Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: The present disclosure describes DRAM architectures and refresh controllers that allow for scheduling of an opportunistic refresh of a DRAM device concurrently with normal row activate command directed toward the DRAM device. Each activate command affords an “opportunity” to refresh another independent row (i.e., a wordline) within a memory device with no scheduling conflict.

Abstract: A method and apparatus for testing and characterizing circuits is provided. In one embodiment, a high-speed interface of a semiconductor component includes high-speed test circuitry. The high-speed test circuitry obviates the need for an external high-speed testing system for testing and characterization. In one embodiment, the high-speed test circuitry includes a test pattern generation circuit, and various differential comparators to compare low bandwidth reference signals with interface signals during testing and characterization. In one embodiment, an interface that includes the test circuitry can test itself or another interface. In one embodiment, a timing reference signal decouples the individual parameters of two interfaces testing each other to avoid any errors introduced by the combination of individual interface circuit parameters, such as receiver parameters and transmitter parameters. The testing can be performed at the wafer stage, at the component stage, and in a system.

Abstract: A method and apparatus for testing and characterizing circuits is provided. In one embodiment, a high-speed interface of a semiconductor component includes high-speed test circuitry. The high-speed test circuitry obviates the need for an external high-speed testing system for testing and characterization. In one embodiment, the high-speed test circuitry includes a test pattern generation circuit, and various differential comparators to compare low bandwidth reference signals with interface signals during testing and characterization. In one embodiment, an interface that includes the test circuitry can test itself or another interface. In one embodiment, a timing reference signal decouples the individual parameters of two interfaces testing each other to avoid any errors introduced by the combination of individual interface circuit parameters, such as receiver parameters and transmitter parameters. The testing can be performed at the wafer stage, at the component stage, and in a system.

Abstract: A method and apparatus for testing and characterizing circuits is provided. In one embodiment, a high-speed interface of a semiconductor component includes high-speed test circuitry. The high-speed test circuitry obviates the need for an external high-speed testing system for testing and characterization. In one embodiment, the high-speed test circuitry includes a test pattern generation circuit, and various differential comparators to compare low bandwidth reference signals with interface signals during testing and characterization. In one embodiment, an interface that includes the test circuitry can test itself or another interface. In one embodiment, a timing reference signal decouples the individual parameters of two interfaces testing each other to avoid any errors introduced by the combination of individual interface circuit parameters, such as receiver parameters and transmitter parameters. The testing can be performed at the wafer stage, at the component stage, and in a system.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered module having a configurable width buffer device. The configurable width buffer device is coupled to at least one memory device on the configurable width memory module. The configurable width buffer device includes an interface and a configurable serialization circuit capable of varying a data path width or a number of contacts used at the interface of the configurable width buffer device in accessing the at least one memory device. In an alternate embodiment of the present invention, a multiplexer/demultiplexer circuit is provided. A state storage provides a data width for the configurable width buffer and a SPD provides the configurable width buffer and/or module capabilities to the memory system.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device with at least one switch element. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. A switch element is positioned on or off a memory module and includes two transistors in embodiments of the invention. One or more switch elements are coupled to one or more channels to allow for upgrades of memory modules in a memory system. An asymmetrical switch topology allows for increasing the number of memory modules to more than two memory modules without adding switch elements serially on each channel. Switch elements allow for increasing the number of ranks of memory modules in a system, while also achieving many of the benefits associated with point-to-point topology.

