Abstract: A device is provided for registering and recording induced imbalance in a human subject. A horizontal platform is adapted for controlled, linear displacement in a horizontal plane to induce imbalance. Imbalance and response can be detected and recorded by means of electric contact shoes or other means.

Abstract: A device is provided for registering and recording induced imbalance in a human subject. A horizontal platform is adapted for controlled, linear displacement in a horizontal plane to induce imbalance. Imbalance and response can be detected and recorded by means of electric contact shoes or other means.

Abstract: A diagnostic test for environmental bacillus which comprises the steps of inoculating an agar growth medium comprising a nitrate source, luminol and 3-amino-L-tyrosine (3AT) with the sample, incubating the inoculated medium and determining the presence of the bacillus. The novel medium preferably comprises potassium nitrate, luminol, 3-amino-L-tyrosine and trypticase soy agar. Antibiotics and/or a specific bacteriophage may be added to the medium surface in localized areas to show specific bacterial lysis for identification. The novel medium and the methods of this invention are suitable for the identification of B. anthracis.

Abstract: A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacrificial wafer, after being subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by mean of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

Abstract: A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.

Abstract: The invention relates to a process for the preparation of low-carbon and low-silicon ferromanganese (refined ferromanganese) by blowing with pure oxygen in a converter ferromanganese of high carbon content (high-carbon ferromanganese) produced in a blast furnace. The characterizing feature of the invention is that in an oxidation phase oxygen is blown from above with a top blowing lance on to the melt of high-carbon ferromanganese melt, while at the same time an inert stirring gas is blown through tuyeres into the melt below its level, and on termination of oxygen top blowing, in an immediately following reduction phase, solid reducing agents and lumps of lime are added to the melt to recover the slagged manganese.

Abstract: The invention features a unique pH control system and method for maintaining the proper pH in a continuous process stream. The system backmixes a sample stream, which decreases the dynamic gain of the control system, and which allows for the ease of adding a controlled amount of reagent or buffer to the process stream on a continuous basis.

Abstract: A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.

Abstract: There is disclosed apparatus and methods of fabricating a piezoresistive semiconductor structure for use in a transducer. According to one method, a layer of silicon dioxide is grown over the surface of a first semiconductor wafer which is designated as a carrier wafer. A layer of glas is then formed on the top surface of the carrier wafer over said layer of silicon dioxide. A second wafer has diffused therein a high conductivity semiconductor layer which is diffused on a top surface of a sacrificial semiconductor wafer. The first and second wafers are then bonded together by means of an electrostatic bond with the high conductivity layer of the sacrificial wafer facing the glass layer of the first wafer. After securing the wafers together, one may etch away the remaining portion of the sacrificial wafer to provide a high conductivity resistive layer which is secured to the glass layer of the first wafer and is patterned to form a resistive network using standard photolithographic making.

Abstract: A voided polypropylene film tampon wrap having end seals which are formed by mechanical crimping and a process for sealing the ends of the voided polypropylene film tampon wrap by mechanical crimping. A notch is formed adjacent to each end seal but remote from the enclosed tampon. Each end seal is formed by a pair of horizontal teeth wheels each having a pitch of 50 teeth per inch. One of the pair of wheels is heated to a temperature of 125.degree..+-.15.degree., and force is applied to at least one wheel to seal that end of the wrap by the pair of wheels.

Abstract: An attachment for a corn harvester to pick up loose ears off the ground. In the embodiment described, novel pickup and conveyor mechanism are substituted for the forward, pointed snout members at the forward ends of the longitudinally extending hoods which are part of the row dividers in a conventional corn head and which define throats aligned with rows of corn. The attachment cooperates with the conventional stripper plates, gathering chains, and snapping rolls, making the harvester doubly effective in that it collects loose ears from the ground as well as picking them from the stalks.

Abstract: The invention relates to a vessel for the continuous treatment of molten metals under reduced pressure, according to the circulation process. In order to increase the through put of the molten metal, the inlet and outlet pipes are located on the longitudinal axis of an elongated vessel-bottom, for example an elliptical vessel-bottom, a cross-section of the inlet and outlet pipes being enlarged. The lower portion of the vessel is bell-shaped. With this geometry of the lower portion of the vessel, the volume of the vessel remains small, despite comparatively large cross-sections of the inlet and outlet pipes, which can be located with an adequate clearance from each other and the walls of the vessel, so that the danger of erosion effects resulting from the circulating molten metal remains small.

Abstract: A pressure transducer is formed on an N-type wafer of silicon by depositing on the wafer a P+ layer. A thin N-type layer is then formed on the P+ layer. The N layer which is relatively thin, will form a diaphragm for piezoresistors which are deposited on the N layer. The P+ layer acts as a stop to enable a central aperture to be formed or etched into the N wafer; which aperture defines an active deflecting area for the thin N-type diaphragm. The various layers are crystallographically homogeneous to enable the piezoresistors to exhibit high coefficients and hence, provide a sensitive transducer assembly.

Abstract: A device for determining the charge condition of a secondary electric storage battery, and including a digital integrator comprising a pulse generator for producing pulses at a frequency proportional to the magnitude of the instantaneous battery current, and an up-down counter for counting the pulses in a sense (i.e. up or down) dependent upon the battery current direction. A switching arrangement operates to couple selectively the pulse generator or an adjustment pulse generator to the counter, and a comparator controls the supply of pulses to, and the sense of counting in the counter, when the adjustment pulse generator is coupled thereto in accordance with the result of a comparison of the counter setting and of a function signal.

Abstract: Apparatus for indicating the charge condition of a secondary cell, comprising an integrating device which progressively sums the ampere-hours drawn from the cell, and a computer which is programmed to provide a voltage output whose magnitude indicates the total number of ampere-hours available, from the battery at the particular discharge current and temperature. A comparator subtracts from this a voltage derived in accordance with the output of the integrating device. The comparator output thus indicates the remaining ampere-hours available to be drawn from the cell at the prevailing conditions of discharge current and temperature. There may be provided a further computer which is programmed in accordance with the variation in minimum ampere-hour requirement of the cell to ensure that a particular load, e.g. a starting motor, can be successfully operated at various temperatures.