Patents by Inventor Richard Holscher
Richard Holscher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9240427Abstract: An electronic imager includes a pixel sensor array, a plurality elements of a color filter array containing pigments forming multiple color filter patterns on the pixel sensor array and a silylating agent formed between at least first and second elements of the multiple color filter patterns. A method for forming a color filter array on a pixel sensor array of an electronic imager includes forming a pixel sensor array on a substrate, forming a first color filter pattern on the pixel sensor array, depositing a silylating agent on the first color filter pattern, disposing elements of a second color filter pattern on the silylating agent between respective elements of the first color filter pattern and disposing elements of a third color filter pattern on the silylating agent between respective elements of the first color filter pattern.Type: GrantFiled: September 1, 2011Date of Patent: January 19, 2016Assignee: Semiconductor Components Industries, LLCInventors: Brian Vaartstra, Richard Holscher
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Patent number: 9172892Abstract: An image sensor may have an array of image sensor pixels having varying light collecting areas. The light collecting area of each image pixel may vary with respect to other image pixels due to varied microlens sizes and varied color filter element sizes throughout the array. The light collecting area may vary within unit pixel cells and the variability of the light collecting areas of pixels within each pixel cell may depend on the location of the pixel cell in the pixel array. Each unit pixel cell may include at least one clear pixel having a light collecting area that is smaller than the light collecting areas of other single color pixels in the unit pixel cell.Type: GrantFiled: July 26, 2013Date of Patent: October 27, 2015Assignee: Semiconductor Components Industries, LLCInventors: Alexandre G. Dokoutchaev, Richard Holscher, Jeffrey Mackey, Gershon Rosenblum, Gennadiy Agranov
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Patent number: 8878969Abstract: An image sensor may be provided in which a pixel array includes imaging pixels and application-specific pixels. The application-specific pixels may include depth-sensing pixels, infrared imaging pixels, or other types of application-specific pixels. A color filter array may be formed over the pixel array. The color filter array may include Bayer color filter array formed over the imaging pixels. The color filter array may also include a plurality of green color filter elements formed over the application-specific pixels. Barrier structures may be interposed between imaging pixels and application-specific pixels. The barrier structures may be configured to reduce or eliminate optical crosstalk between imaging pixels and adjacent application-specific pixels. The barrier structures may include an opaque photodefinable material such as black or blue photodefinable material that may be configured to filter out wavelength bands of interest.Type: GrantFiled: July 16, 2012Date of Patent: November 4, 2014Assignee: Aptina Imaging CorporationInventors: Richard Holscher, Gennadiy Agranov, Dongqing Cao
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Publication number: 20140078366Abstract: An image sensor may have an array of image sensor pixels having varying light collecting areas. The light collecting area of each image pixel may vary with respect to other image pixels due to varied microlens sizes and varied color filter element sizes throughout the array. The light collecting area may vary within unit pixel cells and the variability of the light collecting areas of pixels within each pixel cell may depend on the location of the pixel cell in the pixel array. Each unit pixel cell may include at least one clear pixel having a light collecting area that is smaller than the light collecting areas of other single color pixels in the unit pixel cell.Type: ApplicationFiled: July 26, 2013Publication date: March 20, 2014Applicant: Aptina Imaging CorporationInventors: Alexandre G. Dokoutchaev, Richard Holscher, Jeffrey Mackey, Gershon Rosenblum, Gennadiy Agranov
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Publication number: 20130027577Abstract: An image sensor may be provided in which a pixel array includes imaging pixels and application-specific pixels. The application-specific pixels may include depth-sensing pixels, infrared imaging pixels, or other types of application-specific pixels. A color filter array may be formed over the pixel array. The color filter array may include Bayer color filter array formed over the imaging pixels. The color filter array may also include a plurality of green color filter elements formed over the application-specific pixels. Barrier structures may be interposed between imaging pixels and application-specific pixels. The barrier structures may be configured to reduce or eliminate optical crosstalk between imaging pixels and adjacent application-specific pixels. The barrier structures may include an opaque photodefinable material such as black or blue photodefinable material that may be configured to filter out wavelength bands of interest.Type: ApplicationFiled: July 16, 2012Publication date: January 31, 2013Inventors: Richard Holscher, Gennadly Agranov, Dongqing Cao
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Publication number: 20120273905Abstract: An electronic imager includes a pixel sensor array, a plurality elements of a color filter array containing pigments forming multiple color filter patterns on the pixel sensor array and a silylating agent formed between at least first and second elements of the multiple color filter patterns. A method for forming a color filter array on a pixel sensor array of an electronic imager includes forming a pixel sensor array on a substrate, forming a first color filter pattern on the pixel sensor array, depositing a silylating agent on the first color filter pattern, disposing elements of a second color filter pattern on the silylating agent between respective elements of the first color filter pattern and disposing elements of a third color filter pattern on the silylating agent between respective elements of the first color filter pattern.Type: ApplicationFiled: September 1, 2011Publication date: November 1, 2012Applicant: Aptina Imaging CorporationInventors: Brian Vaartstra, Richard Holscher
