Patents by Inventor Richard L. Knipe

Richard L. Knipe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10224164
    Abstract: The present invention generally relates to a MEMS device having a plurality of cantilevers that are coupled together in an anchor region and/or by legs that are coupled in a center area of the cantilever. The legs ensure that each cantilever can move/release from above the RF electrode at the same voltage. The anchor region coupling matches the mechanical stiffness in all sections of the cantilever so that all of the cantilevers move together.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: March 5, 2019
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus Van Kampen, Anartz Unamuno, Richard L. Knipe, Roberto Gaddi, Rashed Mahameed
  • Publication number: 20190066957
    Abstract: The present disclosure generally relates to a mechanism for making a MEMS switch that can switch large electrical powers. Extra landing electrodes are employed that provide added electrical contact along the MEMS device so that when in contact current and heat are removed from the MEMS structure close to the hottest points.
    Type: Application
    Filed: November 14, 2016
    Publication date: February 28, 2019
    Inventors: Robertus Petrus VAN KAMPEN, Richard L. KNIPE
  • Publication number: 20190066958
    Abstract: The present disclosure generally relates to a MEMS device for reducing ESD. A contacting switch is used to ensure that there is a closed electrical contact between two electrodes even if there is no applied bias voltage.
    Type: Application
    Filed: November 15, 2016
    Publication date: February 28, 2019
    Inventors: Robertus Petrus VAN KAMPEN, Lance BARRON, Roberto GADDI, Richard L. KNIPE
  • Patent number: 10163566
    Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: December 25, 2018
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus Van Kampen, Roberto Gaddi, Richard L. Knipe
  • Publication number: 20180315572
    Abstract: The present invention generally relates to a mechanism for making the anchor of the MEMS switch more robust for current handling.
    Type: Application
    Filed: November 14, 2016
    Publication date: November 1, 2018
    Inventors: Robertus Petrus VAN KAMPEN, Richard L. KNIPE
  • Publication number: 20180315571
    Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.
    Type: Application
    Filed: November 15, 2016
    Publication date: November 1, 2018
    Inventors: Robertus Petrus VAN KAMPEN, Richard L. KNIPE, Mickael RENAULT, Shibajyoti Ghosh DASTIDER, Jacques Marcel MUYANGO
  • Patent number: 9948212
    Abstract: The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: April 17, 2018
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Cong Quoc Khieu, James Douglas Huffman, Richard L. Knipe, Vikram Joshi, Robertus Petrus Van Kampen
  • Publication number: 20180033553
    Abstract: The present disclosure generally relates to a MEMS DVC utilizing one or more MIM capacitors located in the anchor of the DVC and an Ohmic contact located on the RF-electrode. The MIM capacitor in combination with the ohmic MEMS device ensures that a stable capacitance for the MEMS DVC is achieved with applied RF power.
    Type: Application
    Filed: January 28, 2016
    Publication date: February 1, 2018
    Inventors: Robertus Petrus VAN KAMPEN, Roberto GADDI, Richard L. KNIPE
  • Patent number: 9754724
    Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.
    Type: Grant
    Filed: June 4, 2014
    Date of Patent: September 5, 2017
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus Van Kampen, Richard L. Knipe
  • Patent number: 9711291
    Abstract: The present invention generally relates to a MEMS DVC and a method for fabrication thereof. The MEMS DVC comprises a plate movable from a position spaced a first distance from an RF electrode and a second position spaced a second distance from the RF electrode that is less than the first distance. When in the second position, the plate is spaced from the RF electrode by a dielectric layer that has an RF plateau over the RF electrode. One or more secondary landing contacts and one or more plate bend contacts may be present as well to ensure that the plate obtains a good contact with the RF plateau and a consistent Cmax value can be obtained. On the figure PB contact is the plate bend contact, SL contact is the Second Landing contact and the PD electrode is the Pull Down electrode.
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: July 18, 2017
    Assignee: Cavendish Kinetics, Inc.
    Inventors: Richard L. Knipe, Robertus Petrus Van Kampen
  • Patent number: 9711290
    Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.
    Type: Grant
    Filed: September 24, 2014
    Date of Patent: July 18, 2017
    Assignee: Cavendish Kinetics, Inc.
    Inventors: Mickael Renault, Vikram Joshi, Robertus Petrus Van Kampen, Thomas L. Maguire, Richard L. Knipe
  • Patent number: 9708177
    Abstract: Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.
    Type: Grant
    Filed: August 31, 2012
    Date of Patent: July 18, 2017
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus Van Kampen, Mickael Renault, Vikram Joshi, Richard L. Knipe, Anartz Unamuno
  • Patent number: 9589731
    Abstract: In a MEMS device, the manner in which the membrane lands over the RF electrode can affect device performance. Bumps or stoppers placed over the RF electrode can be used to control the landing of the membrane and thus, the capacitance of the MEMS device. The shape and location of the bumps or stoppers can be tailored to ensure proper landing of the membrane, even when over-voltage is applied. Additionally, bumps or stoppers may be applied on the membrane itself to control the landing of the membrane on the roof or top electrode of the MEMS device.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: March 7, 2017
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus Van Kampen, Anartz Unamuno, Richard L. Knipe, Vikram Joshi, Roberto Gaddi, Toshiyuki Nagata
  • Patent number: 9443658
    Abstract: A variable capacitor (300) comprises cells (200, 400) that have an RF electrode (202, 402) coupled to a bond pad (30). Each cell comprises a plurality of MEMS devices (100) the capacitance of which can be changed by means of a movable electrode. The MEMS devices are placed in a sealed cavity of the cell and are arranged next to each other along the length of the RF electrode of the cell. The RF electrode of each cell can be trimmed so as to obtain an RF line (402) and a further ground electrode (404) and so as to scale the RF capacitance of the cell without impacting the mechanical performance of the MEMS cells. Each cell has the same control capacitance irrespective of the RF capacitance. This allows each cell to use the same isolation resistor required for RF operation and thus each cell has the same parasitic capacitance. This allows the CMOS control circuit to be optimized and the dynamic performance of the cells to be matched.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: September 13, 2016
    Assignee: Cavendish Kinetics, Inc.
