Abstract: Semiconductor structures having a first layer including an n-type III-V semiconductor material and a second layer including an M(InP)(InGaAs) alloy, wherein M is selected from Ni, Pt, Pd, Co, Ti, Zr, Y, Mo, Ru, Ir, Sb, In, Dy, Tb, Er, Yb, and Te, and combinations thereof, are disclosed. The semiconductor structures have a substantially planar interface between the first and second layers. Methods of fabricating semiconductor structures, and methods of reducing interface roughness and/or sheet resistance of a contact are also disclosed.

Abstract: A method of constructing an electrical contact on an electronic component comprises first forming a protruding electrically conducting stud at a contact location by wire bonding a metal wire to a contact pad of the component. The stud is then contacted with solder, without using a mask, so that a solder bump is deposited on and adheres to the metal stud to form a composite solder contact which is able to form with a contact of another component a solder joint which has good electrical and mechanical properties and which may be reliable fabricated at high density by a low cost method. An electronic component provided with such solder contacts and an electronics component package including such a component are also disclosed.

Abstract: A method of constructing an electrical contact on an electronic component comprises first forming a protruding electrically conducting stud at a contact location by wire bonding a metal wire to a contact pad of the component. The stud is then contacted with solder, without using a mask, so that a solder bump is deposited on and adheres to the metal stud to form a composite solder contact which is able to form with a contact of another component a solder joint which has good electrical and mechanical properties and which may be reliable fabricated at high density by a low cost method. An electronic component provided with such solder contacts and an electronics component package including such a component are also disclosed.