Abstract: A process for manufacturing semiconductor components, especially diodes. The process entails first bonding two semiconductor wafers of different conducting types (p and n), according to a silicon-fusion bonding process (SFB), thereby forming a bonded wafer assembly with a p-n junction. The bonded wafers are then partitioned into a plurality of semiconductor elements by the cutting of grooves into the bonded wafers to a depth which extends at least to the p-n junction. Each of the plurality of semiconductor elements thus formed has an individual p-n junction with sides exposed by the grooves. The sides of the semiconductor elements are then subjected to etching and passivation. The upper and lower surfaces of the bonded wafer assembly are then metal-coated. Finally, the semiconductor elements are separated from each other by a sawing operation.

Abstract: An encapsulating resin composition for electrical and electronic components consists of cycloaliphatic epoxy resin, a hardener, an accelerator, a filler and, sometimes, a pigment. As a result of the combination of the cycloaliphatic epoxy resin with the provision of methylnadic anhydride as hardener and amporhous SiO.sub.2 as a filler, the material is capable of flowing at room temperature, is physiologically harmless and also otherwise well suited for mass production of a wide variety of electrical and electronic components, for example diodes and other semi-conductors for the motor vehicle industry. A small addition of hollow glass spherical particles counteracts sedimentation of amorphous SiO.sub.2 in pre-hardening storage of the resin.

Abstract: In making a power diode with high reverse voltage rating, corrosion of the silicon wafer surface by gettering substances is avoided by employing two different diffusion steps. In the first step, boron and phosphorus are respectively applied to opposing major surfaces of the disk-shaped semiconductor body (10) and driven into it by heating to a predetermined temperature. Gettering is employed to increase the charge carrier lifetime and thereby reduce the forward voltage drop of the diode. The gettering is carried out in a second diffusion step at a diffusion temperature sufficiently reduced with respect to the diffusion temperature of the first step to avoid significantly affecting the depth of diffusion of the doping substances into the semiconductor body.

Abstract: To reduce the size of a rectifier structure in a vehicular alternator-rectifier combination, a common carrier plate of essentially half-moon or sickle shape, having two wing portions separated by a central portion (31) retains two support plates (20) of essentially square outline. Groups of positive and negative diodes are located in the vicinity of the corners of the essentially square suppport plates, interconnected by connecting buses extending in chord relation with respect to the common carrier plate (22). Exciter or field diodes (13, 33) are positioned in the central portion, free from the support plates and the positive and negative diodes thereon. Four positive and negative diodes can be provided, in which a fourth diode pair (16) is connected to a star or center terminal of the alternator winding. The common carrier plate is formed with an upstanding rim so that the entire rectifier can be encapsulating in a potting or resin compound.