Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit and a tunable sector buffer configured to receive the clock signal and provide an output to the clock grid. The tunable sector buffer is configured to set latency and slew rate of the clock signal based on an identified resonant or non-resonant mode.

Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit, a tunable sector buffer configured to receive the clock signal and provide an output to the clock grid, at least one inductor, at least one tunable resistance switch, and a capacitor network. The tunable sector buffer is programmable to set latency and slew rate of the clock signal. The inductor, tunable resistance switch, and capacitor network are connected between the clock grid and a reference voltage. The at least one tunable resistance switch is programmable to dynamically switch the at least one inductor in or out of the clock distribution to effect at least one resonant mode of operation or a non-resonant mode of operation based on a frequency of the clock signal.

Abstract: Disclosed is an inductor structure. The inductor structure includes a base material, at least one bottom spiral conductor disposed on the base material, a middle spiral conductor disposed on the bottom spiral conductor, a top spiral conductor disposed on the middle spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. The at least one bottom spiral conductor is connected electrically in parallel to the middle spiral conductor and the middle spiral conductor is connected electrically in series to the top spiral conductor. The top spiral conductor is thicker, narrower and less tightly wound than the middle spiral conductor and the bottom spiral conductor.

Abstract: Light-source treatment devices such as dermatological or cosmetic devices include a skin contacting surface layer that is antimicrobial. The antimicrobial skin contacting surface layer enhances the cleanliness of the device and helps reduce infection and contamination risks associated with use of the devices, particularly where the treatment of multiple individuals occurs. The antimicrobial layer may be titanium dioxide.

Abstract: A semiconductor inductor structure may include a first spiral structure, located on a first metal layer, having a first outer-spiral electrically conductive track and a first inner-spiral electrically conductive track separated from the first outer-spiral electrically conductive track by a first dielectric material. A second spiral structure, located on a second metal layer, having a second outer-spiral electrically conductive track and a second inner-spiral electrically conductive track separated from the second outer-spiral electrically conductive track by a second dielectric material may also be provided. The first outer-spiral electrically conductive track may be electrically coupled to the second outer-spiral electrically conductive track and the first inner-spiral electrically conductive track may be electrically coupled to the second inner-spiral electrically conductive track.

Abstract: A wide bandwidth resonant clock distribution comprises a clock grid configured to distribute a clock signal to a plurality of components of an integrated circuit, at least one inductor, at least one tunable resistance switch, and a capacitor network. The inductor, tunable resistance switch, and capacitor network are connected between the clock grid and a reference voltage. The at least one tunable resistance switch is programmable to dynamically switch the at least one inductor in or out of the clock distribution to effect at least one resonant mode of operation or a non-resonant mode of operation based on a frequency of the clock signal.

Abstract: Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.

Abstract: Systems and methods are provided for capturing mutual coupling effects between an integrated circuit chip and chip package using electronic design automation (EDA) tools. Specifically, a method is provided that is implemented in a computer infrastructure for designing an integrated circuit chip. The method includes compiling process technology parameters that describe electrical behavior for a chip-package coupling and a package of the integrated circuit chip. The method also includes generating a parasitic technology file to include the compiled process technology parameters.

Abstract: Systems and methods are provided for capturing mutual coupling effects between an integrated circuit chip and chip package using electronic design automation (EDA) tools. Specifically, a method is provided that is implemented in a computer infrastructure for designing an integrated circuit chip. The method includes compiling process technology parameters that describe electrical behavior for a chip-package coupling and a package of the integrated circuit chip. The method also includes generating a parasitic technology file to include the compiled process technology parameters.

Abstract: Light-source treatment devices such as dermatological or cosmetic devices include a skin contacting surface layer that is antimicrobial. The antimicrobial skin contacting surface layer enhances the cleanliness of the device and helps reduce infection and contamination risks associated with use of the devices, particularly where the treatment of multiple individuals occurs. The antimicrobial layer may be titanium dioxide.

Abstract: Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.

Abstract: A self-contained, hand-held device for providing radiation-based dermatological treatments includes a device body configured to be handheld by a user; a laser device supported in the device body, the laser device including a laser beam source configured to emit laser radiation; an application end configured to be manually moved across the surface of the skin during a treatment session; and electronics configured to control the laser beam source to emit laser radiation toward the skin to provide a dermatological treatment; wherein the device includes no optics downstream of the laser source.

Abstract: A self-contained, hand-held device for providing fractional treatment to the skin includes a device body configured to be handheld by a user; a radiation source supported in the device body, the radiation source including a single beam source configured to emit a single energy beam; an application end configured to be manually moved across the skin during a treatment session; and electronics configured to pulse the single beam source to emit a sequence of pulsed energy beams to the skin while the application end is manually moved across the skin, thereby generating an array of treatment spots on the skin, wherein adjacent treatment spots generated on the skin are spaced apart from each other by areas of non-treated skin between the adjacent treatment spots, thereby providing a fractional treatment. Each pulsed energy beam emitted by the beam source has the same, fixed propagation path with respect to the device body.

Abstract: A self-contained, hand-held device for delivering fractional radiation-based treatment to the skin includes a device body configured to be handheld by a user; a radiation source supported in the device body, the radiation source including a beam source configured to generate an energy beam; an application end configured to be manually moved across the surface of the skin during a treatment session; and electronics configured to control the radiation source during the treatment session such that the beam source emits a sequence of pulsed energy beams to the skin to generate an array of treatment spots on the skin, wherein adjacent treatment spots generated on the skin are spaced apart from each other by areas of non-treated skin between the adjacent treatment spots. Each energy beam emitted by the pulsed beam source has the same, fixed propagation path with respect to the device body.

Abstract: Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.

Abstract: Disclosed is an inductor structure. The inductor structure includes a base material, at least one bottom spiral conductor disposed on the base material, a middle spiral conductor disposed on the bottom spiral conductor, a top spiral conductor disposed on the middle spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. The at least one bottom spiral conductor is connected electrically in parallel to the middle spiral conductor and the middle spiral conductor is connected electrically in series to the top spiral conductor. The top spiral conductor is thicker, narrower and less tightly wound than the middle spiral conductor and the bottom spiral conductor.

Abstract: Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.

Abstract: Structures with high-Q value inductors, design structure for high-Q value inductors and methods of fabricating such structures is disclosed herein. A method in a computer-aided design system for generating a functional design model of an inductor is also provided. The method includes: generating a functional representation of a plurality of vertical openings simultaneously formed in a substrate, wherein a first of the plurality of vertical openings is used as through silicon vias and is etched deeper than a second of the plurality of vertical openings used for high-Q inductors; generating a functional representation of a dielectric layer formed in the plurality of vertical openings; and generating a functional representation of a metal layer deposited on the dielectric layer in the plurality of vertical.

Abstract: A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation in a substrate, the substrate having a frontside and an opposing backside; forming a first dielectric layer on the frontside of the substrate; forming a trench in the first dielectric layer, the trench aligned over and within a perimeter of the dielectric isolation and extending to the dielectric isolation; extending the trench formed in the first dielectric layer through the dielectric isolation and into the substrate to a depth less than a thickness of the substrate; filling the trench and co-planarizing a top surface of the trench with a top surface of the first dielectric layer to form an electrically conductive through via; and thinning the substrate from a backside of the substrate to expose the through via.

Abstract: Design structure embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes active circuitry on a substrate, a bond pad carried by the substrate, and a shielding structure disposed between the substrate and the bond pad. The shielding structure includes a plurality of electrically characterized devices configured to reduce noise transmission from the active circuitry to the bond pad.