Abstract: A method for deicing an aerostructure includes driving a sensing current through a heater element coated to an aerostructure, the heater element having a resistance that is temperature dependent. A resistance of the heater element is monitored. It is determined whether there is icing at the heater element using the monitored resistance of the heater element. A melting current is driven through the heater element when it is determined that there is icing at the heater element.

Abstract: A method for deicing an aerostructure includes driving a sensing current through a heater element coated to an aerostructure, the heater element having a resistance that is temperature dependent. A resistance of the heater element is monitored. It is determined whether there is icing at the heater element using the monitored resistance of the heater element. A melting current is driven through the heater element when it is determined that there is icing at the heater element.

Abstract: A structural capacitor includes a first carbon fiber material layer, a second carbon fiber material layer, and an interlayer dielectric including a diamond-like-carbon material layer.

Abstract: A structural capacitor includes a first carbon fiber material layer, a second carbon fiber material layer, and an interlayer dielectric including a diamond-like-carbon material layer.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A thermocouple disposed on a substrate comprises a first leg of thermoelectric material, a second leg of thermoelectric material, and a thermocouple junction electrically connecting the first leg and the second leg, wherein a height of the thermocouple junction is substantially a height of the first or second legs.

Abstract: A thermocouple disposed on a substrate comprises a first leg of thermoelectric material, a second leg of thermoelectric material, and a thermocouple junction electrically connecting the first leg and the second leg, wherein a height of the thermocouple junction is substantially a height of the first or second legs.

Abstract: Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions.

Abstract: A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.

Abstract: Disclosed is a process for making a flexible magnet with an induced anisotropy, and in particular to a process for making a flexible anisotropic magnet by thermal spraying in the presence of an applied magnetic field. The method may be used to fabricate a substrate having a flexible anisotropic magnetic coating or a free standing anisotropic flexible magnet.

Abstract: A giant magnetoresistance (GMR) sensor is formed using a self organizing diblock copolymer as an etching mask. The diblock copolymer is deposited over a magnetic layer and is self organized into regions of two discrete thicknesses; higher thickness island regions separated by lower thickness valley regions. After the diblock layer is self organized, an etching of process is performed to remove the polymer material from the valley regions as well as the underlying magnetic material. After etching, a patterned magnetic thin film of submicron islands of magnetic material, preferably having a diameter in the single domain range, remain under the mesa region. The islands are interconnected by a non-magnetic, conductive layer with electrical contacts coupled thereto to complete the GMR sensor. When the sensor is not subjected to a magnetic field, the magnetic alignment of the islands is random, and electron scattering results in a high resistance state.

Abstract: A magnetic random access memory using magnetic domain drag and giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) and a method of operating the same, wherein the magnetic random access memory includes a data storage unit including a fixed layer, a non-magnetic layer, and a free layer having two ends; a data input means electrically connected to both ends of the free layer, for applying current to the free layer to input data into the data storage unit; and a data output means electrically connected to the free layer and the fixed layer to output data stored in the data storage unit. Accordingly, a magnetic random access memory according to the present invention has superior performance than one using a switching field to record data.

Abstract: A portable card reader designed to be carried in a wallet or purse has an electromagnetic head that reads information from a magnetic strip of a card or information is read from the card by an array of Hall sensors. In a further embodiment, the card reader uses a magnetic sensor based on magnetoresistive sensing of magnetic transitions of a magnetic stripe, suitable for use with small, portable electronic devices. In each embodiment, the information read from the card may be converted to a sequence of electronic bursts of predetermined frequency, preferably in the audible or ultrasound range. The sound signals are output by a speaker to the microphone of a telephone. The signal is then transmitted over the telephone lines to a remote receiver. The receiver then converts the sound bursts into signal pulses, which can be read using the computer software of a conventional card reader.

Abstract: A portable card reader is designed to be carried in a wallet or purse. In a first embodiment, the card reader has an electromagnetic head that reads information from a magnetic strip of a card. In a second embodiment, information is read from the card by an array of Hall sensors. In a further embodiment, the card reader uses a magnetic sensor based on magnetoresistive sensing of magnetic transitions of a magnetic stripe, suitable for use with small, portable electronic devices. In each embodiment, the information read from the card may be converted to a sequence of electronic bursts of predetermined frequency, preferably in the audible or ultrasound range. The sound signals are output by a speaker to the microphone of a telephone. The signal is then transmitted over the telephone lines to a remote receiver. The receiver then converts the sound bursts into signal pulses which can be read using the computer software of a conventional card reader.

Abstract: Disclosed is a process for making a flexible magnet with an induced anisotropy, and in particular to a process for making a flexible anisotropic magnet by thermal spraying in the presence of an applied magnetic field. The method may be used to fabricate a substrate having a flexible anisotropic magnetic coating or a free standing anisotropic flexible magnet.

Abstract: A giant magnetoresistance (GMR) sensor is formed using a self organizing diblock copolymer as an etching mask. The diblock copolymer is deposited over a magnetic layer and is self organized into regions of two discrete thicknesses; higher thickness island regions separated by lower thickness valley regions. After the diblock layer is self organized, an etching of process is performed to remove the polymer material from the valley regions as well as the underlying magnetic material. After etching, a patterned magnetic thin film of submicron islands of magnetic material, preferably having a diameter in the single domain range, remain under the mesa region. The islands are interconnected by a non-magnetic, conductive layer with electrical contacts coupled thereto to complete the GMR sensor. When the sensor is not subjected to a magnetic field, the magnetic alignment of the islands is random, and electron scattering results in a high resistance state.

Abstract: A magnetoresistive material with two metallic magnetic phases. The material exhibits the giant magnetoresistance effect (GMR). A first phase of the material includes a matrix of an electrically conductive ferromagnetic transition metal or an alloy thereof. A second precipitate phase exhibits ferromagnetic behavior when precipitated into the matrix and is antiferromagnetically exchange coupled to the first phase. The second precipitate phase can be electrically conductive rare earth pnictide or can be a Heusler alloy. A method of manufacturing magnetoresistive materials according to the present invention employs facing targets magnetron sputtering.

Abstract: A device comprising a magnetoresistive material including a mixture of powdered CrO2 having granules at least partially coated with Cr2O3, and powdered Ni, the mixture being compressed to form a compacted material which exhibits a magnetoresistance ratio of at least 12% at 300° K and 4000 Oe.