Abstract: An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor (13 and 14) is switched to ground (9) or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma (5) prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system (22) in the power source (1).

Abstract: Various embodiments of a power supply are disclosed for generating plasmas. Current controlled power sources are disclosed that are capable of generating currents in low resistance, high temperature plasmas that are regulated to prevent the generation of excessive currents in the plasma. Current reversing switches are provided that control the flow of a direct current in a plasma chamber between various electrodes. A single current controlled power source capable of providing a substantially constant direct current can be utilized with various switch configurations to provide current that is delivered through three or more electrodes in a plasma chamber. Multiple power sources are also provided in association with shunt switches for delivering a plurality of sources of direct current in various directions between electrodes in a plasma chamber.

Abstract: A method and an apparatus are disclosed for sputter deposition of an insulating material on a substrate in a continuous mode of operation. A novel design for an anode assembly and driving power supply is disclosed to permit this. Single or multiple anodes are used, which at any given time may be biased negatively with respect to the plasma, so that any insulating material which may have been deposited thereupon may be sputtered away so as to provide a clean positive anode to the system, and at least for some period of time is biased positively so that it acts as an anode. The removal of any insulating material which may have formed on the anode structure permits its continuing effective use in collecting electrons from the plasma when it is biased positively, and therefore its continuing effective use as an anode for the system, permitting continuous operation of the system.

Abstract: An enhanced DC plasma processing system which acts to immediately stop current from flowing through the plasma allows a variety of alternative embodiments for varying applications. In one embodiment, a tapped inductor is switched to ground to achieve substantial voltage reversal of about 10% upon detection of an arc condition through voltage and/or rate of voltage change techniques. This reversal of voltage is maintained long enough to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically applying a reverse voltage is effected through a timer system in the power supply.

Abstract: An enhanced reactive plasma processing method and system useful for deposition of highly insulating films. A variety of alternative embodiments are allowed for varying applications. In one embodiment, a tapped inductor is switched to ground or some common level to achieve substantial voltage reversal of about 10% upon detection of an arc condition. This reversal of voltage is maintained long enough to either afford processing advantages or to allow restoration of uniform charge density within the plasma prior to restoration of the initial driving condition. A technique for preventing arc discharges involving periodically either interrupting the supply of power or reversing voltage is effected through a timer system in the power source.

Abstract: A medium for irreversible information storage by locally changing the electrical conductivity of a carrier whose discrete areas of electrical conductivity have been produced by means of polymeric systems which contain conjugated double bonds and are formed by a field-chemical reaction, and a method for carrying out this information storage.

Abstract: A thermocouple pressure gauging system for measuring partial vacuum is provided which uses AC current to heat the thermocouple to constant temperature. A signal proportional to pressure is derived from the AC current needed to heat to constant temperature.

Abstract: The circumference of a crystal rod is monitored and controlled during the rod growing process by providing relative rotation between the growing crystal rod and a melt of the crystal material as the rod is being pulled from the melt according to the Czochralski method, and by using a radiation-sensitive control system for adjusting growth conditions of the rod in response to variations in a radiation signal which is indicative of the circumferential dimension of the rod. An electronic circuit integrates the radiation signal over each complete rotation of the rod, thereby eliminating unnecessary adjustment of the growth conditions in response to diametric variations of the rod which recur regularly in each rotation.

Abstract: The circumference of a crystal rod is monitored and controlled during the rod growing process by providing relative rotation between the growing crystal rod and a melt of the crystal material as the rod is being pulled from the melt according to the Czochralski method, and by using a radiation-sensitive control system for adjusting growth conditions of the rod in response to variations in a radiation signal which is indicative of the circumferential dimension of the rod. An electronic circuit integrates the radiation signal over each complete rotation of the rod, thereby eliminating unnecessary adjustment of the growth conditions in response to diametric variations of the rod which recur regularly in each rotation.