Abstract: A memory controller controls access to, and the power state of a plurality of dynamic memory devices. A cache in the memory controller stores entries that indicate a current power state for a subset of the dynamic memory devices. Device state lookup logic responds to a memory access request by retrieving first information from an entry, if any, in the cache corresponding to a device address in the memory access request. The device state lookup logic generates a miss signal when the cache has no entry corresponding to the device address. It also retrieves second information indicating whether the cache is currently storing a maximum allowed number of entries for devices in a predefined mid-power state. Additional logic converts the first and second information and miss signal into at least one command selection signal and at least one update control signal. Cache update logic updates information stored in the cache in accordance with the at least one update control signal.

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: A method and circuit for achieving minimum latency data transfer between two mesochronous (same frequency, different phase) clock domains is disclosed. This circuit supports arbitrary phase relationships between two clock domains and is tolerant of temperature and voltage shifts after initialization while maintaining the same output data latency. In one embodiment, this circuit is used on a bus-system to re-time data from receive-domain, clocks to transmit-domain clocks. In such a system the phase relationships between these two clocks is set by the device bus location and thus is not precisely known. By supporting arbitrary phase resynchronization, this disclosure allows for theoretically infinite bus-length and thus no limitation on device count, as well as arbitrary placement of devices along the bus. This ultimately allows support of multiple latency-domains for very long buses.

Abstract: A memory device includes an interconnect with mask pins and a memory core for storing data. A memory interface circuit is connected between the interconnect and the memory core. The memory interface circuit selectively processes write mask data from the mask pins or precharge instruction signals from the mask pins.

Abstract: An integrated circuit memory device that include an input receiver, an output driver, and a capacitive coupling element. The capacitive coupling element includes a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is coupled to the input receiver and the output driver, an the second capacitor electrode couples to an external signal line. Delay modulated data is received by the input receiver from the external signal line via the capacitive coupling element.

Abstract: A method and apparatus for initializing dynamic random access memory (DRAM) devices is provided wherein a channel is levelized by determining the response time of each of a number of DRAM devices coupled to a bus. Determining the response time for a DRAM device comprises writing logic ones to a memory location of the DRAM device using the bus. Subsequently, a read command is issued over the bus, wherein the read command is addressed to the newly-written memory location of the DRAM device. The memory controller then measures the elapsed time between the issuance of the read command and the receipt of the logic ones from the DRAM device, and this elapsed time is the response time of the DRAM device. Following the determination of a response time for each DRAM device, and using the longest response time, a delay is computed for each of the DRAM devices coupled to the bus so that the response time, in clock cycles, of each of the DRAM devices coupled to the bus equals the longest response time.

Abstract: A memory module includes an array of N memory devices, each memory device having M data pins, where N is greater than M, and M and N are positive integers; and N bit lines traversing the array of N memory devices, such that each one of the N bit lines is connected to M of the N memory devices.

Abstract: Bus communications are optimized by adjusting signal characteristics in accordance with one or more topography dependent parameters. In a bus transmitter, a transmit signal characteristic is adjusted in accordance with a topography dependent parameter. A port in the bus transmitter receives the topography dependent parameter for later use by the parameter adjustment circuitry. The parameter adjustment circuitry adjusts a parameter control signal in accordance with the topography dependent parameter, which is coupled to the output driver. Prior to driving an output signal onto a bus, the output driver adjusts the transmit signal characteristic in accordance with the parameter control signal. Similarly, in a bus receiver, a receive signal characteristic is adjusted in response to a topography dependent parameter.

Abstract: A memory controller controls access to, and the power state of a plurality of dynamic memory devices. A cache in the memory controller stores entries that indicate a current power state for a subset of the dynamic memory devices. Device state lookup logic responds to a memory access request by retrieving first information from an entry, if any, in the cache corresponding to a device address in the memory access request. The device state lookup logic generates a miss signal when the cache has no entry corresponding to the device address. It also retrieves second information indicating whether the cache is currently storing a maximum allowed number of entries for devices in a predefined mid-power state. Additional logic converts the first and second information and miss signal into at least one command selection signal and at least one update control signal. Cache update logic updates information stored in the cache in accordance with the at least one update control signal.

Abstract: Bus communications are optimized by adjusting signal characteristics in accordance with one or more topography dependent parameters. In a bus transmitter, a transmit signal characteristic is adjusted in accordance with a topography dependent parameter. A port in the bus transmitter receives the topography dependent parameter for later use by the parameter adjustment circuitry. The parameter adjustment circuitry adjusts a parameter control signal in accordance with the topography dependent parameter, which is coupled to the output driver. Prior to driving an output signal onto a bus, the output driver adjusts the transmit signal characteristic in accordance with the parameter control signal. Similarly, in a bus receiver, a receive signal characteristic is adjusted in response to a topography dependent parameter.

