Abstract: An evaluation method according to an embodiment is to evaluate a precision of an aperture formed with multiple openings, and includes steps of forming a first evaluation pattern based on evaluation data using multiple electron beams generated by electron beam that has passed through the aperture, dividing the aperture into multiple regions, each of the regions including the multiple openings and defining the multiple divided regions, forming a second evaluation pattern based on evaluation data using the electron beam that has passed through a first divided region among the multiple divided regions, comparing the first evaluation pattern with the second evaluation pattern, and evaluating the precision of the aperture based on the comparison result between the first evaluation pattern and the second evaluation pattern.

Abstract: According to one embodiment, a method of adjusting a charged particle beam drawing apparatus includes obtaining an offset amount in beam size to be set in the charged particle beam drawing apparatus. The method includes forming a linear evaluation pattern on a substrate by changing number of divisions of a beam with a predetermined size and performing drawing by using divided beams, obtaining a change amount in a line width of the evaluation pattern from a design dimension for each number of divisions, and calculating the offset amount by fitting a model function to the change amount for each number of divisions, the model function being obtained by modeling a pattern line width based on a distribution of energy given by charged particle beams.

Abstract: According to one embodiment, a method of adjusting a charged particle beam drawing apparatus includes obtaining an offset amount in beam size to be set in the charged particle beam drawing apparatus. The method includes forming a linear evaluation pattern on a substrate by changing number of divisions of a beam with a predetermined size and performing drawing by using divided beams, obtaining a change amount in a line width of the evaluation pattern from a design dimension for each number of divisions, and calculating the offset amount by fitting a model function to the change amount for each number of divisions, the model function being obtained by modeling a pattern line width based on a distribution of energy given by charged particle beams.

Abstract: A method for acquiring a settling time includes forming, using a deflector, a reference pattern so that a deflection movement amount of the beam may be smaller than an evaluation deflection movement amount; forming, while variably setting the settling time of the DAC amplifier, an evaluation pattern such that both ends of the width dimension of the evaluation pattern being the same design width dimension as that of the reference pattern, for each of times set variably, such that a deflection movement amount of a second beam shot of two beam shots successively shot is equivalent to the evaluation deflection movement amount; calculating a difference between the width dimension of the evaluation pattern concerned and that of the reference pattern, for each of the times set variably; and acquiring a settling time of the DAC amplifier necessary for the deflection movement amount, using the difference.

Abstract: A method for acquiring a settling time includes forming, using a deflector, a reference pattern so that a deflection movement amount of the beam may be smaller than an evaluation deflection movement amount; forming, while variably setting the settling time of the DAC amplifier, an evaluation pattern such that both ends of the width dimension of the evaluation pattern being the same design width dimension as that of the reference pattern, for each of times set variably, such that a deflection movement amount of a second beam shot of two beam shots successively shot is equivalent to the evaluation deflection movement amount; calculating a difference between the width dimension of the evaluation pattern concerned and that of the reference pattern, for each of the times set variably; and acquiring a settling time of the DAC amplifier necessary for the deflection movement amount, using the difference.

Abstract: A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by combination of the first and second shots of a charged particle beam shaped to first and second patterns of different sizes and whose width size is the same as that of the reference pattern, while changing, concerning beam shaping of the second shot, a settling time of a DAC amplifier, wherein writing is performed for each settling time, measuring the width size of the reference pattern, measuring the width size of the evaluation pattern for each settling time, calculating, for each settling time, a difference between the width sizes of the reference and evaluation patterns, and acquiring a settling time from each settling time of the DAC amplifier when the difference is not exceeding a threshold value.

Abstract: A settling time acquisition method includes writing at least one reference pattern formed by at least one shot of a charged particle beam, writing an evaluation pattern, which has been formed by combination of the first and second shots of a charged particle beam shaped to first and second patterns of different sizes and whose width size is the same as that of the reference pattern, while changing, concerning beam shaping of the second shot, a settling time of a DAC amplifier, wherein writing is performed for each settling time, measuring the width size of the reference pattern, measuring the width size of the evaluation pattern for each settling time, calculating, for each settling time, a difference between the width sizes of the reference and evaluation patterns, and acquiring a settling time from each settling time of the DAC amplifier when the difference is not exceeding a threshold value.