    Inventors: Robertus Petrus Van Kampen, Richard L. Knipe
  • Publication number: 20160240320
    Abstract: The present invention generally relates to a MEMS device and a method of manufacture thereof. The RF electrode, and hence, the dielectric layer thereover, has a curved upper surface that substantially matches the contact area of the bottom surface as of the movable plate. As such, the movable plate is able to have good contact with the dielectric layer and thus, good capacitance is achieved.
    Type: Application
    Filed: September 24, 2014
    Publication date: August 18, 2016
    Inventors: Mickael RENAULT, Vikram JOSHI, Robertus Petrus VAN KAMPEN, Thomas L. MAGUIRE, Richard L. KNIPE
  • Patent number: 9385594
    Abstract: The present invention generally relates to a DVC having a charge-pump coupled to a MEMS device. The charge-pump is designed to control the output voltage delivered to the electrodes, such as the pull-in electrode or the pull-off electrode, that move the switching element within the MEMS device between locations spaced far from and disposed closely to the RF electrode.
    Type: Grant
    Filed: April 2, 2014
    Date of Patent: July 5, 2016
    Assignee: Cavendish Kinetics, Inc.
    Inventors: Robertus Petrus Van Kampen, Cong Quoc Khieu, James Douglas Huffman, Richard L. Knipe
  • Patent number: 9373447
    Abstract: Utilizing a variable capacitor for RF and microwave applications provides for multiple levels of intra-cavity routing that advantageously reduce capacitive coupling. The variable capacitor includes a bond pad that has a plurality of cells electrically coupled thereto. Each of the plurality of cells has a plurality of MEMS devices therein. The MEMS devices share a common RF electrode, one or more ground electrodes and one or more control electrodes. The RF electrode, ground electrodes and control electrodes are all arranged parallel to each other within the cells. The RF electrode is electrically connected to the one or more bond pads using a different level of electrical routing metal.
    Type: Grant
    Filed: August 17, 2012
    Date of Patent: June 21, 2016
    Assignee: CAVENDISH KINETICS, INC.
    Inventors: Roberto Gaddi, Robertus Petrus Van Kampen, Richard L. Knipe, Anartz Unamuno
  • Publication number: 20160172112
    Abstract: The present invention generally relates to a MEMS DVC utilizing one or more MIM capacitors. The MIM capacitor may be disposed between the MEMS device and the RF pad or the MIM capacitor may be integrated into the MEMS device itself. The MIM capacitor ensures that a low resistance for the MEMS DVC is achieved.
    Type: Application
    Filed: August 1, 2014
    Publication date: June 16, 2016
    Inventors: Richard L. KNIPE, Charles G. SMITH, Roberto GADDI, Robertus Petrus VAN KAMPEN
  • Patent number: 9336953
    Abstract: The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the number of movements of a switching element in the MEMS device. Rather than returning to a ground state between cycles, the switching element can remain in the same state if both cycles necessitate the same capacitance. For example, if in both a first and second cycle, the switching element of the MEMS device is in a state of high capacitance the switching element can remain in place between the first and second cycle rather than move to the ground state. Even if the polarity of the capacitance is different in successive cycles, the switching element can remain in place and the polarity can be switched. Because the switching element remains in place between cycles, the switching element, while having the same finite number of movements, should have a longer lifetime.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: May 10, 2016
    Assignee: CAVENDISH KINETICS INC.
    Inventors: Cong Quoc Khieu, Vikram Joshi, Richard L. Knipe
  • Publication number: 20160126017
    Abstract: The present invention generally relates to a MEMS digital variable capacitor (DVC) (900) and a method for manufacture thereof. The movable plate (938) within a MEMS DVC should have the same stress level to ensure proper operation of the MEMS DVC. To obtain the same stress level, the movable plate is decoupled from CMOS ground during fabrication. The movable plate is only electrically coupled to CMOS ground after the plate has been completely formed. The coupling occurs by using the same layer (948) that forms the pull-up electrode as the layer that electrically couples the movable plate to CMOS ground. As the same layer couples the movable plate to CMOS ground and also provides the pull-up electrode for the MEMS DVC, the deposition occurs in the same processing step. By electrically coupling the movable plate to CMOS ground after formation, the stress in each of the layers of the movable plate can be substantially identical.
    Type: Application
    Filed: June 4, 2014
    Publication date: May 5, 2016
    Applicants: CAVENDISH KINETICS, INC., CAVENDISH KINETICS, INC.
    Inventors: Robertus Petrus VAN KAMPEN, Richard L. KNIPE