Abstract: This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.

Abstract: The present invention relates to using an insulator layer between two metal layers of a semiconductor die to provide a micro-electromechanical systems (MEMS) device, such as an ohmic MEMS switch or a capacitive MEMS switch. In an ohmic MEMS switch, the insulator layer may be used to reduce metal undercutting during fabrication, to prevent electrical shorting of a MEMS actuator to a MEMS cantilever, or both. In a capacitive MEMS switch, the insulator layer may be used as a capacitive dielectric between capacitive plates, which are provided by the two metal layers. A fixed capacitive element may be provided by the insulator layer between the two metal layers. In one embodiment of the present invention, an ohmic MEMS switch, a capacitive MEMS switch, a fixed capacitive element, or any combination thereof may be integrated into a single semiconductor die.

Abstract: This disclosure relates to radio frequency (RF) power converters and methods of operating the same. In one embodiment, an RF power converter includes an RF switching converter, a low-drop out (LDO) regulation circuit, and an RF filter. The RF filter is coupled to receive a pulsed output voltage from the RF switching converter and a supply voltage from the LDO regulation circuit. The RF filter is operable to alternate between a first RF filter topology and a second RF filter topology. In the first RF filter topology, the RF filter is configured to convert the pulsed output voltage from a switching circuit into the supply voltage. The RF filter in the second RF filter topology is configured to filter the supply voltage from the LDO regulation circuit to reduce a ripple variation in a supply voltage level of the supply voltage. As such, the RF filter provides greater versatility.

Abstract: Embodiments of circuitry, which includes power supply switching circuitry, a first inductive element, and a second inductive element, are disclosed. The power supply switching circuitry provides a first switching output signal to the first inductive element and a second switching output signal to the second inductive element. The first inductive element has a first inductor current and the second inductive element has a second inductor current. The second switching output signal is delayed from the first switching output signal by a switching signal delay. The first inductor current and the second inductor current combine to provide a combined inductor current, which has a frequency response with a group of notches, such that frequency locations of the group of notches are based on the switching signal delay.

Abstract: A circuit that includes a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through the input node is disclosed. The circuit has a resistor-inductor-capacitor (RLC) type frequency bias feedback network communicatively coupled between the output transistor and the input node for providing biasing to the Darlington transistor pair as well as for adjusting at least one characteristic of an amplified version of the input signal that passes through the input transistor and into the frequency bias network. The circuit further includes a feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of the amplified version of the input signal that passes through the input transistor.

Abstract: Circuitry, which includes data memory and processing circuitry, is disclosed. The data memory is used to store look-up table (LUT)-based radio frequency (RF) power amplifier (PA) calibration data. The processing circuitry converts at least a portion of the LUT-based RF PA calibration data to provide monotonic response curve-based data. As such, a magnitude of an envelope power supply control signal is determined based on a magnitude of an RF input signal using the monotonic response curve-based data.

Abstract: Multimode radio frequency (RF) amplifier systems and techniques are disclosed. In one embodiment, a multimode radio frequency (RF) amplifier system has a first RF amplifier and a second RF amplifier. The first RF amplifier may support a first RF communication standard. The second RF amplifier may support a second RF communication standard. The first RF amplifier includes an auxiliary circuit. The auxiliary circuit may provide a service or a utility to a second RF amplifier. For example, the auxiliary circuit may generate a supply voltage to power the second RF amplifier.

Abstract: In one embodiment, a temperature compensating attenuator is disclosed having an attenuation circuit and a control circuit. The temperature compensating attenuator circuit may include a first series connected attenuation circuit segment and a shunt connected attenuation circuit segment, as well as additional attenuation circuit segments. Each attenuation circuit segment includes a stack of transistors that are coupled to provide the attenuation circuit segment with an impedance attenuation level having a continuous impedance range. The control circuit may be operably associated with the stack of transistors in each attenuation circuit segment to control the attenuation level of the attenuation circuit. The temperature compensating attenuator includes a temperature compensating circuit that compensates for variations in operation of the attenuation circuit due to a temperature change.

Abstract: The present disclosure relates to a split-band duplexer architecture that takes advantage of a relationship between a frequency division duplex (FDD) transmit band, an FDD receive band, and a time division duplex (TDD) band, which has frequencies located between FDD transmit band frequencies and FDD receive band frequencies. As such, by splitting the FDD receive and transmit bands into two sub-bands, two separate sub-band duplexers may be used to fully support the FDD receive and transmit bands. Further, a passband of one of the sub-band duplexers may be widened to support the TDD band while transmitting, and a passband of the other of the sub-band duplexers may be widened to support the TDD band while receiving. By using sub-band duplexers, isolation margins and insertion loss margins may be increased, which may allow use of standard filter components, such as surface acoustic wave (SAW) filters.