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Patent number: 7825443Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: GrantFiled: August 29, 2005Date of Patent: November 2, 2010Assignee: Micron Technology, Inc.Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Patent number: 7804115Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: GrantFiled: July 7, 2006Date of Patent: September 28, 2010Assignee: Micron Technology, Inc.Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Publication number: 20090294878Abstract: The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact with the metal silicide layer. The present invention also includes a gate stack which encompasses a polysilicon layer over a substrate, a metal silicide layer over the polysilicon layer, an antireflective material layer over the metal silicide layer, a silicon nitride layer over the antireflective material layer, and a layer of photoresist over the silicon nitride layer, for photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist and transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer. The patterned silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer encompass a gate stack.Type: ApplicationFiled: August 7, 2009Publication date: December 3, 2009Inventors: Zhiping Yin, Ravi Iyer, Thomas R. Glass, Richard Holscher, Ardavan Niroomand, Linda K. Somerville, Gurtej S. Sandhu
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Patent number: 7626238Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: GrantFiled: August 31, 2005Date of Patent: December 1, 2009Assignee: Micron Technology, Inc.Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Patent number: 7576400Abstract: The present invention includes semiconductor circuitry. Such circuitry encompasses a metal silicide layer over a substrate and a layer comprising silicon, nitrogen and oxygen in physical contact with the metal silicide layer. The present invention also includes a gate stack which encompasses a polysilicon layer over a substrate, a metal silicide layer over the polysilicon layer, an antireflective material layer over the metal silicide layer, a silicon nitride layer over the antireflective material layer, and a layer of photoresist over the silicon nitride layer, for photolithographically patterning the layer of photoresist to form a patterned masking layer from the layer of photoresist and transferring a pattern from the patterned masking layer to the silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer. The patterned silicon nitride layer, antireflective material layer, metal silicide layer and polysilicon layer encompass a gate stack.Type: GrantFiled: April 26, 2000Date of Patent: August 18, 2009Assignee: Micron Technology, Inc.Inventors: Zhiping Yin, Ravi Iyer, Thomas R. Glass, Richard Holscher, Ardavan Niroomand, Linda K. Somerville, Gurtej S. Sandhu
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Publication number: 20070238034Abstract: A method and apparatus are disclosed which provide a color filter array for an imaging device in which the filters of the array are accurately positioned through the use of a patterned mask layer used to form filters for one color of the array. Additionally or alternatively, the color filter array can have a light blocking spacer to block light from being transmitted between color filters and/or to a peripheral circuitry region.Type: ApplicationFiled: April 7, 2006Publication date: October 11, 2007Inventor: Richard Holscher
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Publication number: 20070238207Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: ApplicationFiled: September 6, 2005Publication date: October 11, 2007Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Publication number: 20070238035Abstract: An apparatus and method to provide an imager having an array of color filter elements, each color filter element being separated from each other by spacers. The spacers can optically isolate filter elements from each other.Type: ApplicationFiled: April 7, 2006Publication date: October 11, 2007Inventors: Richard Holscher, Ulrich Boettiger
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Publication number: 20060269699Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: ApplicationFiled: July 7, 2006Publication date: November 30, 2006Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Publication number: 20060220186Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: ApplicationFiled: August 29, 2005Publication date: October 5, 2006Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Publication number: 20060038262Abstract: In one aspect, the invention includes a semiconductor processing method. An antireflective material layer is formed over a substrate. At least a portion of the antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. The layer of photoresist is patterned. A portion of the antireflective material layer unmasked by the patterned layer of photoresist is removed. In another aspect, the invention includes the following semiconductor processing. An antireflective material layer is formed over a substrate. The antireflective material layer is annealed at a temperature of greater than about 400° C. A layer of photoresist is formed over the annealed antireflective material layer. Portions of the layer of photoresist are exposed to radiation waves. Some of the radiation waves are absorbed by the antireflective material during the exposing.Type: ApplicationFiled: August 31, 2005Publication date: February 23, 2006Inventors: Richard Holscher, Zhiping Yin, Tom Glass
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Publication number: 20060009042Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.Type: ApplicationFiled: August 31, 2005Publication date: January 12, 2006Inventors: Brett Busch, Luan Tran, Ardavan Niroomand, Fred Fishburn, Yoshiki Hishiro, Ulrich Boettiger, Richard Holscher
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Publication number: 20050269620Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.Type: ApplicationFiled: July 22, 2005Publication date: December 8, 2005Inventors: Brett Busch, Luan Tran, Ardavan Niroomand, Fred Fishburn, Richard Holscher
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Publication number: 20050186802Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.Type: ApplicationFiled: February 20, 2004Publication date: August 25, 2005Inventors: Brett Busch, Luan Tran, Ardavan Niroomand, Fred Fishburn, Yoshiki Hishiro, Ulrich Boettiger, Richard Holscher