Abstract: The present disclosure is directed to a semiconductor die with multiple contact pads electrically coupled to a single lead via a single wire, and methods for fabricating the same. In one or more embodiments, multiple contact pads are electrically coupled to each other by a plurality of conductive layers stacked on top of each other. The uppermost conductive layer is then electrically coupled to a single lead via a single wire.

Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.

Abstract: The present disclosure is directed to a die having a metallized sidewall and methods of manufacturing the same. A contiguous metal layer is applied to each edge of a backside of a wafer. The wafer is cut at a base of a plurality of channels formed in the backside to create individual die each having a flange that is part of a sidewall of the die and includes a portion that is covered by the metal layer. When an individual die is coupled to a die pad, a semiconductive glue bonds the metal layer on the sidewall and a backside of the die to the die pad, which decreases the risk of delamination along the sides of the die. The flange also prevents the glue from contacting the active side of the die by acting as a barrier against adhesive creep of the glue up the sidewall of the die.

Abstract: The present disclosure is directed to a lead frame including a die pad with cavities, and methods for attaching a semiconductor die to the lead frame. The cavities allow for additional adhesive to be formed on the die pad at the corners of the semiconductor die, and prevent the additional adhesive from overflowing on to active areas of the semiconductor die.

Abstract: The present disclosure is directed to a leadframe package having leads with protrusions on an underside of the leadframe. The protrusions come in various shapes and sizes. The protrusions extend from a body of encapsulant around the leadframe to couple to surface contacts on a substrate. The protrusions have a recess that is filled with encapsulant. Additionally, the protrusions may be part of the lead or may be a conductive layer on the lead. In some embodiments a die pad of the leadframe supporting a semiconductor die also has a protrusion on the underside of the leadframe. The protrusion on the die pad has a recess that houses an adhesive and at least part of the semiconductor die. The die pad with a protrusion may include anchor locks at the ends of the die pad to couple to the encapsulant.

Abstract: The present disclosure is directed to a flat no-lead semiconductor package with a surfaced mounted structure. An end portion of the surface mounted structure includes a recessed member so that the surface mounted structure is coupled to leads of the flat no-lead semiconductor package through, among others, the sidewalls of the recessed members.

Abstract: A semiconductor package includes a lead frame, a die, a discrete electrical component, and electrical connections. The lead frame includes leads and a die pad. Some of the leads include engraved regions that have recesses therein and the die pad may include an engraved region or multiple engraved regions. Each engraved region is formed to contain and confine a conductive adhesive from flowing over the edges of the engraved leads or the die pad. The boundary confines the conductive adhesive to the appropriate location on the engraved lead or the engraved die pad when being placed on the engraved regions. By utilizing a lead frame with engraved regions, the flow of the conductive adhesive or the wettability of the conductive adhesive can be contained and confined to the appropriate areas of the engraved lead or engraved die pad such that a conductive adhesive does not cause cross-talk between electrical components within a semiconductor package or short circuiting within a semiconductor package.

Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.

Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.

Abstract: The present disclosure is directed to a die having a metallized sidewall and methods of manufacturing the same. A contiguous metal layer is applied to each edge of a backside of a wafer. The wafer is cut at a base of a plurality of channels formed in the backside to create individual die each having a flange that is part of a sidewall of the die and includes a portion that is covered by the metal layer. When an individual die is coupled to a die pad, a semiconductive glue bonds the metal layer on the sidewall and a backside of the die to the die pad, which decreases the risk of delamination along the sides of the die. The flange also prevents the glue from contacting the active side of the die by acting as a barrier against adhesive creep of the glue up the sidewall of the die.

Abstract: The present disclosure is directed to a leadframe package having leads with protrusions on an underside of the leadframe. The protrusions come in various shapes and sizes. The protrusions extend from a body of encapsulant around the leadframe to couple to surface contacts on a substrate. The protrusions have a recess that is filled with encapsulant. Additionally, the protrusions may be part of the lead or may be a conductive layer on the lead. In some embodiments a die pad of the leadframe supporting a semiconductor die also has a protrusion on the underside of the leadframe. The protrusion on the die pad has a recess that houses an adhesive and at least part of the semiconductor die. The die pad with a protrusion may include anchor locks at the ends of the die pad to couple to the encapsulant.

Abstract: The present disclosure is directed to a leadframe having a recess in a body of the leadframe to collect glue overflowing from the manufacturing process of coupling a semiconductor die to the leadframe. The recess extends beneath an edge of the semiconductor die so that any tendency of the glue to adhere to the semiconductor die is counteracted by a tendency of the glue to adhere to a wall of the recess and at least partially fill the volume of the recess. In addition, the recess for collecting adhesive may also form a mold lock on an edge of the leadframe, the mold lock providing a more durable connection between the leadframe and an encapsulant during physical and temperature stresses.

Abstract: A semiconductor package includes a substrate, a die, an insulating die attach film, a dummy die, a conductive layer, and an electrically conductive molding compound or encapsulant. The first surface of the substrate includes a plurality of internal leads, and the second surface of the substrate includes a plurality of external electrically conductive pads and an electrically conductive ground terminal. A non-conductive flow over wire die attach film is placed to surround and encase the die. The dummy die overlies the die and a conductive layer overlies the dummy die. The electrically conductive molding compound is formed to encase the various components of the semiconductor device. The electrically conductive molding compound is electrically coupled to the electrically conductive ground terminal and the conductive layer forming an EMI shield for the die in the package.

Abstract: A method for making shielded integrated circuit (IC) packages includes providing spaced apart IC dies carried by a substrate and covered by a common encapsulating material, and cutting through the common encapsulating material between adjacent IC dies to define spaced apart IC packages carried by the substrate. An electrically conductive layer is positioned over the spaced apart IC packages and fills spaces between adjacent IC packages. The method further includes cutting through the electrically conductive layer between adjacent IC packages and through the substrate to form the shielded IC packages.

Abstract: A method for making shielded integrated circuit (IC) packages includes providing spaced apart IC dies carried by a substrate and covered by a common encapsulating material, and cutting through the common encapsulating material between adjacent IC dies to define spaced apart IC packages carried by the substrate. An electrically conductive layer is positioned over the spaced apart IC packages and fills spaces between adjacent IC packages. The method further includes cutting through the electrically conductive layer between adjacent IC packages and through the substrate to form the shielded IC packages.