Abstract: A bus system for use with addressable memory has a global bus of bidirectional signal lines. The global bus has a first end and a second end. A master device transmits data to and receives data from the global bus at the first end. A global bus terminator is coupled to the global bus at the second end. One or more slave devices, including a last slave device at a furthest distance from the master device, each includes an active terminator coupled to at least some of the bidirectional signal lines of the global bus. The active terminator of only the last slave device is enabled.

Abstract: A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.

Abstract: A method and apparatus for adjusting the performance of a memory system is provided. A memory control device comprises a master device including a frequency detector, a memory channel, and a memory device coupled to the master device via the memory channel. The memory device includes a decoder designed to receive a control signal from the master device. A clock recovery and alignment circuit receives the control signal from the decoder and adjusts the operating frequency of the memory device in response to the control signal.

Abstract: A memory controller for a high-performance memory system has a pipeline architecture for generating control commands which satisfy logical, timing, and physical constraints imposed on control commands by the memory system. The pipelined memory controller includes a bank state cache lookup for determining a memory bank state for a target memory bank to which a control command is addressed, and a hazard detector for determining when a memory bank does not have a proper memory bank state for receiving and processing the control command. The hazard detector stalls the operation of the control command until the memory bank is in a proper state for receiving and processing the control command. The memory controller also has a command sequencer which sequences control commands to satisfy logical constraints imposed by the memory system, and a timing coordinator to time the communication of the sequenced control commands to satisfy timing requirements imposed by the memory.

Abstract: A method for reducing the communication overhead over the interface bus to the memory devices for refresh operations. This is done by refreshing multiple banks in response to a single command. Multibank refresh is made possible by varying the current profile for the row sense and row precharge currents during a refresh operation, as compared to normal memory access. Unlike normal memory accesses, data is not needed, and a fast access time is not required. This allows the current to be spread using different circuitry for driving the current to lessen current spikes. The spread current is still maintained within the timing of a normal memory access.

Abstract: A memory device with multiple clock domains. Separate clocks to different portions of the control circuitry create different clock domains. The different domains are sequentially turned on as needed to limit the power consumed. The turn on time of the domains is overlapped with the latency for the memory access to make the power control transparent to the user accessing the memory core. The memory device can dynamically switch between a fast and a slow clock depending upon the needed data bandwidth. The data bandwidth across the memory interface can be monitored by the memory controller, and when it drops below a certain threshold, a slower clock can be used. The clock speed can be dynamically increased as the bandwidth demand increases.

Abstract: Bus communications are optimized by adjusting signal characteristics in accordance with one or more topography dependent parameters. In a bus transmitter, a transmit signal characteristic is adjusted in accordance with a topography dependent parameter. A port in the bus transmitter receives the topography dependent parameter for later use by the parameter adjustment circuitry. The parameter adjustment circuitry adjusts a parameter control signal in accordance with the topography dependent parameter, which is coupled to the output driver. Prior to driving an output signal onto a bus, the output driver adjusts the transmit signal characteristic in accordance with the parameter control signal. Similarly, in a bus receiver, a receive signal characteristic is adjusted in response to a topography dependent parameter.

Abstract: A system and method for controlling data access in a memory system is disclosed. The memory system is characterized by the use of a transport and retire write request, memory devices incorporating a retire buffer, and inherent data retirement. Addresses associated with un-retired write data are stored in the memory controller and compared to the address of a read request following one or more write requests. Where a read request is directed to an address associated with an un-retired write data, the read request is stalled in the memory controller.

Abstract: A memory controller controls access to, and the power state of a plurality of dynamic memory devices. A cache in the memory controller stores entries that indicate a current power state for a subset of the dynamic memory devices. Device state lookup logic responds to a memory access request by retrieving first information from an entry, if any, in the cache corresponding to a device address in the memory access request. The device state lookup logic generates a miss signal when the cache has no entry corresponding to the device address. It also retrieves second information indicating whether the cache is currently storing a maximum allowed number of entries for devices in a predefined mid-power state. Additional logic converts the first and second information and miss signal into at least one command selection signal and at least one update control signal. Cache update logic updates information stored in the cache in accordance with the at least one update control signal.

Abstract: A high-speed memory system is disclosed in which a single command effects control over either a single memory device or a plurality of memory devices depending on a present mode of operation. Such control may effect data transfer between the one or more memory devices and a memory controller, as well as operating state transitions or power mode transitions for the memory devices. Similarly, various configurations of relatively low bandwidth memory devices respond as a selectively controllable group to transmit or receive high bandwidth data.