Abstract: Methods for forming connectors on die pads at a wafer level of processing include forming spots of a curable electrically conductive material over die pads and extending to or over the interconnect die edge; curing the conductive material; and in a wafer cutting procedure thereafter severing the spots. Also, die pad to z-interconnect connectors formed by the methods, and shaped and dimensioned accordingly. Also, stacked die assemblies and stacked die packages containing die prepared according to the methods and having die pad to z-interconnect connectors formed by the methods and shaped and dimensioned accordingly.

Abstract: A method for making an interposer includes forming a plurality of wire bonds bonded to one or more first surfaces of a first element. A dielectric encapsulation is formed contacting an edge surface of the wire bonds which separates adjacent wire bonds from one another. Further processing comprises removing at least portions of the first element, wherein the interposer has first and second opposite sides separated from one another by at least the encapsulation, and the interposer having first contacts and second contacts at the first and second opposite sides, respectively, for electrical connection with first and second components, respectively, the first contacts being electrically connected with the second contacts through the wire bonds.

Abstract: A microelectronic package may include a substrate having first and second regions, a first surface and a second surface remote from the first surface; at least one microelectronic element overlying the first surface within the first region; electrically conductive elements at the first surface within the second region; a support structure having a third surface and a fourth surface remote from the third surface and overlying the first surface within the second region in which the third surface faces the first surface, second and third electrically conductive elements exposed respectively at the third and fourth surfaces and electrically connected to the conductive elements at the first surface in the first region; and wire bonds defining edge surfaces and having bases electrically connected through ones of the third conductive elements to respective ones of the second conductive elements and ends remote from the support structure and the bases.

Abstract: An apparatus, and methods therefor, relates generally to an integrated circuit package. In such an apparatus, a platform substrate has a copper pad. An integrated circuit die is coupled to the platform substrate. A wire bond wire couples a contact of the integrated circuit die and the copper pad. A first end of the wire bond wire is ball bonded with a ball bond for direct contact with an upper surface of the copper pad. A second end of the wire bond wire is stitch bonded with a stitch bond to the contact.

Abstract: An apparatus relates generally to a microelectromechanical system component. In such an apparatus, the microelectromechanical system component has a lower surface, an upper surface, first side surfaces, and second side surfaces. Surface area of the first side surfaces is greater than surface area of the second side surfaces. The microelectromechanical system component has a plurality of wire bond wires attached to and extending away from a first side surface of the first side surfaces. The wire bond wires are self-supporting and cantilevered with respect to the first side surface of the first side surfaces.

Abstract: In a method for forming a microelectronic device, a substrate is loaded into a mold press. The substrate has a first surface and a second surface. The second surface is placed on an interior lower surface of the mold press. The substrate has a plurality of wire bond wires extending from the first surface toward an interior upper surface of the mold press. An upper surface of a mold film is indexed to the interior upper surface of the mold press. A lower surface of the mold film is punctured with tips of the plurality of wire bond wires for having the tips of the plurality of wire bond wires extending above the lower surface of the mold film into the mold film. The tips of the plurality of wire bond wires are pressed down toward the lower surface of the mold film to bend the tips over.

Abstract: A microelectronic assembly (10) includes a substrate (12) having a first and second opposed surfaces. A microelectronic element (22) overlies the first surface and first electrically conductive elements (28) can be exposed at at least one of the first surface or second surfaces. Some of the first conductive elements (28) are electrically connected to the microelectronic element (22). Wire bonds (32) have bases (34) joined to the conductive elements (28) and end surfaces (38) remote from the substrate and the bases, each wire bond defining an edge surface (37) extending between the base and the end surface. An encapsulation layer (42) can extend from the first surface and fill spaces between the wire bonds, such that the wire bonds can be separated by the encapsulation layer. Unencapsulated portions of the wire bonds (32) are defined by at least portions of the end surfaces (38) of the wire bonds that are uncovered by the encapsulation layer (42).

Abstract: A microelectronic package may include a substrate having first and second regions, a first surface and a second surface remote from the first surface; at least one microelectronic element overlying the first surface within the first region; electrically conductive elements at the first surface within the second region; a support structure having a third surface and a fourth surface remote from the third surface and overlying the first surface within the second region in which the third surface faces the first surface, second and third electrically conductive elements exposed respectively at the third and fourth surfaces and electrically connected to the conductive elements at the first surface in the first region; and wire bonds defining edge surfaces and having bases electrically connected through ones of the third conductive elements to respective ones of the second conductive elements and ends remote from the support structure and the bases.

Abstract: An electrically conductive lead is formed using a bonding tool. After bonding the wire to a metal surface and extending a length of the wire beyond the bonding tool, the wire is clamped. Movement of the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool. A forming element, e.g., an edge or a blade skirt provided at an exterior surface of the bonding tool can help kink the wire. Optionally, twisting the wire while tensioning the wire using the bonding tool can cause the wire to break and define an end. The lead then extends from the metal surface to the end, and may exhibit a sign of the torsional force applied thereto.

Abstract: A microelectronic assembly (10) includes a substrate (12) having a first and second opposed surfaces. A microelectronic element (22) overlies the first surface and first electrically conductive elements (28) can be exposed at at least one of the first surface or second surfaces. Some of the first conductive elements (28) are electrically connected to the microelectronic element (22). Wire bonds (32) have bases (34) joined to the conductive elements (28) and end surfaces (38) remote from the substrate and the bases, each wire bond defining an edge surface (37) extending between the base and the end surface. An encapsulation layer (42) can extend from the first surface and fill spaces between the wire bonds, such that the wire bonds can be separated by the encapsulation layer. Unencapsulated portions of the wire bonds (32) are defined by at least portions of the end surfaces (38) of the wire bonds that are uncovered by the encapsulation layer (42).

