Patents by Inventor Richard J. Phillips

Richard J. Phillips has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210272145
    Abstract: A computer-implemented method of incentivizing an insurance agent to update a blockchain. The method includes receiving, at one or more processors, a message indicating an agent updated a blockchain with information about a customer or a real estate property. The method further includes increasing, according to an interval of time, a score of the agent for at least one item of information about one or more of the customer or the real estate property updated to the blockchain. The method still further includes calculating an agent rating based upon the score of the agent, the agent rating used to compute one or more of compensation or bonus of the agent.
    Type: Application
    Filed: May 9, 2018
    Publication date: September 2, 2021
    Inventors: Benjamin Tarmann, Richard R. Rhodes, Lokesh Awasthy, Denise DeRoeck, Jaime Skaggs, Jacob J. Alt, Shanna L. Phillips, Shyam Tummala, Matthew S. Meierotto, Richard D. Groonwald, Brian J. Hughes
  • Patent number: 11100574
    Abstract: A system and computer-implemented method for continuously updating information about one or more of a customer approved for a mortgage and a real estate property identified as mortgage ready using computer technology and/or machine learning algorithms or artificial intelligence. The method includes monitoring information corresponding to one or more of the customer or the real estate property; identifying new information about one or more of the customer or the real estate property; updating a computer file and/or memory location/address to include the new information about one or more of the customer or the real estate property; and recalculating one or more of the amount in which the customer is approved for the mortgage or the appraisal value of the real estate property based upon one or more of new information received and the updated information from the computer file and/or memory location/address.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: August 24, 2021
    Assignee: State Farm Mutual Automobile Insurance Company
    Inventors: Benjamin Tarmann, Richard R. Rhodes, Lokesh Awasthy, Denise DeRoeck, Jaime Skaggs, Jacob J. Alt, Shanna L. Phillips, Shyam Tummala, Matthew S. Meierotto, Richard D. Groonwald, Brian J. Hughes
  • Publication number: 20210180206
    Abstract: A method for producing a silicon ingot by the horizontal magnetic field Czochralski method includes rotating a crucible containing a silicon melt, applying a horizontal magnetic field to the crucible, contacting the silicon melt with a seed crystal, and withdrawing the seed crystal from the silicon melt while rotating the crucible to form a silicon ingot. The crucible has a wettable surface with a cristobalite layer formed thereon.
    Type: Application
    Filed: December 8, 2020
    Publication date: June 17, 2021
    Inventors: JaeWoo Ryu, JunHwan Ji, WooJin Yoon, Richard J. Phillips, Carissima Marie Hudson
  • Publication number: 20210071315
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Application
    Filed: October 15, 2020
    Publication date: March 11, 2021
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
  • Patent number: 10920337
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: February 16, 2021
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Richard J. Phillips, Parthiv Daggolu, Eric Gitlin, Robert Standley, HyungMin Lee, Nan Zhang, Jae-Woo Ryu, Soubir Basak
  • Publication number: 20200407869
    Abstract: Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during ingot growth. Ingot puller apparatus that use a solid-phase dopant are also disclosed. The solid-phase dopant may be disposed in a receptacle that is moved closer to the surface of the melt or a vaporization unit may be used to produce a dopant gas from the solid-phase dopant.
    Type: Application
    Filed: May 15, 2020
    Publication date: December 31, 2020
    Inventors: William L. Luter, Hariprasad Sreedharamurthy, Stephan Haringer, Richard J. Phillips, Nan Zhang, Yu-Chaio Wu
  • Patent number: 10793969
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: October 6, 2020
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
  • Patent number: 10781532
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: September 22, 2020
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
  • Publication number: 20200208294
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control are disclosed. The methods involve growth of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The sample rod is cropped to form a center slab. The resistivity of the center slab may be measured directly such as by a four-point probe. The sample rod or optionally the center slab may be annealed in a thermal donor kill cycle prior to measuring the resistivity, and the annealed rod or slab is irradiated with light in order to enhance the relaxation rate and enable more rapid resistivity measurement.
    Type: Application
    Filed: December 11, 2019
    Publication date: July 2, 2020
    Inventors: Carissima Marie Hudson, HyungMin Lee, JaeWoo Ryu, Richard J. Phillips, Robert Wendell Standley
  • Patent number: 10557213
    Abstract: A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: February 11, 2020
    Assignee: GLOBALWAFERS CO., LTD.