Abstract: A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.

Abstract: An acquisition method of a charged particle beam deflection shape error includes writing a plurality of figure patterns, each smaller than a deflection region of a plurality of deflection regions, with charged particle beams, at a pitch different from an arrangement pitch of the plurality of deflection regions to be deflected by a deflector that deflects the charged particle beams, synthesizing writing positions of the plurality of figure patterns into one virtual deflection region of the same size as the deflection region, based on a positional relationship between the deflection region including a position where a figure pattern concerned of the plurality of figure patterns has been written and the position where the figure pattern concerned has been written, and calculating, to output, a shape error in the case of writing a pattern in the deflection region, using a synthesized writing position of each of the plurality of figure patterns.

Abstract: A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.

Abstract: A method for acquiring a settling time according to an embodiment, includes writing a plurality of first patterns, arranged in positions apart from each other by a deflection movement amount, by using a DAC amplifier in which a settling time of the DAC amplifier is set to a first time to be a sufficient settling time; writing a plurality of second patterns, in a manner where corresponding first and second patterns are in a position adjacent, for each second time of different second times containing the sufficient settling time set as variable; measuring a width dimension of each of a plurality of combined patterns after adjacent first and second patterns are combined for the each second time set as variable; and acquiring the settling time of the DAC amplifier needed for deflection by the deflection movement amount, using the width dimensions.

Abstract: An acquisition method of a charged particle beam deflection shape error includes writing a plurality of figure patterns, each smaller than a deflection region of a plurality of deflection regions, with charged particle beams, at a pitch different from an arrangement pitch of the plurality of deflection regions to be deflected by a deflector that deflects the charged particle beams, synthesizing writing positions of the plurality of figure patterns into one virtual deflection region of the same size as the deflection region, based on a positional relationship between the deflection region including a position where a figure pattern concerned of the plurality of figure patterns has been written and the position where the figure pattern concerned has been written, and calculating, to output, a shape error in the case of writing a pattern in the deflection region, using a synthesized writing position of each of the plurality of figure patterns.

Abstract: A charged particle beam drawing method according to an embodiment is a method including forming a first measurement pattern in a first measurement pattern area; in succession with processing of forming the first measurement pattern, forming a second measurement pattern in a second measurement pattern area located farthest from the first measurement pattern area in the same column as the first measurement pattern area; and in moving a charged particle beam from the second measurement pattern area to a third measurement pattern area located adjacent to the first measurement pattern area in the same column as the first and second measurement patterns to form a third measurement pattern, moving the charged particle beam to the third measurement pattern area while taking tiny shots approximately equivalent to a data resolution at the adjacent measurement pattern areas to be drawn in the same column one after another from the second measurement pattern.

Abstract: A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Abstract: A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing.

Abstract: An electron beam is moved a long distance along a straight line from a sub-deflection region 101a to a diagonally opposite sub-deflection region 123w by main deflection of the beam, and a pattern P is written in the sub-deflection region 123w. The former writing step is repeated a plurality of times each with a different main deflection settling time, thereby writing a plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured. Further, the latter writing step is also repeated a plurality of times each with a different main deflection settling time, thereby writing another plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured.

Abstract: In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

Abstract: An electron beam lithography method is provided for sequentially irradiating an electron beam deflected by a deflector on a shot-by-shot basis to draw a pattern on a surface of a sample mounted on a stage. This method includes the step of irradiating the electron beam on the sample surface as a combination of shots each irradiated in one of rectangular or square regions having the same area and different shapes, in order to draw a correction pattern. This method also includes the steps of correcting the shape of the electron beam based on the drawn correction pattern, and drawing a pattern using the shape-corrected electron beam.

Abstract: A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50˜5000 A/cm2, said photo acid generator is in an amount ranging from 0.

Abstract: The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern. A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.