Patents by Inventor Rina Tanaka

Rina Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE
    Publication number: 20150048384
    Abstract: In a JBS diode using a wide band gap semiconductor, the wide band gap semiconductor has a large built-in voltage, which sometimes causes difficulties for the pn diode portion to turn on, resulting in a problem that resistance to surge currents is not sufficiently ensured. In order to solve this problem, in the wide-band-gap JBS diode, a pn junction of the pn diode is formed away from the Schottky electrode, and well regions are formed so as to have a width narrowed at a portion away from the Schottky electrode.
    Type: Application
    Filed: February 26, 2013
    Publication date: February 19, 2015
    Applicant: Mitsubishi Electric Corporation
    Inventors: Rina Tanaka, Akihiko Furukawa, Masayuki Imaizumi, Yuji Abe