Patents by Inventor Risako Miyoshi

Risako Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11231313
    Abstract: A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: January 25, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Patent number: 10876870
    Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: December 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Masaaki Nagase, Satoru Yamashita, Yohei Sawada, Kouji Nishino, Nobukazu Ikeda
  • Patent number: 10871786
    Abstract: A substrate processing system includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: December 22, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Risako Miyoshi, Norihiko Amikura, Kazuyuki Miura, Hiroshi Yazaki, Yasuhiro Shoji
  • Patent number: 10859426
    Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 8, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi, Shinobu Onodera
  • Patent number: 10845119
    Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: November 24, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Hirose, Norihiko Amikura, Risako Miyoshi
  • Patent number: 10788356
    Abstract: A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: September 29, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Patent number: 10692744
    Abstract: In one embodiment, a vaporizer is connected to a chamber of a substrate processing apparatus through a gas supply line and a gas introduction port. An exhaust device is connected to the gas supply line. The substrate processing apparatus includes a pressure sensor that obtains a measurement value of a pressure of the gas supply line. A method according to the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line, and monitoring a change of the measurement value obtained by the pressure sensor in a state in which supply of the processing gas to the gas supply line is stopped.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Risako Miyoshi
  • Patent number: 10692743
    Abstract: In one embodiment, a gas supply line is connected to a chamber of a substrate processing apparatus. A vaporizer is connected to the gas supply line. A flow rate controller is connected to the gas supply line in parallel with the vaporizer through a secondary valve. A primary valve is provided on a primary side of the flow rate controller. A method of the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line in a state in which the primary valve is closed, the secondary valve is opened, and an exhaust device is operated to set a pressure of the chamber to a predetermined pressure and determining a time-average value of a measurement value obtained by a pressure sensor of the flow rate controller while the supplying the processing gas is performed.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: June 23, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Risako Miyoshi
  • Publication number: 20190301912
    Abstract: A substrate processing system according to an exemplary embodiment includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.
    Type: Application
    Filed: March 22, 2019
    Publication date: October 3, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Hiroshi YAZAKI, Yasuhiro SHOJI
  • Patent number: 10424466
    Abstract: The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: September 24, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20190212176
    Abstract: A substrate processing system includes a gas supply unit having a first gas flow channel. A second gas flow channel of a flow rate measurement system is connected to the first gas flow channel. The flow rate measurement system further includes a third gas flow channel connected to the second gas flow channel, and a pressure sensor and a temperature sensor that measure a pressure and a temperature, respectively, in the third gas flow channel. In a method of an embodiment, a flow rate of a gas output from a flow rate controller of the gas supply unit is calculated using a build-up method. The flow rate of a gas is calculated without using the total volume of the first gas flow channel and the second gas flow channel and temperatures in the first gas flow channel and the second gas flow channel.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 11, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Risako MIYOSHI, Norihiko AMIKURA, Kazuyuki MIURA, Masaaki NAGASE, Satoru YAMASHITA, Yohei SAWADA, Kouji NISHINO, Nobukazu IKEDA
  • Patent number: 10274972
    Abstract: A flow rate of a gas supplied into a processing vessel of a substrate processing apparatus is controlled according to a set flow rate of a first flow rate controller. The gas is also supplied into a second flow rate controller. When an output flow rate of the first flow rate controller is in a steady state, a first pressure measurement value of a first pressure gauge and a second pressure measurement value of a second pressure gauge of the second flow rate controller are obtained. A difference absolute value between the first pressure measurement value and a reference pressure value and a difference absolute value between the second pressure measurement value and a reference pressure value are calculated, and then, an average value of the difference absolute values is calculated. The difference absolute values and the average value are respectively compared with a first to third threshold value.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: April 30, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20190063987
    Abstract: Disclosed is a method of inspecting a flow rate measuring system used in a substrate processing system. The flow rate measuring system provides a gas flow path used for calculating a flow rate in a build-up method. A gas output by a flow rate controller of a gas supply unit of the substrate processing system may be supplied to the gas flow path. In the method, apart from a previously obtained initial value of a volume of the gas flow path, a volume of the gas flow path is obtained at the time of inspection of the flow rate measuring system. Then, the obtained volume is compared to the initial value.