Abstract: A system comprises a controller device, an integrated circuit buffer device and a first and second memory device. A first plurality of signal lines is coupled to the controller device. A second plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The second plurality of signal lines carries first address information from the integrated circuit buffer device to the first memory device. A third plurality of signal lines is coupled to the first memory device and the integrated circuit buffer device. The third plurality of signal lines carries first control information from the integrated circuit buffer device to the first memory device. A first signal line is coupled to the first memory device and the integrated circuit buffer device. The first signal line carries a first signal from the integrated circuit buffer device to the first memory device.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered module having a configurable width buffer device. The configurable width buffer device is coupled to at least one memory device on the configurable width memory module. The configurable width buffer device includes an interface and a configurable serialization circuit capable of varying a data path width or a number of contacts used at the interface of the configurable width buffer device in accessing the at least one memory device. In an alternate embodiment of the present invention, a multiplexer/demultiplexer circuit is provided. A state storage provides a data width for the configurable width buffer and a SPD provides the configurable width buffer and/or module capabilities to the memory system.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device with at least one bypass circuit. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. The configurable width buffer device is coupled to at least one memory device (by way of an internal channel), entry pin and exit pin on the memory module. The configurable width buffer device includes a multiplexer/demultiplexer circuit coupled to the entry pin and the internal channel for accessing the memory device. A bypass circuit is coupled to the entry pin and the exit pin in order to allow information to be transferred through the memory module to another coupled memory module in the memory system by way of an external channel.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered module having a configurable width buffer device. The configurable width buffer device is coupled to at least one memory device on the configurable width memory module. The configurable width buffer device includes an interface and a configurable serialization circuit capable of varying a data path width or a number of contacts used at the interface of the configurable width buffer device in accessing the at least one memory device. In an alternate embodiment of the present invention, a multiplexer/demultiplexer circuit is provided. A state storage provides a data width for the configurable width buffer and a SPD provides the configurable width buffer and/or module capabilities to the memory system.

Abstract: A method and system provides for execution of calibration cycles from time to time during normal operation of the communication channel. A calibration cycle includes de-coupling the normal data source from the transmitter and supplying a calibration pattern in its place. The calibration pattern is received from the communication link using the receiver on the second component. A calibrated value of a parameter of the communication channel is determined in response to the received calibration pattern. The steps involved in calibration cycles can be reordered to account for utilization patterns of the communication channel. For bidirectional links, calibration cycles are executed which include the step of storing received calibration patterns on the second component, and retransmitting such calibration patterns back to the first component for use in adjusting parameters of the channel at first component.

Abstract: A memory controller is disclosed. In one particular exemplary embodiment, the memory controller may comprise a first transmitter to output first and second write commands synchronously with respect to a clock signal, a second transmitter to output first data using a first timing offset such that the first data arrives at a first memory device in accordance with a predetermined timing relationship with respect to a first transition of the clock signal, and a third transmitter to output second data suing a second timing offset such that the second data arrives at a second memory device in accordance with a predetermined timing relationship with respect to a second transition of the clock signal.

Abstract: A memory system having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data, associated with a write command, to the first memory device, and a second signal line coupled to the second memory device to provide second data, associated with the write command, to the second memory device. A control signal path is coupled to the first and second memory devices and the termination component such that the write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the termination component. A third signal line is provided to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first and second memory devices.

Abstract: A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameters and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N?1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as is fixed codes less than 16 bytes, and for example as short as 2 bytes long.

Abstract: A memory system architecture/interconnect topology includes a configurable width buffered memory module having a configurable width buffer device and at least one flyby element. A buffer device, such as a configurable width buffer device, is positioned between or with at least one integrated circuit memory device positioned on a substrate surface of a memory module, such as a DIMM. A flyby element is positioned on a memory module and/or in the buffer device and includes conductive element or signal line in embodiments of the invention. One or more flyby elements are coupled to one or more memory modules to allow for upgrades of memory modules in a memory system. An asymmetrical flyby topology allows for increasing the number of memory modules to more than two memory modules without increasing any more delay than is present in with two memory modules.

Abstract: A system, among other embodiments, includes a memory controller having an integrated BER circuit and a plurality of memory devices. The memory controller also includes a control circuit and an interface having at least one transmit circuit to provide write data to at least one of the memory devices and at least one receive circuit to receive read data from at least one of the memory devices. The BER circuit includes a request generator circuit that outputs a request for a memory transaction. A request multiplexer selectively outputs a memory request to the interface from the request generator circuit or the control circuit. A data generator circuit outputs corresponding write data. A first write multiplexer selectively outputs the write data to the interface from the data generator circuit or the control circuit. A read multiplexer selectively receives read data from the receive circuit. The data generator circuit also outputs corresponding write data to a comparator circuit via a second write multiplexer.