Patents by Inventor Risako Ueno

Risako Ueno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11189746
    Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: November 30, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Yuki Nobusa, Jiro Yoshida
  • Patent number: 10600930
    Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: March 24, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiro Suzuki, Risako Ueno, Hiroto Honda, Koichi Ishii, Toshiya Yonehara, Hideyuki Funaki
  • Publication number: 20190088814
    Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.
    Type: Application
    Filed: February 28, 2018
    Publication date: March 21, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Risako UENO, Kazuhiro SUZUKI, Yuki NOBUSA, Jiro YOSHIDA
  • Patent number: 9857594
    Abstract: An optical device includes a light-shielding layer and a microlens array. The light-shielding layer includes a plurality of openings. The microlens array is divided into a plurality of microlenses corresponding to the respective plurality of openings. A refractive index of the microlens array is variable so that light is incident on the microlenses is focused on the respective plurality of openings. A portion where light is focused includes a central position of the corresponding opening.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: January 2, 2018
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuko Kizu, Yukio Kizaki, Honam Kwon, Machiko Ito, Risako Ueno, Mitsuyoshi Kobayashi, Koichi Ishii, Satoshi Takayama, Tsutomu Nakanishi, Takashi Sasaki, Ryosuke Nonaka, Tomoya Tsuruyama
  • Patent number: 9791599
    Abstract: According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.
    Type: Grant
    Filed: March 16, 2015
    Date of Patent: October 17, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuyoshi Kobayashi, Risako Ueno, Kazuhiro Suzuki, Honam Kwon, Hideyuki Funaki
  • Patent number: 9781311
    Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: October 3, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yuko Kizu, Machiko Ito, Yukio Kizaki, Honam Kwon, Hideyuki Funaki, Kazuhiro Suzuki, Risako Ueno, Mitsuyoshi Kobayashi, Hiroto Honda
  • Publication number: 20170263793
    Abstract: A photodetector according to an embodiment includes: a semiconductor substrate including a first region and a second region adjacent to the first region; at least one light detection cell including a first semiconductor layer disposed in the first region, a second semiconductor layer disposed between the first semiconductor layer and the semiconductor substrate and including a junction portion with the first semiconductor layer, a third semiconductor layer disposed in the semiconductor substrate separately from the second semiconductor layer, a first electrode on the semiconductor substrate and applying a voltage to the first semiconductor layer, and a second electrode on the semiconductor substrate and applying a voltage to the third semiconductor layer; and a light guide disposed in the second region and guiding incident light to be propagated in a first direction to the junction portion between the first semiconductor layer and the second semiconductor layer.
    Type: Application
    Filed: December 20, 2016
    Publication date: September 14, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Risako UENO, Kazuhiro SUZUKI, Hiroto HONDA, Koichi ISHll, Hideyuki FUNAKI
  • Publication number: 20170263798
    Abstract: A photodetector according to an embodiment includes: a first semiconductor layer; a porous semiconductor layer disposed on the first semiconductor layer; and at least one photo-sensing element including a second semiconductor layer of a first conductivity type disposed in a region of the porous semiconductor layer and a third semiconductor layer of a second conductivity type disposed on the second semiconductor layer.
    Type: Application
    Filed: December 20, 2016
    Publication date: September 14, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiro SUZUKI, Risako UENO, Hiroto HONDA, Koichi ISHll, Toshiya YONEHARA, Hideyuki FUNAKI
  • Patent number: 9691932
    Abstract: According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: June 27, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Keita Sasaki, Risako Ueno, Hideyuki Funaki
  • Patent number: 9645290
    Abstract: According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: May 9, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuyoshi Kobayashi, Risako Ueno, Kazuhiro Suzuki, Hiroto Honda, Honam Kwon, Hideyuki Funaki
  • Patent number: 9596402
    Abstract: According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: March 14, 2017
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuyoshi Kobayashi, Risako Ueno, Kazuhiro Suzuki, Hiroto Honda, Honam Kwon, Hideyuki Funaki
  • Patent number: 9479760
    Abstract: According to one embodiment, a solid state imaging device includes a first imaging device, a second imaging device, and a calculating unit. The first imaging device includes a first optical system, a first imaging unit, and a second optical system provided between the first optical system and the first imaging unit. The second imaging device includes a third optical system, a second imaging unit, and a fourth optical system provided between the third optical system and the second imaging unit. The calculating unit is configured to perform a first calculation and a second calculation. The first calculation includes deriving a first distance from stereo disparity. The second calculation includes deriving a second distance from a parallax image. The calculating unit is configured to estimate a target distance based on at least one selected from the first distance and the second distance.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: October 25, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kazuhiro Suzuki, Risako Ueno, Mitsuyoshi Kobayashi, Honam Kwon, Hideyuki Funaki
  • Patent number: 9462166
    Abstract: A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: October 4, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Honam Kwon, Kazuhiro Suzuki, Hiroto Honda, Risako Ueno, Mitsuyoshi Kobayashi, Yuko Kizu, Machiko Ito, Hideyuki Funaki
  • Publication number: 20160254309
    Abstract: An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.
