Abstract: Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: Fabrication methods for a 3D multipath inductor, including forming a metal layer to form spiral turns about a center region, the spiral turns including segments that extend length-wise along the turns and having positions that vary from an innermost position and an outermost position relative to the center region; forming a lateral cross-over configured to couple portions of lateral segments in different relative positions from the center region to form lateral segment paths that have a substantially same length for all lateral segment paths in a grouping thereof; forming an additional metal layer to form spiral turns about the center region including corresponding geometry to the first metal layer; and forming a vertical cross-over configured to couple portions of segments on different metal layers to form vertical segment paths that have a substantially same length for all vertical segment paths in a grouping thereof.

Abstract: Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.

Abstract: Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: A series stacked, solenoidally wound, multipath inductor includes a plurality of turns disposed about a center region on two layers. The turns on the two layers have corresponding geometry therebetween. Each of the plurality of turns includes two or more segments that extend length-wise along the turns. The segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A cross-over architecture is configured to couple the segments of a turn on one layer with the segments on a turn on another layer to form segment paths that have a substantially same length for all segment paths in a segment path grouping between the two layers.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit and a tunable sector buffer configured to receive the clock signal and provide an output to the clock grid. The tunable sector buffer is configured to set latency and slew rate of the clock signal based on an identified resonant or non-resonant mode.

Abstract: A three-dimensional multipath inductor includes turns disposed about a center region on two layers, the turns on the two layers having corresponding geometry therebetween. Each of the turns is comprised of two or more segments that extend length-wise along the turns, and the segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A lateral cross-over is configured to couple the segments of at least one turn on one layer with the segments on a turn on a same layer to form segment paths that have a substantially same length for all segment paths in a grouping of segment paths on that same layer. A vertical cross-over is configured to couple the segments on different vertically stacked metal layers to have the segment groups with a substantially same length for all segment paths based on vertical lengths.

Abstract: A parallel stacked multipath inductor includes a first layer including turns disposed about a center region, the turns on the first layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A second layer includes turns electrically connected to the first layer along its length and disposed about the center region, the turns on the second layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position and an outermost position relative to the center region. Cross-over architectures are configured to couple the segments on the first layer with the segments on the second layer to form segment paths that have a substantially same length for all segment paths per turn between the first and second layers.

Abstract: A three-dimensional multipath inductor includes turns disposed about a center region on two layers, the turns on the two layers having corresponding geometry therebetween. Each of the turns is comprised of two or more segments that extend length-wise along the turns, and the segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A lateral cross-over is configured to couple the segments of at least one turn on one layer with the segments on a turn on a same layer to form segment paths that have a substantially same length for all segment paths in a grouping of segment paths on that same layer. A vertical cross-over is configured to couple the segments on different vertically stacked metal layers to have the segment groups with a substantially same length for all segment paths based on vertical lengths.

Abstract: A three-dimensional multipath inductor includes turns disposed about a center region on two layers, the turns on the two layers having corresponding geometry therebetween. Each of the turns is comprised of two or more segments that extend length-wise along the turns, and the segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A lateral cross-over is configured to couple the segments of at least one turn on one layer with the segments on a turn on a same layer to form segment paths that have a substantially same length for all segment paths in a grouping of segment paths on that same layer. A vertical cross-over is configured to couple the segments on different vertically stacked metal layers to have the segment groups with a substantially same length for all segment paths based on vertical lengths.

Abstract: A semiconductor inductor structure may include a first spiral structure, located on a first metal layer, having a first outer-spiral electrically conductive track and a first inner-spiral electrically conductive track separated from the first outer-spiral electrically conductive track by a first dielectric material. A second spiral structure, located on a second metal layer, having a second outer-spiral electrically conductive track and a second inner-spiral electrically conductive track separated from the second outer-spiral electrically conductive track by a second dielectric material may also be provided. The first outer-spiral electrically conductive track may be electrically coupled to the second outer-spiral electrically conductive track and the first inner-spiral electrically conductive track may be electrically coupled to the second inner-spiral electrically conductive track.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track includes first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including a plurality of adjacent turns of one or more radii within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track included first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including third turns of a third radius within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.

Abstract: A series stacked, solenoidally wound, multipath inductor includes a plurality of turns disposed about a center region on two layers. The turns on the two layers have corresponding geometry therebetween. Each of the plurality of turns includes two or more segments that extend length-wise along the turns. The segments have positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A cross-over architecture is configured to couple the segments of a turn on one layer with the segments on a turn on another layer to form segment paths that have a substantially same length for all segment paths in a segment path grouping between the two layers.

Abstract: A parallel stacked multipath inductor includes a first layer including turns disposed about a center region, the turns on the first layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position relative to the center region and an outermost position relative to the center region. A second layer includes turns electrically connected to the first layer along its length and disposed about the center region, the turns on the second layer having segments that extend length-wise along the turns, the segments having positions that vary from an innermost position and an outermost position relative to the center region. Cross-over architectures are configured to couple the segments on the first layer with the segments on the second layer to form segment paths that have a substantially same length for all segment paths per turn between the first and second layers.

Abstract: An integrated circuit transformer structure includes at least two conductor groups stacked in parallel in different layers. A first spiral track is formed in the at least two conductor groups, the first spiral track includes first turns of a first radius within each of the at least two conductor groups, and second turns of a second radius within each of the at least two conductor groups, the first and second turns being electrically connected. A second spiral track is formed in the at least two conductor groups, the second spiral track including a plurality of adjacent turns of one or more radii within each of the at least two conductor groups and disposed in a same plane between the first and second turns in each of the at least two conductor groups.