Abstract: A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

Abstract: The present invention relates generally to a new metal/magnetic-ceramic laminate with through-holes and process thereof. More particularly, the invention encompasses a new process for fabrication of a large area ceramic laminate magnet with a significant number of holes, integrated metal plate(s) and co-sintered electrodes for electron and electron beam control. The present invention also relates to a magnetic matrix display (MMD), and electron beam source, and methods of manufacture thereof.

Abstract: A process wherein a low viscosity, metal-containing paste is screened onto a ceramic greensheet and then sets up to increase its viscosity. In one method, the low viscosity is caused by excess solvent which is then blotted or otherwise removed so that the viscosity of the paste is increased. In an alternative method, the low viscosity paste contains a cross-linking agent which causes the paste to increase its viscosity after screening.

Abstract: The capacitor on a ceramic substrate one by unique film metallization including in one embodiment an in situ oxidation of titanium to create a metal oxide capacitor. The combination of metals when used with the appropriate optimized oxidation conditions and parameters ensures a high yielding capacitor with high capacitance in absence of noble metals and with ease of manufacture providing a low cost, high yield capacitor on ceramic.

Abstract: The present invention relates generally to new planar substrates that are metallized and embedded with material to minimize the camber and method thereof. The invention also relates to the fabrication of multilayer ceramic (MLC) substrates for packaging electronic devices. More particularly, this invention relates to the fabrication of thin and small ceramic substrates which do not need post-sintering processing to control the flatness of the sintered product.

Abstract: A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

Abstract: The present invention discloses at least one source metal that is embedded in at least one inert material to form a stand-alone structure and process thereof. It is preferred that the source metal is nickel or alloy thereof, and the inert material is at least one ceramic.

Abstract: In the formation of multilayer ceramic substrates, greensheets are utilized which have the same pattern and number of vias punched in each greensheet. Then, selected vias may be filled with metallic paste to form the internal connections of the multilayer ceramic substrate. The remaining vias may be filled with a fugitive material or left totally unfilled. Also disclosed is the multilayer ceramic substrate produced by this method.

Abstract: An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 mm thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer is comprised of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 mm for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

Abstract: An inventive method for forming a thin film comprises the steps of preparing a sputter-target of a material which is fully oxidized and crystallized to a perovskite structure, sputter-depositing a thin film on top of a sample with the target in an inert gas atmosphere, and annealing the thin film in non-oxygen ambient. With the use of such a target, it is possible to reduce the negative ion effect during the sputter deposition and to eliminate the presence of oxygen during the annealing process.

Abstract: A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

Abstract: A multilayer ceramic substrate having a thin film structure containing capacitor connected thereto is provided as an interposer capacitor, the capacitor employing platinum as the bottom electrode of the capacitor. In a preferred capacitor, a dielectric material such as barium titanate is used as the dielectric material between the capacitor electrodes. The fabrication of the interposer capacitor requires an in-situ or post deposition high temperature anneal and the use of such dielectrics requires heating of the capacitor structure in a non-reducing atmosphere. A layer of a high temperature, thin film diffusion barrier such as TaSiN on the lower platinum electrode between the electrode and underlying multilayer ceramic substrate prevents or minimizes oxidization of the metallization of the multilayer ceramic substrate to which the thin film structure is connected during the fabrication process.

Abstract: The dielectric constant of low loss tangent glass-ceramic compositions, such as cordierite-based glass ceramics, is modified over a range by selective addition of high dielectric constant ceramics, such as titanates, tantalates and carbides and metals, such as copper. The low loss tangent is retained or improved over a range of frequencies, and the low CTE of the glass-ceramic is maintained. BaTiO3, SrTiO3 and Ta2O5 produce the most effective results.

Abstract: Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.

Abstract: A multi-layer ceramic capacitor and method of manufacturing the capacitor, the capacitor having signal vias surrounded by an area containing a material having a low dielectric constant, the via and surrounding area of low dielectric constant material inserted in a material having a high dielectric constant.

Abstract: An electronic component structure is proposed, wherein an interposer thin film capacitor structure is employed between an active electronic component and a multilayer circuit card. A method for making the interposer thin film capacitor is also proposed. In order to eliminate fatal electrical shorts in the overlying thin film regions that arise from pits, voids, or undulations on the substrate surface, a thick first metal layer, on the order of 0.5-10 .mu.m thick, is deposited on the substrate upon which the remaining thin films, including a dielectric film and second metal layer, are then applied. The first metal layer includes of Pt or other electrode metal, or a combination of Pt, Cr, and Cu metals, and a diffusion barrier layer. Additional Ti layers may be employed for adhesion enhancement. The thickness of the first metal layers are approximately: 200 A for the Cr layer; 0.5-10 .mu.m for the Cu layer; 1000 A-5000 A for the diffusion barrier; and 100 A-2500 A for a Pt layer.

Abstract: Greensheets having enhanced flexibility and strength are prepared from a greensheet casting composition comprising alumina or other ceramic having a mean particle size of less than about 1 micron and being substantially unimodal, a binder resin, a solvent system and a plasticizer. The greensheets may be formed having a thickness of about 50 microns using conventional greensheet fabricating devices. The greensheets are particularly suitable as dielectric layers for internal layer capacitors in a multilayer ceramic substrate. A preferred co-sintering heating profile to avoid blistering of the MLC package is also provided to form the capacitor containing MLC.

Abstract: A sealed composite ceramic structure is formed by first forming a plurality of composite green sheets. Each of the green sheets is a composite structure comprising a central portion of partially densifiable material and an outer portion of fully densifiable material. Next, top and bottom green sheets of fully densifiable material are formed. The greensheets are then stacked to form a laminated structure in the following order: the bottom green sheet, the plurality of composite green sheets, and the top green sheet. The substrate laminate is sintered to form the sealed structure having a porous central portion. The composite structure has particular application to ceramic substrates for mounting semiconductor devices requiring low dielectric constant substrates, but the structure also has applications in fluid processing using porous laminated structures. In both applications, the creation of a porous ceramic body with solid, sealed edges and/or external surfaces hold significant advantages.

Abstract: Improved vie-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multi-layer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.

Abstract: Improved via-filling compositions for producing conductive vias in circuitized ceramic substrates, particularly multilayer substrates, without cracking and/or loss of hermetic sealing. The via-filling compositions comprise pastes containing a mixture of (a) ceramic and/or glass spheres of substantially- uniform diameter between about 0.5 and 6 .mu.m, (b) conductive metal particles or spheres having a maximum dimension or diameter between about 1/3 and 1/4 of the diameter of the ceramic and/or glass spheres, and (c) a binder vehicle. The formed conductive via bodies comprise a uniform conductive skeletal network of sintered metal particles densely packed within a uniform matrix of the co-sintered ceramic and/or glass spheres, which matrix is hermetically fused and integrated with ceramic layers forming the wall of the via in the ceramic circuit substrate.