    Type: Application
    Filed: August 30, 2018
    Publication date: February 28, 2019
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun HIROSE, Norihiko AMIKURA, Risako MIYOSHI, Shinobu ONODERA
  • Patent number: 10168049
    Abstract: Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: January 1, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Norikazu Sasaki, Risako Miyoshi
  • Publication number: 20180374726
    Abstract: In one embodiment, a gas supply line is connected to a chamber of a substrate processing apparatus. A vaporizer is connected to the gas supply line. A flow rate controller is connected to the gas supply line in parallel with the vaporizer through a secondary valve. A primary valve is provided on a primary side of the flow rate controller. A method of the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line in a state in which the primary valve is closed, the secondary valve is opened, and an exhaust device is operated to set a pressure of the chamber to a predetermined pressure and determining a time-average value of a measurement value obtained by a pressure sensor of the flow rate controller while the supplying the processing gas is performed.
    Type: Application
    Filed: June 18, 2018
    Publication date: December 27, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Risako MIYOSHI
  • Publication number: 20180374727
    Abstract: In one embodiment, a vaporizer is connected to a chamber of a substrate processing apparatus through a gas supply line and a gas introduction port. An exhaust device is connected to the gas supply line. The substrate processing apparatus includes a pressure sensor that obtains a measurement value of a pressure of the gas supply line. A method according to the embodiment includes supplying a processing gas to the chamber from the vaporizer through the gas supply line, and monitoring a change of the measurement value obtained by the pressure sensor in a state in which supply of the processing gas to the gas supply line is stopped.
    Type: Application
    Filed: June 18, 2018
    Publication date: December 27, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Risako MIYOSHI
  • Publication number: 20180299908
    Abstract: A method of obtaining the output flow rate of the flow rate controller according to an aspect is provided. The method including a first step of outputting gas whose flow rate is adjusted according to a designated set flow rate from the flow rate controller, in a state where the diaphragm mechanism is opened; a second step of adjusting the diaphragm mechanism so that the pressure in the second pipe is the target pressure value, in a state where the output of gas from the flow rate controller is continued in the first step; and a third step of obtaining the output flow rate of the flow rate controller by using a pressure value and a temperature value in the tank, after the pressure in the second pipe is set to the target pressure value in the second step.
    Type: Application
    Filed: April 17, 2018
    Publication date: October 18, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MIYOSHI
  • Patent number: 10031007
    Abstract: A gas, whose flow rate is adjusted by a flow rate controller as a measurement target, is supplied into a processing vessel in a state that a third valve of the gas supply system provided at an upstream side of the processing vessel is opened. While the gas is continuously supplied, the third valve is closed after a pressure measurement value of a pressure gauge within a flow rate controller for pressure measurement is stabilized. After the third valve is closed, an output flow rate of the flow rate controller as the measurement target is calculated from a previously known volume of the gas supply system in which the gas supplied through the flow rate controller as the measurement target is collected and a rise rate of the pressure measurement value of the pressure gauge within the flow rate controller for pressure measurement with respect to time.
    Type: Grant
    Filed: September 12, 2016
    Date of Patent: July 24, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20180073911
    Abstract: A method according to an aspect includes a first step of connecting a reference device to the other end of a connecting pipe, a second step of supplying a gas from one flow controller into piping, a third step of acquiring measured values of a first pressure gauge and a first thermometer, a fourth step of supplying a portion of the gas in piping into a tank, a fifth step of acquiring measured values of the first pressure gauge and the first thermometer or measured values of a second pressure gauge and a second thermometer, and a sixth step of using a Boyle-Charles' law to calculate a volume of the piping on the basis of the measured values acquired in the third step, the measured values acquired in the fifth step, and a volume of a closed space including a space in the tank when the third valve is closed.
    Type: Application
    Filed: September 13, 2017
    Publication date: March 15, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MIYOSHI
  • Publication number: 20180053637
    Abstract: The present disclosure provides a method for inspecting a shower plate of a plasma processing apparatus. In the plasma processing apparatus, a gas ejection unit includes a shower plate. A plurality of gas ejection holes are formed on the shower plate. This method includes (i) setting a flow rate of gas output from a first flow rate controller, and (ii) acquiring a measurement value indicating a pressure in a flow path inside a second pressure control type flow rate controller by using a pressure gauge of the second flow rate controller in a state where the gas output from the first flow rate controller at the set flow rate is supplied to the gas ejection unit and branched between the first flow rate controller and the gas ejection unit so as to be supplied to the flow path inside the second flow rate controller.
    Type: Application
    Filed: August 18, 2017
    Publication date: February 22, 2018
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MIYOSHI