Abstract: An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattern or other single-layer sensor pattern, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.

Abstract: A low-leakage, high-dynamic range active pixel sensor is formed on a p-type semiconductor substrate. A photodiode cathode n-type region is disposed within the semiconductor substrate forming a pn junction with the semiconductor substrate. An n-well is disposed in the semiconductor substrate and in electrical contact with the photodiode cathode n-type region. An annular p-well in the semiconductor substrate is disposed around and spaced apart from the n-well. An annular polysilicon gate region forming a gate for a reset transistor is disposed over a thick gate dielectric on the surface of the semiconductor substrate. An annular n-type region is disposed within and inward from an inner periphery of the annular p-well and has inner edges substantially aligned with an outer periphery of the annular polysilicon gate region. The annular n-type region forms a drain for the reset transistor. A surface n-type region is disposed in the n-well at the surface of the semiconductor substrate.

Abstract: Vertical-color-filter pixel sensors having simplified wiring and reduced transistor counts are disclosed. In an embodiment, a single line is used for reference voltage, pixel reset voltage, and column-output signals in a VCF pixel sensor. In another embodiment, row-reset signals and row-enable signals are sent across a line that is shared between adjacent rows in an array of VCF pixel sensors. The present invention also provides an optimized layout for a VCF pixel sensor with shared row-reset, row-enable, reference voltage and column-output lines as well as a VCF pixel sensor in which source-follower voltage, source-follower amplifier voltage and row-enable signals all share a common line. These combined line embodiments can be used with a single column-output line as well as two row-enable lines. The embodiments can also be implemented in a VCF pixel sensor without a row-enable transistor.

Abstract: A CMOS active pixel sensor with noise reduction employs a photodetector. A reset switch is coupled between a reset potential line and the photodetector and is controlled by a reset line. An amplifier is coupled to the photodetector. A kTC noise reducing circuit is disposed within the pixel sensor. A readout circuit is coupled to the kTC noise reducing circuit and is controlled by a row-select line.

Abstract: A current sensing method and circuit for reading out a sensor cell, and a sensing apparatus comprising an array of sensor cells arranged along column lines and a current sensing readout circuit coupled to each column line. The sensor cell is configured to assert a sensor current indicative of a sensed value. In operation, an input node of the readout circuit is coupled to the sensor cell, typically by a column line of a sensor array that includes the sensor cell. Preferably, to read out the sensor cell, the sensor current flows from the sensor cell to the input node and in response, the readout circuit charges a capacitor to a voltage indicative of the sensed value while clamping the input node at a potential that is at least substantially fixed.

Abstract: A method for storing a full Red, Green, Blue (RGB) data set. A full RGB data set is three-color image data captured with an imager array formed on a semiconductor substrate and comprising a plurality of vertical-color-filter detector groups. Each of the vertical color detector groups comprises three detector layers each configured to collect photo-generated carriers of a first polarity, separated by intervening reference layers configured to collect and conduct away photo-generated carriers of opposite polarity, the three detector layers being disposed substantially in vertical alignment with respect to one another and having different spectral sensitivities. The three-color image data is then stored as digital data in a digital storage device without performing interpolation on the three-color image data.

Abstract: A vertical-color-filter detector group comprises a semiconductor body including a plurality of alternating silicon layers of first and second conductivity types, the second conductivity type being opposite that of the first conductivity type, formed over a substrate of the first conductivity type. Each of the layers of the second conductivity type are disposed at a depth from an upper surface of the silicon body selected to preferentially absorb radiation of a selected color, there being at least first and second layers of the second conductivity type. First and second conductive contacts extend, respectively, from the first and second layers of the second conductivity type to the upper surface of the silicon body. A peripheral isolation trench defines a perimeter of the detector group.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, each having a different spectral response. At least one of the sensors includes at least one layer of a semiconductor material other than crystalline silicon (for example, silicon carbide, or InxGa1-xN, or another III-V semiconductor material, or polysilicon, or amorphous silicon). Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof.

Abstract: Leakage of a single-poly EPROM cell is prevented by eliminating field oxide isolating the source, channel, and drain from the control gate n-well, and by replacing field oxide surrounding the cell with a heavily doped surface isolation region. The EPROM cell also utilizes a floating gate having an open-rectangular floating gate portion over the control gate region, and a narrow floating gate portion over the channel and intervening silicon substrate. The surface area of the open-rectangular floating gate portion ensures a high coupling ratio with the control gate region. The small width of the narrow floating gate portion prevents formation of a sizeable leakage path between the n-well and the source, channel, and drain. To conserve surface area, the EPROM cell also eliminates the p+ contact region and the PLDD region in the control gate well of the conventional EPROM design.

