Abstract: A vertical color detector group according to the present invention is formed on a semiconductor substrate and includes layers for collecting photons of different wavelength bands. The color detector group can be programmed to perform dynamic switching between sub-sampled color data and full measured color readout. The color detector group can also be configured in a portion of an array to emulate color filter array patterns, and programmed to dynamically alter the degree to which color information is sub-sampled. The programmable color detector groups can allow for switching between different levels of quality and resolution, allowing for selection of an optimal pattern based on image content or lighting conditions. By combining the color detector group of the present invention with conventional color filters, color filter arrays of more than three colors can be constructed.

Abstract: An electronic view camera integrates a camera head assembly and laptop computer into a tripod mountable unified structure. The rigid frame, that unifies the camera head and computer, accommodates a choice of laptop type computers from a variety of different manufacturers. The open front, back and side design of the rigid frame permits ready access for electrical connections and for access to removable storage devices, keyboard, and pointing device. The computer LCD acts as a large screen viewfinder for the camera and has the “feel” of a professional type view camera rather than the “feel” of a computer system with a photographic peripheral.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: A method for controlling the exposure of an active pixel array electronic still camera includes the steps of: integrating photocurrent in each pixel during an integration time period; collecting overflow charge from all pixels in the array during the integration time period; developing an overflow signal as a function of the overflow charge; and terminating the integration time period when the overflow signal exceeds a preset threshold level selected to represent a desired reference exposure level.

Abstract: A corrector optic is provided, for use in a camera system that includes a thick prism in front of the focal plane. The corrector optic includes preferably two lenses to be aligned on the optical axis of the camera system. When coupled within the camera system, the corrector optic is disposed between the objective lens and the prism. A preferred corrector optic includes a positive lens having a convex surface facing the objective lens and a negative lens having a concave surface facing the prism, such that the lenses together reduce spherical and coma aberrations caused by imaging through the prism. Chromatic aberration is also reduced by choosing the negative lens material to have a higher index of refraction and higher dispersion than those of the positive lens material.

Abstract: An image sensor includes a plurality of active pixel sensors arranged in an array. Each active pixel sensor includes a photosensor that generates a sensor signal nominally indicative of an intensity of light incident on the photosensor and a follower-type amplifier that couples the sensor signal to an output of the active pixel sensor to provide a buffered sensor signal. A column line is provided for each column in the array, and each column line is coupled to the output of the active pixel sensors associated with that column.

Abstract: An array of vertical color filter (VCF) sensor groups, each VCF sensor group including at least two vertically stacked, photosensitive sensors. Preferably, the array is fabricated, or the readout circuitry is configured (or has a state in which it is configured), to combine the outputs of sensors of multiple sensor groups such that the array emulates a conventional array of single-layer sensors arranged in a Bayer pattern or other single-layer sensor pattern, and such that the outputs of at least substantially all of the sensors of each of the VCF sensor groups are utilized to emulate the array of single-layer sensors.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least one sensor of the group has substantially larger area, projected in a plane perpendicular to a normal axis defined by a top surface of a top sensor of the group, than does each minimum-sized carrier-collection element of the group. In some embodiments, the array includes at least two sensor groups that share at least one carrier-collection element. Optionally, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor of the group.

Abstract: A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors. In preferred embodiments, the sensor group includes at least one filter positioned relative to the sensors such that radiation that has propagated through or reflected from the filter will propagate into at least one sensor. Preferably, the filter is or includes a layer that has been integrated with the sensors by a semiconductor integrated circuit fabrication process. In other embodiments, the sensor group includes a micro-lens. Other aspects of the invention are arrays of vertical color filter sensor groups, some or all of which include at least one filter or micro-lens, and methods for fabricating vertical color filter sensor groups and arrays thereof.

Abstract: An integrated active pixel sensor array arranged in a plurality of rows and columns comprises a saturation level line coupled to a source of saturation level control voltage, a global current-summing node.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a capacitive storage element having a first terminal connected to a fixed potential and a second terminal. A photodiode has an anode connected to a first potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the second terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch.

