Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure.

Abstract: An electronic device includes a source region and a drain region, a self-assembled monolayer disposed adjacent to the source region and the drain region, the self-assembled monolayer including at least one conjugated molecule, and a conductive substrate disposed adjacent to the self-assembled monolayer.

Abstract: A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecting electrons into the channel, and a drain coupled to a second end of the channel injecting holes into the channel.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.

Abstract: An electronic device includes a source region and a drain region, a self-assembled monolayer disposed adjacent to the source region and the drain region, the self-assembled monolayer including at least one conjugated molecule, and a conductive substrate disposed adjacent to the self-assembled monolayer.

Abstract: A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube structure.

Abstract: A light emitting device comprises a gate electrode, a channel comprising a molecule for electrically stimulated optical emission, wherein the molecule is disposed within an effective range of the gate electrode, a source coupled to a first end of the channel injecting electrons into the channel, and a drain coupled to a second end of the channel injecting holes into the channel.

Abstract: A method is provided for forming a device. The method provides a substrate, and provides a plurality of nanotubes in contact with the substrate. The method comprises depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube. The method further comprises selectively breaking the at least one nanotube using an electrical current, removing the metal contacts, cleaning a remaining nanotube, and depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.

Abstract: A method for growing single-walled nanotubes comprises providing a silicon carbide semiconductor wafer comprising a silicon face and a carbon face, and annealing the silicon carbide semiconductor wafer in a vacuum at a temperature of at least about 1300 degrees Celsius, inducing formation of single wall carbon nanotubes on the silicon face.

Abstract: A self-aligned carbon-nanotube field effect transistor semiconductor device comprises a carbon-nanotube deposited on a substrate, a source and a drain formed at a first end and a second end of the carbon-nanotube, respectively, and a gate formed substantially over a portion of the carbon-nanotube, separated from the carbon-nanotube by a dielectric film.

Abstract: A method is provided for forming a device. The method provides a substrate, and provides a plurality of nanotubes in contact with the substrate. The method comprises depositing metal contacts on the substrate, wherein the metal contacts are in contact with a portion of at least one nanotube. The method further comprises selectively breaking the at least one nanotube using an electrical current, removing the metal contacts, cleaning a remaining nanotube, and depositing a first metal contact in contact with a first end of the nanotube and a second metal contact in contact with a second end of the nanotube.

Abstract: A method is provided for forming a device. The method provides an insulating substrate including a source electrode, a drain electrode, and a gate electrode. The method provides carbon nanotube bundles including metallic and semiconducting component nanotubes in contact with the substrate. The method applies a voltage to the gate electrode to deplete the semiconducting component nanotubes of carriers, applies an electrical current through the nanotube, from a source electrode to a drain electrode, and breaks at least one metallic component nanotube to form a field effect transistor. The carbon nanotube bundle can be a multi-walled nanotube or a single-walled nanotube rope.

Abstract: There is disclosed a method of permanently attaching metallic spacers in gaseous discharge display panels by ultrasonically bonding said spacers between the glass substrates thereof to thin film metal tabs located between the electrodes. Such a method prevents any subsequent movement of the spacers after attachment and makes the spacers substantially invisible to the naked eye. The article so bonded is also an integral part of this invention.