Abstract: A method for making an interposer includes forming a plurality of wire bonds bonded to one or more first surfaces of a first element. A dielectric encapsulation is formed contacting an edge surface of the wire bonds which separates adjacent wire bonds from one another. Further processing comprises removing at least portions of the first element, wherein the interposer has first and second opposite sides separated from one another by at least the encapsulation, and the interposer having first contacts and second contacts at the first and second opposite sides, respectively, for electrical connection with first and second components, respectively, the first contacts being electrically connected with the second contacts through the wire bonds.

Abstract: A structure includes a substrate having a first region and a second region, the substrate also having a first surface and a second surface. Electrically conductive elements are exposed at the first surface within the second region. Wire bonds have bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. At least one of the wire bonds has a shape such that the wire bond defines an axis between the free end and the base thereof and such that the wire bond defines a plane. A bent portion of the at least one wire bond extends away from the axis within the plane. A dielectric encapsulation layer covers portions of the wire bonds such that unencapsulated portions, including the ends, of the wire bonds are defined by portions of the wire bonds that are uncovered by the encapsulation layer.

Abstract: Methods for forming connectors on die pads at a wafer level of processing include forming spots of a curable electrically conductive material over die pads and extending to or over the interconnect die edge; curing the conductive material; and in a wafer cutting procedure thereafter severing the spots. Also, die pad to z-interconnect connectors formed by the methods, and shaped and dimensioned accordingly. Also, stacked die assemblies and stacked die packages containing die prepared according to the methods and having die pad to z-interconnect connectors formed by the methods and shaped and dimensioned accordingly.

Abstract: A microelectronic package may include a substrate having first and second regions, a first surface and a second surface remote from the first surface; at least one microelectronic element overlying the first surface within the first region; electrically conductive elements at the first surface within the second region; a support structure having a third surface and a fourth surface remote from the third surface and overlying the first surface within the second region in which the third surface faces the first surface, second and third electrically conductive elements exposed respectively at the third and fourth surfaces and electrically connected to the conductive elements at the first surface in the first region; and wire bonds defining edge surfaces and having bases electrically connected through ones of the third conductive elements to respective ones of the second conductive elements and ends remote from the support structure and the bases.

Abstract: A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

Abstract: Methods for forming connectors on die pads at a wafer level of processing include forming spots of a curable electrically conductive material over die pads and extending to or over the interconnect die edge; curing the conductive material; and in a wafer cutting procedure thereafter severing the spots. Also, die pad to z-interconnect connectors formed by the methods, and shaped and dimensioned accordingly. Also, stacked die assemblies and stacked die packages containing die prepared according to the methods and having die pad to z-interconnect connectors formed by the methods and shaped and dimensioned accordingly.

Abstract: A microelectronic package includes a substrate having a first surface. A microelectronic element overlies the first surface. Electrically conductive elements are exposed at the first surface of the substrate, at least some of which are electrically connected to the microelectronic element. The package includes wire bonds having bases bonded to respective ones of the conductive elements and ends remote from the substrate and remote from the bases. The ends of the wire bonds are defined on tips of the wire bonds, and the wire bonds define respective first diameters between the bases and the tips thereof. The tips have at least one dimension that is smaller than the respective first diameters of the wire bonds. A dielectric encapsulation layer covers portions of the wire bonds, and unencapsulated portions of the wire bonds are defined by portions of the wire bonds, including the ends, are uncovered by the encapsulation layer.

Abstract: A microelectronic package can include wire bonds having bases bonded to respective ones of conductive elements exposed at a surface of a substrate. The wire bonds may have exterior edge surfaces disposed at an angle between 25° and 90° relative to the bases, and ends remote, e.g., opposite, from the bases, and remote from the ends which are connected to the bases. A dielectric encapsulation layer extends from the substrate and covers portions of the wire bonds such that covered portions of the wire bonds are separated from one another by the encapsulation layer, wherein unencapsulated portions of the wire bonds are defined by portions of the wire bonds that are uncovered by the encapsulation layer, the unencapsulated portions including the ends of the wire bonds.

Abstract: A structure may include bond elements having bases joined to conductive elements at a first portion of a first surface and end surfaces remote from the substrate. A dielectric encapsulation element may overlie and extend from the first portion and fill spaces between the bond elements to separate the bond elements from one another. The encapsulation element has a third surface facing away from the first surface. Unencapsulated portions of the bond elements are defined by at least portions of the end surfaces uncovered by the encapsulation element at the third surface. The encapsulation element at least partially defines a second portion of the first surface that is other than the first portion and has an area sized to accommodate an entire area of a microelectronic element. Some conductive elements are at the second portion and configured for connection with such microelectronic element.

Abstract: An electrically conductive lead is formed using a bonding tool. After bonding the wire to a metal surface and extending a length of the wire beyond the bonding tool, the wire is clamped. Movement of the bonding tool imparts a kink to the wire at a location where the wire is fully separated from any metal element other than the bonding tool. A forming element, e.g., an edge or a blade skirt provided at an exterior surface of the bonding tool can help kink the wire. Tensioning the wire using the bonding tool causes the wire to break and define an end. The lead then extends from the metal surface to the end.