Abstract: In one embodiment, saturation of the control system of a power amplifier is limited by comparing a control voltage at a first control node against a scaled battery voltage, and then drawing an error current away from the first control node when the control voltage exceeds the scaled battery voltage. The first control node may be located after a trans-conductance amplifier in a feedback control system.

Abstract: A floating power converter includes direct current to direct current (DC-DC) converter circuitry having at least one converter control terminal for receiving at least one control signal, a high side (H-S) converter input terminal, a low side (L-S) converter input terminal, and a converter output terminal. The floating power converter also has an H-S source selector configured to selectively couple either a first H-S voltage source or a second H-S voltage source to the H-S converter input terminal in response to a selector control signal. Moreover, an L-S source selector is configured to selectively couple either a first L-S voltage source or a second L-S voltage source to the L-S converter input terminal in response to the selector control signal.

Abstract: In one embodiment, a balanced to unbalanced transformer utilizes a crossover configuration such that some portion of the secondary coil (inductor) is shared between two resonators (capacitors). Adding a first capacitor in parallel with a portion of the secondary inductor creates a first harmonic trap (filter), and also efficiently uses the secondary coil (inductor) as a resonating element. Adding a second capacitor which shares (crossover configuration) a portion of the secondary inductor with the first capacitor creates a second harmonic trap (filter), which may be tuned to the same harmonic as the first harmonic trap, or may be tuned to a different harmonic.

Abstract: This disclosure relates generally to radio frequency (RF) switching converters and RF amplification devices that use RF switching converters. For example, an RF switching converter may include a switching circuit that receives a power source voltage and a switching controller that receives a target average frequency value identifying a target average frequency. The switching circuit is switchable so as to generate a pulsed output voltage from the power source voltage. The switching controller switches the switching circuit such that the pulsed output voltage has an average pulse frequency. The switching controller also detects that the average pulse frequency of the pulsed output voltage during a time period differs from the target average frequency, and reduces a difference between the average pulse frequency and the target average frequency. In this manner, the effects of manufacturing variations and operational variations on the average pulse frequency can be eliminated, or at least diminished.

Abstract: A direct current (DC)-DC converter, which includes a parallel amplifier and a switching supply, is disclosed. The switching supply includes switching circuitry, a first inductive element, and a second inductive element. The parallel amplifier has a feedback input and a parallel amplifier output. The switching circuitry has a switching circuitry output. The first inductive element is coupled between the switching circuitry output and the feedback input. The second inductive element is coupled between the feedback input and the parallel amplifier output.

Abstract: This disclosure relates generally to radio frequency (RF) switching converters and RF amplification devices that use RF switching converters. In one embodiment, an RF switching converter includes a switching circuit operable to receive a power source voltage, a switching controller configured to switch the switching circuit so that the switching circuit generates a pulsed output voltage from the power source voltage, and an RF filter configured to convert the pulsed output voltage into a supply voltage, wherein the RF filter includes a decoupling capacitor configured to receive the supply voltage. The switching controller is configured to generate a ripple correction current that is injected into the decoupling capacitor such that the decoupling capacitor filters the ripple correction current. The decoupling capacitor outputs the ripple correction current such that the ripple correction current reduces a ripple variation in a supply current level of a supply current resulting from the supply voltage.

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Abstract: This application reduces the power of series combined transformers and of parallel combined transformers while maintaining efficiency. In one embodiment, a series combined transformer is provided with a switch between a first primary inductor and a second primary inductor, in order to provide at least two modes. In a high power mode, the switch is open and the series combined transformer operates normally. In a low power mode, the switch is closed, one amplifier from a first differential amplifier pair is shut down, one amplifier from a second differential pair is shut down, and the series combined transformer operates efficiently in a low power mode.

Abstract: A differential voltage controlled current source generating one or more output currents is based upon a single external resistor. The differential voltage controlled current source may generate an output current that is proportional to a received differential voltage and a bias current with the use of a single external resistor. The technique may be used to generate multiple accurate and process independent current sources. The current sources may be a zero temperature coefficient (ZTC) current, a proportional to absolute temperature (PTAT) current, or an inversely proportional to absolute temperature (NTAT) current. The output of the current sources may be inversely proportional to the resistance of the external resistor.

Abstract: A first radio frequency (RF) power amplifier (PA) stage, a second RF PA stage, and an alpha RF switch are disclosed. The first RF PA stage provides a first RF output signal. During a first alpha mode, the alpha RF switch forwards the first RF output signal to the second RF PA stage, such that the first RF PA stage functions as a driver stage and the second RF PA stage functions as a final stage. However, during one of a group of alpha modes, the alpha RF switch forwards the first RF output signal to provide a corresponding one of a group of alpha transmit signals, such that the first RF PA stage functions as a final stage. Further, the first alpha mode is not one of the group of alpha modes.

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.