Abstract: A method for storing digital information from an image sensor comprises the steps of providing an image sensor producing three-color output data at each of a plurality of pixel locations; providing a digital storage device coupled to the image sensor; sensing three-color digital output data from the image sensor; and storing said three-color output data as digital data in the digital storage device without performing any interpolation on the three-color output data. The data may be compressed prior to storage and expanded after retrieval from storage. In a preferred embodiment, the image sensor comprises a triple-junction active pixel sensor array.

Abstract: A storage pixel sensor comprises a photosensor selectively connectable to a reset potential; a switched buffer amplifier having a control terminal coupled to said photosensor, a first terminal connected to a source of a transfer signal, and a second terminal; a storage capacitor coupled to said second terminal of said switched buffer amplifier; and an amplifier coupled to said storage capacitor.

Abstract: An active pixel sensor is disposed on a semiconductor substrate of a first conductivity type, and comprises a plurality of semiconductor regions disposed in the substrate, each successive one of the semiconductor regions and alternating between the first conductivity type and a second conductivity type opposite to that of the first conductivity type being enclosed entirely within another enclosing one of the semiconductor regions. A first enclosing one of the semiconductor regions containing all other ones of the semiconductor regions is of the second conductivity type. A plurality of reset switches each has a first terminal coupled to a different one of the alternating semiconductor regions, and a second terminal switchably coupled to a reset potential. Each one of a plurality of storage nodes is coupled to a separate one of the plurality of alternating semiconductor regions.

Abstract: An image sensor includes a plurality of active pixel sensors arranged in an array. Each active pixel sensor includes a photosensor that generates a sensor signal nominally indicative of an intensity of light incident on the photosensor and a follower-type amplifier that couples the sensor signal to an output of the active pixel sensor to provide a buffered sensor signal. A column line is provided for each column in the array, and each column line is coupled to the output of the active pixel sensors associated with that column.

Abstract: An active pixel sensor is disposed on a semiconductor substrate of a first conductivity type, and comprises a plurality of semiconductor regions disposed in the substrate, each successive one of the semiconductor regions being enclosed entirely within another enclosing one of the semiconductor regions. The plurality of semiconductor regions alternates between the first conductivity type and a second conductivity type opposite to that of the first conductivity type. A first enclosing one of the semiconductor regions containing all other ones of the semiconductor regions is of the second conductivity type, such that a plurality of series-connected photodiodes is formed between the substrate and an innermost enclosed one of the semiconductor regions. A plurality of reset switches each has a first terminal coupled to a different one of the alternating semiconductor regions, and a second terminal switchably coupled to a reset potential.

Abstract: A digital pixel sensor is formed on a semiconductor substrate and comprises a phototransducer responsive to light for providing an analog output signal that is a function of an incident amount of light. A comparator is configured to compare the analog output signal and a ramp reference signal. A plurality of n DRAM cells are configured to store an at least n-bit digital signal in response to the output of the comparator. An array of digital pixel sensors is also disclosed.

Abstract: A system operates on a computing resource that is accessible to a plurality of clients via a communication network. A storage service of the system operates on the computing resource and is configured to store unrendered image data corresponding to scenes. The unrendered image data may be, for example, raw image data or scene colorimetric data. A rendering service of the system also operates on the computing resource and is configured to process the unrendered image data to generate rendered images. In particular, the rendering service processes the unrendered image data responsive to requests from the clients communicated over the communication network, and the rendering processing is based on rendering parameters determined in accordance with the client requests. In addition, a printing service may be provided to transform the rendered images into a tangible form, in accordance with printing requests from the clients.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-voltage gain function. An amplifier has an input coupled to the nonlinear capacitor and an output. Other, non-capacitive elements may be employed to produce a compressive photo-charge-to-voltage gain having at least one breakpoint.

Abstract: A scanning circuit for use with an active pixel sensor array comprises a row-address generator configured to start at a selected row-start address, stop at a selected row-stop address, and increment row addresses by a factor K. A column-address generator is configured to start at a selected column-start address, stop at a selected column stop address, and increment column addresses by a factor K. Circuitry is coupled to the row address generator and the column address generator, for storing the row-start address, the row-stop address, the column-start address, the column-stop address and the factor K. A row decoder is coupled to the row-address generator and a column selector is coupled to the column-address generator. A plurality of row select lines are coupled to the row decoder, each one of the row select lines associated with a different row in the active pixel sensor array.