit receives a signal from the first pad or outputs a signal to the first pad, wherein the first pad is coupled to gate electrodes of the first and second conductivity type transistors.

Abstract: In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern Pla is formed in the same layer as that of a second layer wiring and the pattern Pib is formed in the same layer as that of a first layer wiring. Further, the pattern P2 is formed in the same layer as that of a gate electrode, and the pattern P3 is formed in the same layer as that of an element isolation region.

Abstract: The invention provides a semiconductor integrated circuit device provided with an SRAM that satisfies the requirements for both the SNM and the write margin with a low supply voltage. The semiconductor integrated circuit device include: multiple static memory cells provided in correspondence with multiple word lines and multiple complimentary bit lines; multiple memory cell power supply lines that each supply an operational voltage to each of the multiple memory cells connected to the multiple complimentary bit lines each; multiple power supply circuits comprised of resistive units that each supply a power supply voltage to the memory cell power supply lines each; and a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines, wherein the memory cell power supply lines are made to have coupling capacitances to thereby transmit a write signal on corresponding complimentary bit lines.

Abstract: An apparatus provides good bonding between a package structure and a substrate and extended solder bonding life, even under heat stress. Of a lead frame to be used for a package structure having a configuration in which a semiconductor chip, an island of the lead frame, and external connection terminals are sealed with a resin from one surface, and the island and the external connection terminals are exposed on the other surface, the external connection terminals include a first external connection terminal disposed at a central part of each of sides of an outer rim of a semiconductor chip mounting region in which the semiconductor chip is to be mounted and a second external connection terminal outside the first external connection terminal at each of the sides of the outer rim of the semiconductor chip mounting region, wherein the first external connection terminal area exceeds the second external connection terminal's.

Abstract: To improve reading accuracy of a sense amplifier circuit and a semiconductor memory device. A sense amplifier circuit includes an N type FET which is a sensing transistor connected between a power supply and a ground via a data line that extends to a memory cell, a resistance element that is connected between a gate of the sensing transistor and the power supply, and a capacitance element that is connected between the gate of the sensing transistor and the ground.

Abstract: A semiconductor integrated circuit includes a bypass circuit that forms a bypass path under a low voltage condition, and the bypass circuit includes first and second bypass MOS transistors respectively placed between drains of first and second PMOS transistors and a ground voltage terminal, each transistor having a gate to which a second power supply voltage is applied, and third and fourth bypass MOS transistors respectively placed between the first and second bypass MOS transistors and the ground voltage terminal, each transistor controlled to be ON and OFF in accordance with an input signal and a voltage condition.

Abstract: A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 ?m.

Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.

Abstract: A power device possesses a built-in fuse function and can continue to normally operate after a short circuit failure. The power device includes a plurality of output cells, a plurality of bonding wires provided corresponding to the output cells, and a control terminal driving circuit. Each of the output cells includes an output transistor. First side electrodes of the output transistors are commonly coupled to a first power source. Each of second side electrodes of the output transistors is coupled to an output terminal through the corresponding bonding wire. The control terminal driving circuit supplies a drive signal to the control terminals of the individual output transistors to control the output transistors. Each of the bonding wires is designed to be fused and cut if the output transistor included in the corresponding output cell fails and is shorted.

Abstract: Provided is an arbitration circuit included in a host controller that can be connected to a plurality of external devices via a plurality of pipe control circuits. The arbitration circuit includes an available state information storage unit that stores available state information. The available state information indicates an available state of the plurality of pipe control circuits and is updated by the pipe control circuit by a unit of data transfer of a predetermined communication size. The arbitration circuit further includes an arbitration unit that refers to the available state information storage unit, selects the arbitrary pipe control circuit from the available pipe control circuit, and allocates the selected pipe control circuit to the external device, while updating the available state information storage unit.

Abstract: To restrain the amount of information to be saved to the minimum necessary and suppress temporal overhead required for save and return when task switching associated with a priority processing request occurs in a signal processing device for performing multitasking on stream data such as image signals, the signal processing device includes a pointer indicating position information of data in stream data according to progress of processing by a signal processing unit. When priority task processing is requested, the signal processing device saves only a pointer value. At the time of return, based on the saved pointer value the signal processing device obtains position information of output stream data to be outputted next in a returned task, obtains position information, in an input stream, of head input data of all input data that needs to be inputted to the signal processing unit to calculate the data, and resumes the processing.

Abstract: The disclosed invention provides a semiconductor device capable of suitably controlling the level of an enable signal to resolve NBTI in a PMOS transistor. An input node receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby. A detection unit receives a signal through the input node and outputs an enable signal. The detection unit sets the enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period. A signal transmission unit includes a P-channel MOS transistor and transmits a signal input to the input node according to control by the enable signal.

