Abstract: A method of obtaining a deflection aberration correcting voltage. The method includes writing predetermined patterns at a plurality of focus height positions such that a dose is used as a variable. Dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions such that the dose is used as the variable are measured. Further, effective resolutions of the written predetermined patterns are calculated by using the dimensional variations. The method further includes, on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and outputting the correcting voltage. The correcting voltage is used when a charged particle beam is deflected.

Abstract: A correcting substrate for a charged particle beam lithography apparatus includes a substrate body using a low thermal expansion material having a thermal expansion lower than that of a silicon oxide (SiO2) material; a first conductive film arranged above the substrate; and a second conductive film selectively arranged on the first conductive film and having a reflectance higher than the first conductive film, wherein the low thermal expansion material is exposed on a rear surface of the correcting substrate.

Abstract: A timing control circuit controls the timing for applying a voltage to a sub deflector when changing a position to be irradiated with the charged-particle beam. A control computer compares a target line width and a line width of a pattern written with the timing for applying voltage to the sub deflector changed, and determines appropriate timing for applying voltage to the sub deflector from a timing range corresponding to a predetermined allowable range of the difference between the target line width and the line width of the written pattern. The control computer then controls the timing control circuit based on the determined timing.

Abstract: The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern. A positional displacement amount near the center of each main deflection area of the charged-particle beam is determined. Correction values are determined from a plurality of the positional displacement amounts. A position irradiated with the charged-particle beam is corrected from the correction values. The neighborhood of the center of the main deflection area can be a sub deflection area including the center of the main deflection area. In this case, the positional displacement amount can be one for one arbitrary point in the sub deflection area. Alternatively, the Positional displacement amount can also be the average of positional displacement amounts at a plurality of arbitrary points in the sub deflection area.

Abstract: An electron beam lithography method is provided for sequentially irradiating an electron beam deflected by a deflector on a shot-by-shot basis to draw a pattern on a surface of a sample mounted on a stage. This method includes the step of irradiating the electron beam on the sample surface as a combination of shots each irradiated in one of rectangular or square regions having the same area and different shapes, in order to draw a correction pattern. This method also includes the steps of correcting the shape of the electron beam based on the drawn correction pattern, and drawing a pattern using the shape-corrected electron beam.

Abstract: In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control, portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

Abstract: The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system. The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.

Abstract: A method of calculating a deflection aberration correcting voltage includes writing predetermined patterns at a plurality of focus height positions measuring dimensional variations of width sizes of the predetermined patterns written at the plurality of focus height positions, calculating effective resolutions of the written predetermined patterns by using the dimensional variations, and on the basis of a focus height position at which a minimum effective resolution of the predetermined patterns is obtained, calculating a correcting voltage to correct deflection aberration and output the correcting voltage, wherein the correcting voltage is used when a charged particle beam is deflected.