Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

Abstract: The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.

Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: A method of forming a microelectromechanical device is disclosed wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductor. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: A method of forming a microelectromechanical device wherein a beam of the microelectromechanical device may deviate from a resting to an engaged or disengaged position through electrical biasing. The microelectromechanical device comprises a beam disposed above a first RF conductor and a second RF conductors. The microelectromechanical device further comprises at least a center stack, a first RF stack, a second RF stack, a first stack formed on a first base layer, and a second stack formed on a second base layer, each stack disposed between the beam and the first and second RF conductors. The beam is configured to deflect downward to first contact the first stack formed on the first base layer and the second stack formed on the second base layer simultaneously or the center stack, before contacting the first RF stack and the second RF stack simultaneously.

Abstract: The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling. The disclosure includes a modified leg and anchor design that allows for larger currents to be handled by the MEMS switch.

Abstract: The present disclosure generally relates to the design of a MEMS ohmic switch which provides for a low-impact landing of the MEMS device movable plate on the RF contact and a high restoring force for breaking the contacts to improve the lifetime of the switch. The switch has at least one contact electrode disposed off-center of the switch device and also has a secondary landing post disposed near the center of the switch device. The secondary landing post extends to a greater height above the substrate as compared to the RF contact of the contact electrode so that the movable plate contacts the secondary landing post first and then gently lands on the RF contact. Upon release, the movable plate will disengage from the RF contact prior to disengaging from the secondary landing post and have a longer lifetime due to the high restoring force.

Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

Abstract: The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.

Abstract: The present invention generally relates to a MEMS device having a plurality of cantilevers that are coupled together in an anchor region and/or by legs that are coupled in a center area of the cantilever. The legs ensure that each cantilever can move/release from above the RF electrode at the same voltage. The anchor region coupling matches the mechanical stiffness in all sections of the cantilever so that all of the cantilevers move together.

Abstract: The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.

Abstract: The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.

Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.

Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

Abstract: The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling.

Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.