Abstract: In a digital control power supply, a mode control unit measures a first frequency and a second frequency for a difference between a second digital value and a target value. Based on the measured first frequency and second frequency and a predetermined threshold set to the first and second frequencies, the mode control unit determines whether an amplification factor for use in amplification processing by an amplifier is maintained at a current amplification factor or is changed to an amplification factor which is larger or smaller by 1 than the current amplification factor. This contributes to an improvement in noise resistance of the digital control power supply and prevents an output voltage from being unstable.

Abstract: A semiconductor device, including a memory cell region and a peripheral circuit region, comprises an insulating film, having an upper surface formed on a major surface of a semiconductor substrate to extend from a memory cell region to a peripheral circuit region thereof. A capacitor lower electrode is formed in the memory cell region to upwardly extend beyond the upper surface of the insulating film on the major surface of the semiconductor substrate. A capacitor upper electrode is formed on the capacitor lower electrode through a dielectric film, to extend onto the upper surface of the insulating film. The capacitor lower electrode includes a capacitor lower electrode part having a top surface and a bottom surface. The upper surface of the insulating film is located between the top and bottom surfaces of the capacitor lower electrode part.

Abstract: A semiconductor device includes: a resistance R whose resistance value varies in response to a substrate temperature variation; a resistance corrector that is coupled in series with the resistance R and switches its resistance value by a preset resistance step width to suppress a resistance value variation of the resistance R; a first voltage generator for generating a first voltage that varies in response to the substrate temperature; a second voltage generator for generating second voltages Vf1 to Vfn?1 for specifying the first voltage at a point when a switching operation of the resistance value of the resistance corrector is performed; and a resistance switch unit for switching the resistance value of the resistance corrector by comparing the first voltage and the second voltages Vf1 to Vfn?1.

Abstract: An ADC includes sampling means for sampling an input voltage signal, comparator(s) for receiving the sampled signal, and a DAC including circuitry for generating a search signal approximating the input signal and a calibration signal. The search signal and the calibration signal are to be applied to a comparator. The ADC also includes a search logic block for receiving a comparator output signal, for providing input to the DAC for generating the search signal, and for producing a digital output signal. Further, the ADC includes a calibration logic block for producing a control signal to control the circuitry of the DAC and including processing means for observing the output signal, for comparing the output signal with a desired output, and for compensating analogue non-idealities of the ADC. The DAC circuitry is adapted for generating the calibration signal in accordance with the control signal and with the sampled input signal.

Abstract: A semiconductor device is provided, in which it becomes easy to reliably couple a plug conductive layer and a wiring layer located over the plug conductive layer to each other and falling of the wiring can be suppressed. The plug conductive layer contacts a source/drain region formed over a major surface of the semiconductor substrate. A contact conductive layer is formed so as to contact both the upper surface and the side surface of the plug conductive layer. Wiring layers are formed over the contact conductive layer so as to be electrically coupled to the contact conductive layer.

Abstract: A semiconductor device for realizing higher-precision noise elimination includes: a decoder which decodes an encoded input signal; a determining unit which determines whether or not a voice signal is included in the input signal; a suppressor which performs a suppressing process for suppressing a noise component included in the input signal on the basis of a result of determination by the determining unit; and a first storage for storing, as a determination criterion value used for the determination, a first criterion value which specifies the proportion of a voice signal with respect to voice distortion noise.

Abstract: A semiconductor device in which misalignment does not cause short-circuiting and inter-wiring capacitance is decreased. Plural wirings are provided in a first interlayer insulating layer. An air gap is made between at least one pair of wirings in the layer. A second interlayer insulating layer lies over the wirings and first interlayer insulating layer. The first bottom face of the second interlayer insulating layer is exposed to the air gap. When a pair of adjacent wirings whose distance is shortest are first wirings, the upper ends of the first interlayer insulating layer between the first wirings are in contact with the first wirings' side faces. The first bottom face is below the first wirings' upper faces. b/a?0.5 holds where a represents the distance between the first wirings and b represents the width of the portion of the first interlayer insulating layer in contact with the first bottom face.

Abstract: Disclosed is a miniaturized semiconductor device having an SOI layer, in which: a silicon layer is formed over a semiconductor substrate via an BOX film; after the silicon layer is patterned by using a nitride film as a mask, an insulating film covering the surface of each of the nitride film, the silicon layer, and the BOX film is formed; subsequently, an opening, which penetrates the insulating film and the BOX film and which exposes the upper surface of the semiconductor substrate, is formed, and an epitaxial layer is formed in the opening; subsequently, the SOI region and a bulk silicon layer are formed over the semiconductor substrate by flattening the upper surface of the epitaxial layer with the use of the nitride film as an etching stopper film.