Abstract: In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the first sublayer, while bordering on a second sublayer only in a comparatively narrow edge region of the cross-sectional area. The semiconductor system is characterized by a low bulk resistance and a high breakdown voltage in the edge region. In addition, a method for manufacturing this semiconductor system is specified.

Abstract: An electrical component, e.g., a press-in diode, is provided, which is suited for high currents and which ensures reverse-polarity protection. The electrical component includes at least one chip which is connected via soldering layers to a lead wire and a base. In the event of a rising temperature caused by polarity reversal, the clamp-type connection between the individual parts of the electrical component, e.g., the lead wire and the base, is released since the connecting plastic sheath softens, resulting in the release of the clamp-type connection, thereby interrupting the electrical connection and thus a current flow. At normal operating temperature, the clamp-type connection between the individual parts of the diode is ensured via a plastic sheath and a plastic sleeve, with bulges of the lead wire and the base protruding into the plastic sheath, thereby making the connection particularly stable.

Abstract: A semiconductor system having a pn transition and a method for manufacturing a semiconductor system are disclosed. The semiconductor system is designed in the form of a chip having an edge region, the semiconductor system includes a first layer of a first conductivity type and a second layer of a second conductivity type, which is of opposite polarity to the first conductivity type. The first layer has an edge region and a center region, the pn transition being provided between the first layer and the second layer. The second layer is more weakly doped in its edge region than in its center region, and the boundary surface of the pn transition at the edge region is non-parallel to the main chip plane.

Abstract: A rectifier assembly including a fusible cutout is configured as a polarity reversal protection device. The fusible cutout includes a semiconductor chip having a positive temperature coefficient so that when it overheats, it becomes unsoldered and interrupts the current flow.

Abstract: A diode system and a generator, uses Zener diodes. The diode system has AC voltage terminals and DC voltage terminals, in which the Zener diodes are operable in the forward direction to rectify an AC voltage present at the AC voltage terminals, in which a lower limit is provided for the Zener voltage of the Zener diodes, and in which the lower limit of the Zener voltage is provided so that it is lower than a preset lower DC voltage.

Abstract: A method is proposed for producing semiconductor components, in which at least one doped region is introduced in a wafer, a solid glass layer provided with dopant being applied on at least one of the two sides of a semiconductor wafer, in another step, the wafer being heated to high temperatures so that the dopant from the glass layer penetrates deep into the wafer to produce the at least one doped region; and in a further step, the glass layer being removed. The method is used for producing homogeneous, heavily doped regions, it also being possible to introduce these regions in the wafer on both sides and for the regions to be of different doping type.

Abstract: A polarity-reversal protector for power sources, in particular for automobile batteries, which is connected between a power source and at least one consumer and/or at least one generator, is described. The polarity-reversal protector is to prevent the reverse polarity current from flowing through the connected systems, so that the systems may not be damaged in case of polarity reversal. For this purpose, the polarity-reversal protector includes means for recognizing whether the two poles of the power source are connected to the appropriate terminals of the consumer and/or generator, and means for decoupling the power source from the consumer and/or from the generator if the two poles of the power source have been transposed during connection to the consumer and/or generator.

Abstract: A power converter having at least two semiconductor substrates is provided. Each of the substrates has at least two contact surfaces, and the converter also has two thermally conductive mounting plates carrying the semiconductor substrates, which each have an electrical terminal, an attachment arrangement implemented on one of the mounting plates, and having at least one third electrical terminal, which is distinguished in that the mounting plates and the semiconductor substrates form stacks, the mounting plates receiving the semiconductor substrates between themselves, and an electrically and thermally conductive insert, which has at least the third terminal, is arranged between the semiconductor substrates.

Abstract: The rectifier diode includes a press-fit base (12) including an axially extending substantially securing region (14) for a semiconductor chip (20); a head wire (24) attached to the semiconductor chip (20); an encapsulation (40) for at least an end portion (26) of the head wire (24) connected to the semiconductor chip (20); a collar (44) extending from a peripheral end portion (42) of the securing region (14), which extends axially beyond a securing face (16) of the securing region (14) and is inclined to an axis (50) of the securing region (14). The securing face (16) is closer to the head wire (24) than is an outer edge region (12′) of the press-fit base (12).

Abstract: A power converter (1) is described having at least two semiconductor substrates (15), each of which has at least two contact surfaces (16, 17), two thermally conductive mounting plates (11, 12), carrying the semiconductor substrates (15), which each have an electrical terminal (B+, B−), an attachment means (22) implemented on one of the mounting plates (11, 12), and having at least one third electrical terminal (U, V, W), which is distinguished in that the mounting plates (11, 12) and the semiconductor substrates (15) form stacks (20), the mounting plates (11, 12) receive the semiconductor substrates (15) between themselves, and an electrically and thermally conductive insert (18), which has at least the third terminal (U, V, W), is arranged between the semiconductor substrates (15).