Abstract: A vertical color filter sensor group, formed on a substrate (preferably a semiconductor substrate) by a semiconductor integrated circuit fabrication process, and including at least two vertically stacked, photosensitive sensors. Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof. In some embodiments, the sensor group is a block of solid material having a readout surface. At least two vertically stacked sensors are formed in the block and a trench contact is provided between one of the sensors and the readout surface.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photodiode having a first terminal coupled to a first potential and a second terminal. A barrier transistor has a first terminal coupled to the second terminal of the photodiode, a second terminal and a control gate coupled to a barrier set voltage. A reset transistor has a first terminal coupled to the second terminal of the barrier transistor, a second terminal coupled to a reset reference potential that reverse biases the photodiode, and a control gate coupled to a source of a RESET signal. A photocharge integration node is coupled to said second terminal of said barrier transistor. The photocharge integration node comprises the control gate of a first source-follower transistor. The first source-follower transistor is coupled to a source of bias current and has an output.

Abstract: A vertical color detector group according to the present invention is formed on a semiconductor substrate and includes layers for collecting photons of different wavelength bands. The color detector group can be programmed to perform dynamic switching between sub-sampled color data and full measured color readout. The color detector group can also be configured in a portion of an array to emulate color filter array patterns, and programmed to dynamically alter the degree to which color information is sub-sampled. The programmable color detector groups can allow for switching between different levels of quality and resolution, allowing for selection of an optimal pattern based on image content or lighting conditions. By combining the color detector group of the present invention with conventional color filters, color filter arrays of more than three colors can be constructed.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: A method for controlling the exposure of an active pixel array electronic still camera includes the steps of: integrating photocurrent in each pixel during an integration time period; collecting overflow charge from all pixels in the array during the integration time period; developing an overflow signal as a function of the overflow charge; and terminating the integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level.

Abstract: A double-slope MOS active pixel sensor disposed on a semiconductor substrate has a first light-to-output-voltage transfer gain up to a first charge accumulation threshold, has a second light-to-output-voltage transfer gain lower than the first light-to-output-voltage transfer gain above the light accumulation threshold, and comprises first and second photodiodes each having a first terminal coupled to a fixed potential and a second terminal. The second photodiode is smaller than the first photodiode. First and second semiconductor reset switches each have a first terminal coupled respectively to the second terminal of the first and second photodiodes and a second terminal coupled respectively to first and second reset potentials that reverse bias the photodiodes. First and second semiconductor amplifiers each have an input coupled respectively to the second terminals of the first and second photodiodes and have their outputs coupled together.

Abstract: Vertical-color-filter pixel sensors having simplified wiring and reduced transistor counts are disclosed. In an embodiment, a single line is used for reference voltage, pixel reset voltage, and column-output signals in a VCF pixel sensor. In another embodiment, row-reset signals and row-enable signals are sent across a line that is shared between adjacent rows in an array of VCF pixel sensors. The present invention also provides an optimized layout for a VCF pixel sensor with shared row-reset, row-enable, reference voltage and column-output lines as well as a VCF pixel sensor in which source-follower voltage, source-follower amplifier voltage and row-enable signals all share a common line. These combined line embodiments can be used with a single column-output line as well as two row-enable lines. The embodiments can also be implemented in a VCF pixel sensor without a row-enable transistor.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, each having a different spectral response. At least one of the sensors includes at least one layer of a semiconductor material other than crystalline silicon (for example, silicon carbide, or InxGa1-xN, or another III-V semiconductor material, or polysilicon, or amorphous silicon). Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof.

Abstract: An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattern or other single-layer sensor pattern, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: A vertical color filter sensor group, formed on a substrate (preferably a semiconductor substrate) by a semiconductor integrated circuit fabrication process, and including at least two vertically stacked, photosensitive sensors. Other aspects of the invention are arrays of such vertical color filter sensor groups, and methods for fabricating such vertical color filter sensor groups and arrays thereof. In some embodiments, the sensor group is a block of solid material having a readout surface. At least two vertically stacked sensors are formed in the block and a trench contact is provided between one of the sensors and the readout surface.