Patents by Inventor Risako Miyoshi

Risako Miyoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170261258
    Abstract: A method includes a step of increasing or decreasing a flow rate of a gas of the a second gas supply system, by a predetermined time from a start of a gas treatment step of the process recipe or a by a predetermined time before a start of the gas treatment step, by using apparatus information regarding a first gas supply system of the first substrate treatment apparatus and the second gas supply system of the second substrate treatment apparatus, and arranging the treatment process, and in this step, the treatment process of the second substrate treatment apparatus performed using the process recipe conforms to the treatment process of the first substrate treatment apparatus performed using the process recipe.
    Type: Application
    Filed: March 6, 2017
    Publication date: September 14, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jun HIROSE, Norihiko AMIKURA, Risako MIYOSHI
  • Publication number: 20170074694
    Abstract: A gas, whose flow rate is adjusted by a flow rate controller as a measurement target, is supplied into a processing vessel in a state that a third valve of the gas supply system provided at an upstream side of the processing vessel is opened. While the gas is continuously supplied, the third valve is closed after a pressure measurement value of a pressure gauge within a flow rate controller for pressure measurement is stabilized. After the third valve is closed, an output flow rate of the flow rate controller as the measurement target is calculated from a previously known volume of the gas supply system in which the gas supplied through the flow rate controller as the measurement target is collected and a rise rate of the pressure measurement value of the pressure gauge within the flow rate controller for pressure measurement with respect to time.
    Type: Application
    Filed: September 12, 2016
    Publication date: March 16, 2017
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20170075361
    Abstract: A flow rate of a gas supplied into a processing vessel of a substrate processing apparatus is controlled according to a set flow rate of a first flow rate controller. The gas is also supplied into a second flow rate controller. When an output flow rate of the first flow rate controller is in a steady state, a first pressure measurement value of a first pressure gauge and a second pressure measurement value of a second pressure gauge of the second flow rate controller are obtained. A difference absolute value between the first pressure measurement value and a reference pressure value and a difference absolute value between the second pressure measurement value and a reference pressure value are calculated, and then, an average value of the difference absolute values is calculated. The difference absolute values and the average value are respectively compared with a first to third threshold value.
    Type: Application
    Filed: September 13, 2016
    Publication date: March 16, 2017
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Patent number: 9240307
    Abstract: Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: January 19, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Patent number: 9236230
    Abstract: It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.
    Type: Grant
    Filed: May 30, 2012
    Date of Patent: January 12, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yoshiyuki Kato, Norihiko Amikura, Risako Miyoshi, Kimihiro Fukasawa
  • Publication number: 20150330631
    Abstract: Disclosed is a plasma processing apparatus in which a main control unit is capable of managing the processing situation of an exhaust gas in an exhaust gas processing unit through a dilution controller. The exhaust gas processing unit includes a detoxifying device connected to the outlet of a vacuum pump through an exhaust pipe, a dilution gas source connected to the exhaust pipe near the outlet of the vacuum pump through a dilution gas supply pipe, an MFC and an opening/closing valve installed at the middle of the dilution gas supply pipe, a gas sensor attached to the exhaust pipe on the downstream side of an end (node N) of the dilution gas supply pipe, and a dilution controller configured to control the MFC.
    Type: Application
    Filed: April 29, 2015
    Publication date: November 19, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Norikazu SASAKI, Risako MIYOSHI
  • Publication number: 20140203702
    Abstract: Disclosed is a plasma processing apparatus including a mounting table within a processing container. The mounting table includes a lower electrode. A shower head constituting an upper electrode is provided above the mounting table. A gas inlet tube is provided above the shower head. The shower head includes a plurality of downwardly opened gas ejection holes, and first and second separate gas diffusion chambers on the gas ejection holes. The first gas diffusion chamber extends along a central axis that passes through a center of the mounting table. The second gas diffusion chamber extends circumferentially around the first gas diffusion chamber. The gas inlet tube includes a cylindrical first tube wall and a cylindrical second tube wall provided outside the first tube wall, and defines a first gas inlet path inside the first tube wall, and a second gas inlet path between the first and second tube walls.
    Type: Application
    Filed: January 23, 2014
    Publication date: July 24, 2014
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MIYOSHI
  • Patent number: 8597401
    Abstract: An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: December 3, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Norihiko Amikura, Risako Miyoshi
  • Publication number: 20120305188
    Abstract: It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.
    Type: Application
    Filed: May 30, 2012
    Publication date: December 6, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Yoshiyuki KATO, Norihiko AMIKURA, Risako MIYOSHI, Kimihiro FUKASAWA
  • Publication number: 20120031266
    Abstract: An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time.
    Type: Application
    Filed: August 8, 2011
    Publication date: February 9, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Norihiko AMIKURA, Risako MIYOSHI
  • Publication number: 20070160447
    Abstract: A semiconductor treating device (1) includes treating chamber (2) connected to a common transportation chamber (8) and treating a substrate (W) to be treated. A gas supply system (40) for supplying system (40) for supplying a predetermined gas to each of the treating chambers (2) is attached to each chamber. The gas supply system (40) has a primary side connection unit (23) connected to the source of the predetermined gas and has a flow rate control unit (13). The primary side connection unit (23) connected to the source of the predetermined gas and has a flow rate control unit (13). The primary side connection unit (23) is placed on the lower side of the corresponding treating chamber (2). The flow rate control unit (13) is placed on a gas line for supplying the gas from the primary side connection unit (23) to the corresponding treating chamber (2). The flow rate control unit (13) is provided such that at least a part of it is superposed on the upper side of the primary side connection unit (23).
    Type: Application
    Filed: February 4, 2005
    Publication date: July 12, 2007
    Applicant: Tokyo Electron Limited
    Inventors: Norihiko Amikura, Kazuyuki Tezuka, Risako Miyoshi