Abstract: A rectifier assembly having a fusible cutout is described as a polarity reversal protection device. The fusible cutout includes a semiconductor chip having a positive temperature coefficient so that when it overheats, it becomes unsoldered and interrupts the current flow.

Abstract: A casting compound having a high thermal stability is described; as a one-component system, it is stable in storage and contains an epoxy resin component, a filler, and an initiator. The filler contains silanized fused silica.

Abstract: A three-phase bridge rectifier system is proposed, having three rectifier paths, in which two rectifier elements at a time are in series, each rectifier path between the rectifier elements being connectible to one of three leads of a three-phase current terminal; the three cathode terminals of the rectifier elements lying opposite the three-phase current connection are connected to an positive pole, and the three anode terminals of the rectifier elements lying opposite the three-phase current connection are connected to a negative pole; at least three of the rectifier elements being formed by two-pole semiconductor rectifiers having at least two series-connected p-n junctions. The system is used for making available a volt motor vehicle electrical system having assured reliable voltage limitation.

Abstract: It is proposed to implement the emitter short-circuit structure of a multilayer diode by providing grooves which cut through topmost layer 2 of the multilayer diode. A metal layer 20 applied thereon electrically shorts the topmost layer to subjacent layer 3.

Abstract: An arrangement having p-doped semiconductor layers and n-doped semiconductor layers which exhibits transitions between the p-doped semiconductor layers and n-doped semiconductor layers, the transitions displaying a Zener breakdown upon application of a voltage characteristic of a transition, a plurality of transitions between p-doped semiconductor layers and n-doped semiconductor layers being present, and the characteristic voltages additively make up the breakdown voltage of the entire arrangement. Also described is a method for manufacturing the arrangement.

Abstract: A rectifier diode has a base which is press-fittable into an intended opening of a rectifier arrangement, a pedestal disposed on the base integrally with the base, a semiconductor chip secured to the pedestal, a head wire secured to the chip, the base being formed to connect the diode thermally and electrically to the rectifier arrangement, and a unit for mechanically stabilizing the base and including a bulwark provided on a bottom of the base in a region of the pedestal and surrounding the pedestal, the bulwark being separated from the pedestal by a trench and being integral with the bottom of the base, a pressing region for absorbing forces oriented at right angles to a plane of the semiconductor chip and disposed on a side of the bulwark remote from the trench and between bulwark and a substantially cylindrical wall of the base disposed substantially perpendicular to the bottom of the base, the trench being located between the bulwark and the pedestal and having a radial extent that is approximately twice

Abstract: The use of a thermosetting epoxy resin blend as a casting compound for electronic or electrotechnical components. The blend contains a silicone-modified epoxy resin in which organic components containing epoxy groups are chemically bonded to silicone components, and a mineral filler, optionally silanized, that regulates the thermal expansion behavior, in an amount of 40 wt % to 75 wt %, based on the thermosetting epoxy resin blend. The thermosetting epoxy resin blends are used to particular advantage for casting diodes.

Abstract: A high-voltage breakover diode is proposed, which takes on the function of an ignition voltage distributor of an internal combustion engine having solid-state highvoltage distribution. The high-voltage breakover diode comprises a cascade of breakover diode chips, a polyimide layer having recesses in the region of the cathode connection being provided between the individual breakover diode chips produced using planar technology, in each case on the top of the breakover diode chips, and the mechanical and electrical connection of the individual breakover diode chips being effected by means of a conductive adhesive (FIG. 3).

Abstract: A rectifier arrangement for a three-phase generator having at least one power diode allocated to each half-wave of each phase and a cooling arrangement for the power diodes. The power diodes may be designed as diode chips and be arranged between two diametrically opposed heat sinks, while being oriented with respect to polarity and electrically and/or thermally conductive.

Abstract: Semiconductor arrangements, in particular diodes, have a p-layer and two n-layers that are doped to varying degrees of thickness. The p-n junction between the p-layer and the heavily doped n-layer is arranged in the chip so as to allow it to lie completely inside the chip. The p-n junction between the p-layer and the n-layer is situated in the outside areas of the chip. This arrangement does not permit any high field strengths to occur on the outside of the chip and, at the same time, it makes it possible for easily reproducible properties to be achieved. The manufacturing method can also be carried-out outside of a clean room.