Patents by Inventor Richard S. Harris
Richard S. Harris has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8338746Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.Type: GrantFiled: February 12, 2010Date of Patent: December 25, 2012Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Publication number: 20100140235Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.Type: ApplicationFiled: February 12, 2010Publication date: June 10, 2010Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Publication number: 20100084662Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.Type: ApplicationFiled: December 8, 2009Publication date: April 8, 2010Applicant: Electro Scientific Industries, Inc.Inventors: Kelly J. Bruland, Brian W. Baird, Ho Wai Lo, Richard S. Harris, Yunlong Sun
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Patent number: 7671295Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.Type: GrantFiled: December 17, 2002Date of Patent: March 2, 2010Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Patent number: 7633034Abstract: Methods and systems use laser pulses to process a selected structure on or within a semiconductor substrate. The structure has a surface, a width, and a length. The laser pulses propagate along axes that move along a scan beam path relative to the substrate as the laser pulses process the selected structure. The method simultaneously generates on the selected structure first and second laser beam pulses that propagate along respective first and second laser beam axes intersecting the selected structure at distinct first and second locations. The first and second laser beam pulses impinge on the surface of the selected structure respective first and second beam spots. Each beam spot encompasses at least the width of the selected link. The first and second beam spots are spatially offset from one another along the length of the selected structure to define an overlapping region covered by both the first and the second beam spots and a total region covered by one or both of the first and second beam spots.Type: GrantFiled: February 4, 2005Date of Patent: December 15, 2009Assignee: Electro Scientific Industries, Inc.Inventors: Kelly J. Bruland, Brian W. Baird, Ho Wai Lo, Richard S. Harris, Yunlong Sun
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Publication number: 20090155935Abstract: Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.Type: ApplicationFiled: February 20, 2009Publication date: June 18, 2009Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC.Inventors: Richard S. Harris, Ho W. Lo
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Publication number: 20090141750Abstract: Systems and methods for processing an electrically conductive link in an integrated circuit use a series of laser pulses having different pulse widths to remove different portions of a target structure without substantially damaging a material underlying the electrically conductive link. In one embodiment, an ultrafast laser pulse or bundle of ultrafast laser pulses removes an overlying passivation layer in a target area and a first portion of link material. Then, a nanosecond laser pulse removes a second portion of the link material to sever an electrical connection between two nodes in the integrated circuit. The nanosecond laser pulse is configured to reduce or eliminate damage to the underlying material.Type: ApplicationFiled: December 3, 2007Publication date: June 4, 2009Applicant: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Richard S. Harris
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Patent number: 7494900Abstract: Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.Type: GrantFiled: May 25, 2006Date of Patent: February 24, 2009Assignee: Electro Scientific Industries, Inc.Inventors: Richard S. Harris, Ho W. Lo
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Patent number: 7482551Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.Type: GrantFiled: November 23, 2005Date of Patent: January 27, 2009Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Publication number: 20070275541Abstract: Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser.Type: ApplicationFiled: May 25, 2006Publication date: November 29, 2007Inventors: Richard S. Harris, Ho W. Lo
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Patent number: 7157038Abstract: Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 ?J per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz.Type: GrantFiled: December 14, 2001Date of Patent: January 2, 2007Assignee: Electro Scientific Industries, Inc.Inventors: Brian W. Baird, Michael J. Wolfe, Richard S. Harris, Kevin P. Fahey, Lian-Cheng Zou, Thomas R. McNeil
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Patent number: 6806440Abstract: A quasi-CW diode- or lamp-pumped, A-O Q-switched solid-state UV laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the average pumping power to the laser medium (16), and thermal loading of the laser pumping diodes (14), remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.Type: GrantFiled: March 12, 2002Date of Patent: October 19, 2004Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Richard S. Harris