    Type: Application
    Filed: September 2, 2015
    Publication date: September 1, 2016
    Inventors: Risako UENO, Koichi ISHll, Kazuhiro SUZUKI, Hideyuki FUNAKI
  • Patent number: 9431454
    Abstract: An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: August 30, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Koichi Ishii, Kazuhiro Suzuki, Hideyuki Funaki
  • Publication number: 20160223817
    Abstract: An optical device includes a light-shielding layer and a microlens array. The light-shielding layer includes a plurality of openings. The microlens array is divided into a plurality of microlenses corresponding to the respective plurality of openings. A refractive index of the microlens array is variable so that light is incident on the microlenses is focused on the respective plurality of openings. A portion where light is focused includes a central position of the corresponding opening.
    Type: Application
    Filed: January 29, 2016
    Publication date: August 4, 2016
    Inventors: Yuko Kizu, Yukio Kizaki, Honam Kwon, Machiko Ito, Risako Ueno, Mitsuyoshi Kobayashi, Koichi Ishii, Satoshi Takayama, Tsutomu Nakanishi, Takashi Sasaki, Ryosuke Nonaka, Tomoya Tsuruyama
  • Patent number: 9383549
    Abstract: According to an embodiment, an imaging system includes an image sensor, an imaging lens, a microlens array, an irradiator, a distance information acquiring unit, and a controller. The microlens array includes multiple microlenses arranged with a predetermined pitch, the microlenses being respectively associated with pixel blocks. The irradiator emits light to project a pattern onto an object. The distance information acquiring unit acquires information on the distance in the depth direction to the object on the basis of a signal resulting from photoelectric conversion performed by the image sensor. The controller controls the irradiator so that images contained in a pattern that is reflected by the object and scaled down on the image sensor by the imaging lens and the microlenses are smaller than the arrangement pitch of images each formed on the image sensor by each microlens and larger than twice the pixel.
    Type: Grant
    Filed: March 6, 2015
    Date of Patent: July 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Risako Ueno, Kazuhiro Suzuki, Mitsuyoshi Kobayashi, Honam Kwon, Hideyuki Funaki
  • Patent number: 9377540
    Abstract: A radiation detection apparatus according to an embodiment includes: a scintillator; a photon detection device array including a plurality of cells each being a photon detection device with an avalanche photodiode configured to detect visible radiation photons emitted from the scintillator and a resistor disposed along a part of a periphery of an active region of the avalanche photodiode; and a reflector configured to reflect a visible radiation photon and disposed in a region that does not include the active regions and the resistors of the cells, on a face including the active regions.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: June 28, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Go Kawata, Hideyuki Funaki, Honam Kwon, Risako Ueno, Kazuhiro Suzuki
  • Patent number: 9300885
    Abstract: A solid state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and including pixel blocks each having pixels; a main lens forming an image of a subject on an imaging plane; a microlens array including microlenses corresponding to the pixel blocks, the microlens array reducing an image to be formed on the imaging plane by Nf times or less and forming reduced images on the pixel blocks corresponding to the respective microlenses; and an image processing unit enlarging and synthesizing the reduced images formed by the microlenses, the solid state imaging device meeting conditions of an expression MTFMain(u)?MTFML(u)?MTFMain(u├ŚNf) where u denotes an image spatial frequency, MTFML(u) denotes an MTF function of the microlenses, and MTFMain(u) denotes an MTF function of the main lens.
    Type: Grant
    Filed: January 23, 2014
    Date of Patent: March 29, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Risako Ueno, Hiroto Honda, Mitsuyoshi Kobayashi, Kazuhiro Suzuki, Honam Kwon, Hideyuki Funaki
  • Publication number: 20160079464
    Abstract: According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.
    Type: Application
    Filed: August 31, 2015
    Publication date: March 17, 2016
    Inventors: Keita SASAKI, Risako UENO, Hideyuki FUNAKI