    Inventors: Richard J. Phillips, Soubir Basak, Gaurab Samanta
  • Publication number: 20200002836
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 2, 2020
    Inventors: Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
  • Publication number: 20200002835
    Abstract: Methods for forming single crystal silicon ingots with improved resistivity control. The methods involve growth and resistivity measurement of a sample rod. The sample rod may have a diameter less than the diameter of the product ingot. The resistivity of the sample rod may be measured directly by contacting a resistivity probe with a planar segment formed on the sample rod. The sample rod may be annealed in a thermal donor kill cycle prior to measuring the resistivity.
    Type: Application
    Filed: June 27, 2018
    Publication date: January 2, 2020
    Inventors: Carissima Marie Hudson, JaeWoo Ryu, Richard J. Phillips, Robert Standley, HyungMin Lee, YoungJung Lee
  • Patent number: 10407797
    Abstract: A system for forming an ingot from a melt includes a first crucible defining a cavity for receiving the melt and a second crucible in the cavity. The second crucible separates an outer zone from an inner zone. The second crucible includes a passageway therethrough to allow the melt located within the outer zone to move into the inner zone. The inner zone defines a growth area for the ingot. The system also includes a barrier located within the outer zone to limit movement of the melt through the outer zone. The barrier includes members that are arranged to define a labyrinth for melt flow.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: September 10, 2019
    Assignee: Corner Start Limited
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers
  • Publication number: 20190153615
    Abstract: Systems and methods for forming an ingot from a melt are disclosed. A method includes placing conditioning members within a cavity defined by a crucible and placing feedstock material into the cavity. The method also includes melting the feedstock material to form the melt. A melt line is defined by a surface of the melt. The conditioning members including quartz bodies arranged at the melt line to contact the melt and reduce the number of micro-voids in the melt.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 23, 2019
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers, Steven Lawrence Kimbel, Harold W. Korb, John D. Holder, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Stephan Haringer, Marco Zardoni
  • Patent number: 10221500
    Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: March 5, 2019
    Assignee: Corner Star Limited
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers, Steven Lawrence Kimbel, Harold W. Korb, John D. Holder, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Stephan Haringer, Marco Zardoni
  • Publication number: 20180320287
    Abstract: A system for forming an ingot from a melt includes a first crucible defining a cavity for receiving the melt and a second crucible in the cavity. The second crucible separates an outer zone from an inner zone. The second crucible includes a passageway therethrough to allow the melt located within the outer zone to move into the inner zone. The inner zone defines a growth area for the ingot. The system also includes a barrier located within the outer zone to limit movement of the melt through the outer zone. The barrier includes members that are arranged to define a labyrinth for melt flow.
    Type: Application
    Filed: May 4, 2017
    Publication date: November 8, 2018
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers
  • Publication number: 20180291524
    Abstract: Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.
    Type: Application
    Filed: April 29, 2016
    Publication date: October 11, 2018
    Inventors: Soubir Basak, Gaurab Samanta, Salvador Zepeda, Christopher V. Luers, Steven L. Kimbel, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Roberto Scala, Richard J. Phillips, Tirumani N. Swaminathan, Jihong Chen, Stephen Wayne Palmore, Peter Drury Wildes
  • Patent number: 10066314
    Abstract: A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: September 4, 2018
    Assignee: GlobalWafers Co., Ltd.
    Inventors: Richard J. Phillips, Soubir Basak, Gaurab Samanta
  • Publication number: 20180202065
    Abstract: A system for growing a crystal ingot from a melt includes a crucible assembly configured to contain the melt and a susceptor configured to support the crucible assembly. The crucible assembly includes a substantially transparent crucible. The system further includes a heating system for generating thermal energy and disposed to supply thermal energy to the susceptor via thermal radiation. The susceptor enables transfer of thermal energy to the melt via radiation through the transparent crucible.
    Type: Application
    Filed: March 14, 2018
    Publication date: July 19, 2018
    Inventors: Richard J. Phillips, Soubir Basak, Gaurab Samanta
  • Publication number: 20180187329
    Abstract: Systems and methods for forming an ingot from a melt are disclosed. A system includes a crucible defining a cavity for receiving the melt, and a first and second barrier to inhibit movement of the melt. A first passageway and a second passageway are arranged to allow the melt located within an outer zone to move into and through a transition zone and into an inner zone. Conditioning members are placed in at least one of the zones and arranged to contact the melt to reduce the number of micro-voids in the melt.
    Type: Application
    Filed: January 4, 2017
    Publication date: July 5, 2018
    Inventors: Salvador Zepeda, Richard J. Phillips, Christopher Vaughn Luers, Steven Lawrence Kimbel, Harold W. Korb, John D. Holder, Carissima Marie Hudson, Hariprasad Sreedharamurthy, Stephan Haringer, Marco Zardoni