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Patent number: 6784399Abstract: An EOM Q-switched CO2 laser produces bursts of laser pulses delivered at a high PRF such as 20-140 kHz and having a short high-power spike of about 80-150 ns followed by a lower-power tail of about 0.05-12.0 &mgr;s. The bursts and/or laser pulses can be shaped by controlling the RF pumping duty cycle, the delay between the onset of RF pumping and the initiation of Q-switching, the pulse repetition frequency, and/or the duration of the tail. The bursts of laser pulses can be adapted to facilitate machining of metal layers and/or layers containing materials having disparate vaporization temperatures and/or disparate melting points, such as FR4 or green ceramics.Type: GrantFiled: May 9, 2002Date of Patent: August 31, 2004Assignees: Electro Scientific Industries, Inc., Coherent, Inc.Inventors: Corey M. Dunsky, Hisashi Matsumoto, Richard S. Harris, John T. Kennedy, Vernon A. Seguin, Leon Newman
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Patent number: 6781090Abstract: A quasi-CW diode-pumped, A-O Q-switched solid-state harmonic laser system (10) synchronizes timing of the quasi-CW pumping with movement of the positioning system (36) to reduce pumping while the positioning system (36) is moving from one target area (31) to the next target area (31) to form multiple vias in a substrate at a high throughput. Thus, the available UV power for via formation is higher even though the loading to the laser pumping diodes (14) remains the same as that currently available through conventional CW pumping with conventionally available laser pumping diodes (14). The quasi-CW-pumping current profile can be further modified to realize a preferred UV pulse amplitude profile.Type: GrantFiled: September 11, 2002Date of Patent: August 24, 2004Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Richard S. Harris
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Publication number: 20030222324Abstract: A set (50) of laser pulses (52) is employed to remove a conductive link (22) and/or its overlying passivation layer (44) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link and/or passivation removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed. Selected links (22) can be etched by chemical or other alternative methods when the sets (50) are used to remove only the overlying passivation layer (44) at the selected target positions.Type: ApplicationFiled: April 24, 2003Publication date: December 4, 2003Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris, Robert F. Hainsey, Lei Sun
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Publication number: 20030151053Abstract: A set (50) of laser pulses (52) is employed to sever a conductive link (22) in a memory or other IC chip. The duration of the set (50) is preferably shorter than 1,000 ns; and the pulse width of each laser pulse (52) within the set (50) is preferably within a range of about 0.1 ps to 30 ns. The set (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a set (50) of laser pulses (52) at each link (22). Conventional IR wavelengths or their harmonics can be employed.Type: ApplicationFiled: December 17, 2002Publication date: August 14, 2003Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Patent number: 6574250Abstract: A burst (50) of ultrashort laser pulses (52) is employed to sever a conductive link (22) in a nonthermal manner and offers a wider processing window, eliminates undesirable HAZ effects, and achieves superior severed link quality. The duration of the burst (50) is preferably in the range of 10 ns to 500 ns; and the pulse width of each laser pulse (52) within the burst (50) is generally shorter than 25 ps, preferably shorter than or equal to 10 ps, and most preferably about 10 ps to 100 fs or shorter. The burst (50) can be treated as a single “pulse” by conventional laser positioning systems (62) to perform on-the-fly link removal without stopping whenever the laser system (60) fires a burst (50) of laser pulses (52) at each link (22). Conventional wavelengths or their harmonics can be employed.Type: GrantFiled: January 9, 2001Date of Patent: June 3, 2003Assignee: Electro Scientific Industries, Inc.Inventors: Yunlong Sun, Edward J. Swenson, Richard S. Harris
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Patent number: RE43400Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.Type: GrantFiled: January 13, 2006Date of Patent: May 22, 2012Assignee: Electro Scientific Industries, Inc.Inventors: James N. O'Brien, Lian-Cheng Zou, Yunlong Sun, Kevin P. Fahey, Michael J. Wolfe, Brian W. Baird, Richard S. Harris
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Patent number: RE43487Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.Type: GrantFiled: January 8, 2009Date of Patent: June 26, 2012Assignee: Electro Scientific Industries, Inc.Inventors: James N. O'Brien, Lian-Cheng Zou, Yunlong Sun, Kevin P. Fahey, Michael J. Wolfe, Brian W. Baird, Richard S. Harris
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Patent number: RE43605Abstract: UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 ?m to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.Type: GrantFiled: January 9, 2009Date of Patent: August 28, 2012Assignee: Electro Scientific Industries, Inc.Inventors: James N. O'Brien, Lian-Cheng Zou, Yunlong Sun, Kevin P. Fahey, Michael J. Wolfe, Brian W. Baird, Richard S. Harris